Inventor · disambiguated record
Ching-Lin Chan
Also filed as: CHAN CHING-LIN
22 granted patents·4 pending applications·54 citations·filing 2011–2017
92Inventor score
Top patents by PatentIndex Score
26 records- 0194US9190536B1Junction field effect transistorMACRONIX INT CO LTD·Filed 2014·Granted Nov 17, 2015·21 cites·20 claims
- 0292US9520492B2Semiconductor device having buried layerMACRONIX INT CO LTD·Filed 2015·Granted Dec 13, 2016·9 cites·10 claims
- 0381US9520471B1Semiconductor device having gradient implant region and manufacturing method thereofMACRONIX INT CO LTD·Filed 2015·Granted Dec 13, 2016·3 cites·20 claims
- 0481US9305993B2Method of manufacturing semiconductor structureMACRONIX INT CO LTD·Filed 2015·Granted Apr 5, 2016·3 cites·5 claims
- 0580US9035386B2Semiconductor structure and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2012·Granted May 19, 2015·4 cites·19 claims
- 0677US9627528B2Semiconductor device having gate structures and manufacturing method thereofMACRONIX INT CO LTD·Filed 2015·Granted Apr 18, 2017·3 cites·19 claims
- 0768US9184396B26H-indeno[2,1-B]quinoline derivative and organic light emitting diode using the sameNAT UNIV TSING HUA·Filed 2013·Granted Nov 10, 2015·2 cites·14 claims
- 0867US9312380B2Semiconductor device having deep implantation region and method of fabricating sameMACRONIX INT CO LTD·Filed 2014·Granted Apr 12, 2016·2 cites·17 claims
- 0966US8581339B2Structure of NPN-BJT for improving punch through between collector and emitterCHANG CHIN-WEI·Filed 2011·Granted Nov 12, 2013·4 cites·16 claims
- 1062US9059283B1Semiconductor structureMACRONIX INT CO LTD·Filed 2014·Granted Jun 16, 2015·1 cites·17 claims
- 1161US9443967B1Semiconductor device having metal layer and method of fabricating sameMACRONIX INT CO LTD·Filed 2015·Granted Sep 13, 2016·1 cites·16 claims
- 1261US9070766B1Semiconductor device and method of forming the sameMACRONIX INT CO LTD·Filed 2014·Granted Jun 30, 2015·1 cites·12 claims
- 1356US9633852B2Semiconductor structure and method for forming the sameMACRONIX INT CO LTD·Filed 2014·Granted Apr 25, 2017·0 cites·13 claims
- 1452US9000519B2Semiconductor device having varying p-top and n-grade regionsMACRONIX INT CO LTD·Filed 2012·Granted Apr 7, 2015·0 cites·14 claims
- 1551US9171763B2Methods of manufacturing a semiconductor device having varying p-top and n-grade regionsMACRONIX INT CO LTD·Filed 2015·Granted Oct 27, 2015·0 cites·20 claims
- 1651US8963277B2Semiconductor structure and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2013·Granted Feb 24, 2015·0 cites·17 claims
- 1746US8969870B2Pattern for ultra-high voltage semiconductor device manufacturing and process monitoringMACRONIX INT CO LTD·Filed 2013·Granted Mar 3, 2015·0 cites·20 claims
- 1846US8872222B2Semiconductor structure and method for forming the sameCHAN CHING-LIN·Filed 2012·Granted Oct 28, 2014·0 cites·15 claims
- 1945US10256307B2Semiconductor deviceMACRONIX INT CO LTD·Filed 2017·Granted Apr 9, 2019·0 cites·16 claims
- 2045US10121889B2High voltage semiconductor deviceMACRONIX INT CO LTD·Filed 2014·Granted Nov 6, 2018·0 cites·13 claims
- 2142US2015214361A1Semiconductor Device Having Partial Insulation Structure And Method Of Fabricating SameMACRONIX INT CO LTD·Filed 2014·Application pending·0 cites
- 2241US9761656B2Semiconductor device having buried region and method of fabricating sameMACRONIX INT CO LTD·Filed 2015·Granted Sep 12, 2017·0 cites·20 claims
- 2341US9450048B2Semiconductor device and manufacturing method and operating method for the sameMACRONIX INT CO LTD·Filed 2013·Granted Sep 20, 2016·0 cites·9 claims
- 2435US2013285136A1Schottky diode with enhanced breakdown voltageLU CHIN-HSIEN·Filed 2012·Application pending·0 cites
- 2533US2014061721A1Mos device and method for fabricating the sameCHAN CHING-LIN·Filed 2012·Application pending·0 cites
- 2632US2013265102A1Semiconductor structure and method for manufacturing the sameLIN CHEN-YUAN·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →