Inventor · disambiguated record
Cateno Marco Camalleri
Also filed as: CAMALLERI CATENO M · CAMALLERI CATENO MARCO
10 granted patents·15 pending applications·19 citations·filing 1996–2025
84Inventor score
Files withST MICROELECTRONICS SRL13ST MICROELECTRONICS INT NV8LORENTI SIMONA2CONS RIC MICROELETTRONICA1SALINAS DARIO1
Top patents by PatentIndex Score
25 records- 0172US9099322B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceLORENTI SIMONA·Filed 2012·Granted Aug 4, 2015·2 cites·10 claims
- 0266US7842574B2Method of manufacturing a semiconductor power deviceST MICROELECTRONICS SRL·Filed 2008·Granted Nov 30, 2010·5 cites·19 claims
- 0362US8304311B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceLORENTI SIMONA·Filed 2006·Granted Nov 6, 2012·1 cites·34 claims
- 0462US2025043460A1Manufacturing process for silicon carbide power devices with variable dopant concentrationST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0560US2010154876A1Modular interdigitated back contact photovoltaic cell structure on opaque substrate and fabrication processST MICROELECTRONICS SRL·Filed 2009·Application pending·0 cites
- 0658US9911810B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceST MICROELECTRONICS SRL·Filed 2017·Granted Mar 6, 2018·0 cites·15 claims
- 0758US2024297249A1Electronic device with auto aligned csl and edge termination structure, and manufacturing method thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0858US2025234587A1Self-aligned trench bottom protective region for a trench-gate metal-oxide-semiconductor field-effect transistorST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0958US2024258377A1Silicon carbide power mosfet device having improved performances and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1057US2024258422A1Power mosfet device with protection against the contaminants and related manufacturing processST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1157US2024297044A1Process for manufacturing localized ion implants in silicon-carbide power electronic devicesST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1255US9607859B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceST MICROELECTRONICS SRL·Filed 2015·Granted Mar 28, 2017·0 cites·18 claims
- 1355US2024113179A1Sic-based electronic device with improved body-source coupling, and manufacturing methodST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1455US2024071912A1Sic-based electronic device with fuse element for short-circuits protection, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1554US2024014286A1Power mosfet device with isolated gate structure and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1653US2024079237A1Method of manufacturing ohmic contacts of an electronic device, with thermal budget optimizationST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1753US2025294801A1Power mosfet provided with a variable transparency edge ring formed by a high-depth auto-aligned implantST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 1853US2024297043A1Process for manufacturing a power electronic device having a current spreading layerST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1951US2016111582A1Modular interdigitated back contact photovoltaic cell structure on opaque substrate and fabrication processST MICROELECTRONICS SRL·Filed 2015·Application pending·0 cites
- 2050US12249634B2Vertical-conduction silicon carbide MOSFET device having improved gate biasing structure and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 2149US8283702B2Process for manufacturing a large-scale integration MOS device and corresponding MOS deviceSALINAS DARIO·Filed 2010·Granted Oct 9, 2012·1 cites·22 claims
- 2243US6642121B2Control of amount and uniformity of oxidation at the interface of an emitter region of a monocrystalline silicon wafer and a polysilicon layer formed by chemical vapor depositionST MICROELECTRONICS SRL·Filed 2001·Granted Nov 4, 2003·3 cites·18 claims
- 2342US8030192B2Process for manufacturing a large-scale integration MOS device and corresponding MOS deviceST MICROELECTRONICS SRL·Filed 2006·Granted Oct 4, 2011·0 cites·25 claims
- 2437US2007063272A1Semiconductor power device with insulated gate formed in a trench, and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2006·Application pending·0 cites
- 2535US6090669AFabrication method for high voltage devices with at least one deep edge ringCONS RIC MICROELETTRONICA·Filed 1996·Granted Jul 18, 2000·7 cites·37 claims
Join the waitlist — get patent alerts
Get an alert when Cateno Marco Camalleri files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →