Inventor · disambiguated record
Byung-Lyul Park
Also filed as: PARK BYUNG-LYUL
104 granted patents·21 pending applications·1,422 citations·filing 1996–2021
99Inventor score
Top patents by PatentIndex Score
125 records- 0198US9461007B2Wafer-to-wafer bonding structureSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 4, 2016·239 cites·20 claims
- 0298US8354308B2Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrateSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 15, 2013·230 cites·13 claims
- 0396US10165349B2Audio output device and electronic device connected therewithSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 25, 2018·9 cites·10 claims
- 0496US9865581B2Method of fabricating multi-substrate semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 9, 2018·25 cites·20 claims
- 0596US9520361B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 13, 2016·28 cites·20 claims
- 0696US8076234B1Semiconductor device and method of fabricating the same including a conductive structure is formed through at least one dielectric layer after forming a via structurePARK BYUNG-LYUL·Filed 2010·Granted Dec 13, 2011·40 cites·19 claims
- 0795US10325882B2Method of manufacturing semiconductor packageSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 18, 2019·38 cites·19 claims
- 0895US8957526B2Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packagesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 17, 2015·19 cites·8 claims
- 0994US9935037B2Multi-stacked device having TSV structureSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 3, 2018·13 cites·20 claims
- 1094US9859191B2Semiconductor device including conductive via with buffer layer at tapered portion of conductive viaLEE HO-JIN·Filed 2016·Granted Jan 2, 2018·12 cites·11 claims
- 1194US9691684B2Integrated circuit device including through-silicon via structure and decoupling capacitor and method of manufacturing the samePARK JAE-HWA·Filed 2014·Granted Jun 27, 2017·21 cites·20 claims
- 1294US8390120B2Semiconductor device and method of fabricating the sameMOON KWANG-JIN·Filed 2010·Granted Mar 5, 2013·29 cites·29 claims
- 1393US9530706B2Semiconductor devices having hybrid stacking structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 27, 2016·13 cites·17 claims
- 1493US9379042B2Integrated circuit devices having through silicon via structures and methods of manufacturing the samePARK JAE-HWA·Filed 2014·Granted Jun 28, 2016·15 cites·19 claims
- 1593US8592310B2Methods of manufacturing a semiconductor devicePARK BYUNG-LYUL·Filed 2011·Granted Nov 26, 2013·18 cites·20 claims
- 1692US11710715B2Semiconductor packageSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 25, 2023·2 cites·20 claims
- 1792US8952543B2Via connection structures, semiconductor devices having the same, and methods of fabricating the structures and devicesLEE HO-JIN·Filed 2012·Granted Feb 10, 2015·15 cites·25 claims
- 1892US8884440B2Integrated circuit device including through-silicon via structure having offset interfaceKIM SU-KYOUNG·Filed 2012·Granted Nov 11, 2014·19 cites·19 claims
- 1991US9728490B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 8, 2017·9 cites·16 claims
- 2091US8963336B2Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the sameJUNG DEOK-YOUNG·Filed 2014·Granted Feb 24, 2015·12 cites·20 claims
- 2191US7737038B2Method of fabricating semiconductor device including planarizing conductive layer using parameters of pattern density and depth of trenchesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 15, 2010·48 cites·19 claims
- 2290US9824973B2Integrated circuit devices having through-silicon via structures and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 21, 2017·7 cites·25 claims
- 2390US9337125B2Integrated circuit devices including a via structure and methods of fabricating integrated circuit devices including a via structureSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 10, 2016·10 cites·18 claims
- 2490US9142490B2Integrated circuit device having through-silicon-via structure and method of manufacturing the integrated circuit devicePARK JAE-HWA·Filed 2014·Granted Sep 22, 2015·11 cites·20 claims
- 2590US9070748B2Semiconductor devices having through-vias and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 30, 2015·10 cites·14 claims
- 2689US9653430B2Semiconductor devices having stacked structures and methods for fabricating the sameKIM TAEYEONG·Filed 2015·Granted May 16, 2017·14 cites·20 claims
- 2788US9852965B2Semiconductor devices with through electrodes and methods of fabricating the sameLEE HO-JIN·Filed 2016·Granted Dec 26, 2017·6 cites·20 claims
- 2888US8927426B2Semiconductor devices having through-vias and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 6, 2015·10 cites·14 claims
- 2987US10325897B2Method for fabricating substrate structure and substrate structure fabricated by using the methodSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 18, 2019·4 cites·20 claims
- 3087US9018768B2Integrated circuit having through silicon via structure with minimized deteriorationPARK BYUNG-LYUL·Filed 2012·Granted Apr 28, 2015·10 cites·7 claims
- 3187US8941216B2Semiconductor devices having through-vias and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 27, 2015·7 cites·7 claims
- 3287US6087257AMethods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jul 11, 2000·99 cites·24 claims
- 3387US5723384AMethod for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin filmSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Mar 3, 1998·91 cites·18 claims
- 3486US9691685B2Semiconductor devices and methods of manufacturing the same, and semiconductor packages including the semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 27, 2017·4 cites·20 claims
- 3586US9653623B2Methods of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 16, 2017·6 cites·20 claims
- 3686US9064941B2Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the sameJUNG DEOK-YOUNG·Filed 2015·Granted Jun 23, 2015·5 cites·11 claims
- 3786US8546256B2Method of forming semiconductor deviceJUNG DEOK-YOUNG·Filed 2011·Granted Oct 1, 2013·7 cites·20 claims
- 3885US10103098B2Semiconductor devices including a through via structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 16, 2018·5 cites·19 claims
- 3985US9076849B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 7, 2015·6 cites·12 claims
- 4085US8696921B2Method of manufacturing a semiconductor devicePARK JIN-HO·Filed 2010·Granted Apr 15, 2014·8 cites·11 claims
- 4184US8873901B2Buried-type optical input/output devices and methods of manufacturing the sameKANG PIL-KYU·Filed 2012·Granted Oct 28, 2014·6 cites·20 claims
- 4284US8836142B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 16, 2014·7 cites·16 claims
- 4384US8786058B2Semiconductor devices and methods of manufacturing the sameHAN KYU-HEE·Filed 2011·Granted Jul 22, 2014·8 cites·14 claims
- 4483US9236349B2Semiconductor device including through via structures and redistribution structuresSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 12, 2016·6 cites·20 claims
- 4583US9171753B2Semiconductor devices having conductive via structures and methods for fabricating the sameLEE HO-JIN·Filed 2013·Granted Oct 27, 2015·7 cites·19 claims
- 4683US8278207B2Methods of manufacturing semiconductor devicesPARK JIN-HO·Filed 2010·Granted Oct 2, 2012·6 cites·8 claims
- 4782US9153559B2Semiconductor devices including through silicon via electrodes and methods of fabricating the sameLEE DOSUN·Filed 2012·Granted Oct 6, 2015·8 cites·19 claims
- 4881US9103974B2Semiconductor devices having optical transceiverKANG PIL-KYU·Filed 2012·Granted Aug 11, 2015·5 cites·13 claims
- 4980US9543250B2Semiconductor devices including through-silicon viaSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 10, 2017·3 cites·5 claims
- 5080US8860221B2Electrode connecting structures containing copperSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Oct 14, 2014·5 cites·20 claims
Showing the top 50 of 125 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Byung-Lyul Park files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →