Inventor · disambiguated record
Carsten Grass
Also filed as: GRASS CARSTEN · GRASS CARSTEN BERND
12 granted patents·5 pending applications·62 citations·filing 2012–2024
87Inventor score
Top patents by PatentIndex Score
17 records- 0197US9583640B1Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structureGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 28, 2017·30 cites·20 claims
- 0296US9608110B2Methods of forming a semiconductor circuit element and semiconductor circuit elementGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 28, 2017·16 cites·19 claims
- 0385US9514942B1Method of forming a gate mask for fabricating a structure of gate linesGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 6, 2016·5 cites·20 claims
- 0476US9337045B2Methods of forming a semiconductor circuit element and semiconductor circuit elementGLOBALFOUNDRIES INC·Filed 2014·Granted May 10, 2016·4 cites·18 claims
- 0572US8872285B2Metal gate structure for semiconductor devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 28, 2014·3 cites·2 claims
- 0664US8951877B2Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatmentGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 10, 2015·1 cites·14 claims
- 0763US9123825B2Methods for fabricating FinFET integrated circuits using laser interference lithography techniquesGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 1, 2015·1 cites·20 claims
- 0859US2025234585A1Extended drain metal oxide semiconductor (edmos) field effect transistor (fet) with dual thickness semiconductor materialGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 0959US2025294837A1Structures including an isotopically-depleted semiconductor layerGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1055US10079300B2Semiconductor circuit elementGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 18, 2018·0 cites·19 claims
- 1154US8993459B2Method of forming a material layer in a semiconductor structureGRASS CARSTEN·Filed 2012·Granted Mar 31, 2015·1 cites·17 claims
- 1251US8735240B2CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removalKELWING TORBEN·Filed 2012·Granted May 27, 2014·1 cites·17 claims
- 1345US9123827B2Methods for fabricating integrated circuits with fully silicided gate electrode structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 1, 2015·0 cites·20 claims
- 1442US9508588B2Methods for fabricating integrated circuits with isolation regions having uniform step heightsGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 29, 2016·0 cites·20 claims
- 1541US2014264626A1Method for forming a gate electrode of a semiconductor device, gate electrode structure for a semiconductor device and according semiconductor device structureGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 1639US2013280873A1Enhanced device reliability of a semiconductor device by providing superior process conditions in high-k film growthGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 1733US2016204218A1Semiconductor structure comprising an aluminum gate electrode portion and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →