Inventor · disambiguated record
Chia-Ling Chan
Also filed as: CHAN CHIA-LING
25 granted patents·1 pending application·35 citations·filing 2014–2024
93Inventor score
Top patents by PatentIndex Score
26 records- 0194US9129988B1FinFET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 8, 2015·17 cites·20 claims
- 0291US10522656B2Forming epitaxial structures in fin field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·6 cites·20 claims
- 0385US10727226B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 28, 2020·3 cites·20 claims
- 0485US10134902B2PMOS FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·3 cites·20 claims
- 0583US9343575B1FinFET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 17, 2016·3 cites·19 claims
- 0676US12513948B2Forming epitaxial structures in fin field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 0776US12317524B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 0875US10665697B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·1 cites·20 claims
- 0974US12125908B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 22, 2024·0 cites·20 claims
- 1074US10784377B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·1 cites·20 claims
- 1173US10879399B2Method of manufacturing semiconductor device comprising doped gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·1 cites·20 claims
- 1269US11677028B2PMOS FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·20 claims
- 1369US11610885B2Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 21, 2023·0 cites·20 claims
- 1469US11456373B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·0 cites·20 claims
- 1569US11342454B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 1666US11264505B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·0 cites·20 claims
- 1764US11495674B2Forming epitaxial structures in fin field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 8, 2022·0 cites·20 claims
- 1861US10714619B2PMOS FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·0 cites·20 claims
- 1960US2025323013A1Detection of Space Charge Effect During Ion ImplantationAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2059US10861935B2Semiconductor device source/drain region with arsenic-containing barrier regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 2157US10700197B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 30, 2020·0 cites·20 claims
- 2256US10374038B2Semiconductor device source/drain region with arsenic-containing barrier regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 6, 2019·0 cites·20 claims
- 2350US11018259B2Semiconductor device comprising gate structure and doped gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 25, 2021·0 cites·20 claims
- 2447US10629494B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 21, 2020·0 cites·20 claims
- 2547US10326003B2FinFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 18, 2019·0 cites·20 claims
- 2642US10566242B2Minimization of plasma doping induced fin height lossTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 18, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →