Inventor · disambiguated record
Chih-Sheng Chang
Also filed as: CHANG CHIH-SHENG
192 granted patents·28 pending applications·3,013 citations·filing 1998–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD96UNITED MICROELECTRONICS CORP35TAIWAN SEMICONDUCTOR MFG21SEA SONIC ELECTRONICS CO LTD10HIMAX TECH LTD9
Top patents by PatentIndex Score
220 records- 0198US11380708B2Analog non-volatile memory device using poly ferroelectric film with random polarization directionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·7 cites·20 claims
- 0298US11145676B1Memory device and multi-level memory cell having ferroelectric storage element and magneto-resistive storage elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·8 cites·18 claims
- 0398US9245805B2Germanium FinFETs with metal gates and stressorsYEH CHIH CHIEH·Filed 2010·Granted Jan 26, 2016·536 cites·19 claims
- 0498US8816444B2System and methods for converting planar design to FinFET designWANN CLEMENT HSINGJEN·Filed 2012·Granted Aug 26, 2014·1.3k cites·20 claims
- 0598US8264032B2Accumulation type FinFET, circuits and fabrication method thereofYEH CHIH CHIEH·Filed 2010·Granted Sep 11, 2012·73 cites·20 claims
- 0697US10276697B1Negative capacitance FET with improved reliability performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·19 cites·20 claims
- 0797US9716146B2Integrated circuit structure and method with solid phase diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 25, 2017·12 cites·20 claims
- 0897US9209185B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 8, 2015·23 cites·20 claims
- 0997US8796759B2Fin-like field effect transistor (FinFET) device and method of manufacturing samePERNG TSU-HSIU·Filed 2010·Granted Aug 5, 2014·235 cites·19 claims
- 1097US7701038B2High-gain vertex lateral bipolar junction transistorTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 20, 2010·81 cites·20 claims
- 1196US11856784B2Analog non-volatile memory device using poly ferroelectric film with random polarization directionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 1296US10164016B2Integrated circuit structure and method with solid phase diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·9 cites·19 claims
- 1396US10049938B2Semiconductor devices, FinFET devices, and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 14, 2018·11 cites·20 claims
- 1496US9553025B2Selective Fin-shaping processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·14 cites·20 claims
- 1596US9178067B1Structure and method for FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 3, 2015·17 cites·17 claims
- 1695US9437683B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 6, 2016·8 cites·20 claims
- 1795US9368594B2Method of forming a fin-like BJTTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·11 cites·20 claims
- 1895US8946829B2Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applicationsWANN CLEMENT HSINGJEN·Filed 2011·Granted Feb 3, 2015·17 cites·12 claims
- 1995US8875076B2System and methods for converting planar design to FinFET designTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 28, 2014·35 cites·20 claims
- 2095US8486769B2Method for forming metrology structures from fins in integrated circuitryWANG CHIEN-HSUN·Filed 2010·Granted Jul 16, 2013·23 cites·20 claims
- 2194US10204826B1Method for removing damaged layer embedded in a dielectric layerUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 12, 2019·20 cites·15 claims
- 2294US8881066B2Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) deviceSHIEH MING-FENG·Filed 2011·Granted Nov 4, 2014·21 cites·20 claims
- 2394US8525267B2Device and method for forming Fins in integrated circuitryWANG CHIEN-HSUN·Filed 2010·Granted Sep 3, 2013·22 cites·17 claims
- 2493US12154852B2Interconnection structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Nov 26, 2024·2 cites·9 claims
- 2593US10937783B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 2, 2021·6 cites·20 claims
- 2693US9721955B2Structure and method for SRAM FinFET device having an oxide featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 1, 2017·9 cites·21 claims
- 2793US9646994B2Semiconductor devices and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 9, 2017·8 cites·20 claims
- 2893US8759184B2FinFETs and the methods for forming the sameHO CHIA-CHENG·Filed 2012·Granted Jun 24, 2014·17 cites·20 claims
- 2993US8609499B2FinFETs and the methods for forming the sameHO CHIA-CHENG·Filed 2012·Granted Dec 17, 2013·18 cites·8 claims
- 3092US10438843B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 8, 2019·12 cites·20 claims
- 3192US10163905B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 3292US8621398B2Automatic layout conversion for FinFET deviceSHEN JENG-JUNG·Filed 2010·Granted Dec 31, 2013·24 cites·20 claims
- 3392US7746130B2Triangular wave generating circuit having synchronization with external clockELITE SEMICONDUCTOR ESMT·Filed 2008·Granted Jun 29, 2010·21 cites·19 claims
- 3491US9761586B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·4 cites·19 claims
- 3591US9741829B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 22, 2017·5 cites·19 claims
- 3691US9698058B2Structure and method for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 4, 2017·5 cites·20 claims
- 3791US9035426B2Fin-like BJTCHANG CHIH-SHENG·Filed 2011·Granted May 19, 2015·11 cites·20 claims
- 3891US8896055B2Accumulation type FinFET, circuits and fabrication method thereofYEH CHIH CHIEH·Filed 2012·Granted Nov 25, 2014·11 cites·20 claims
- 3991US8806397B2Method and device for increasing fin device density for unaligned finsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 12, 2014·5 cites·20 claims
- 4091US8633076B2Method for adjusting fin width in integrated circuitryWANG CHIEN-HSUN·Filed 2010·Granted Jan 21, 2014·14 cites·20 claims
- 4191US8106468B2Process for fabricating silicon-on-nothing MOSFETsWANG TA-WEI·Filed 2008·Granted Jan 31, 2012·23 cites·20 claims
- 4290US9698060B2Germanium FinFETs with metal gates and stressorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 4, 2017·5 cites·20 claims
- 4390US8963257B2Fin field effect transistors and methods for fabricating the sameWANN CLEMENT HSINGJEN·Filed 2011·Granted Feb 24, 2015·8 cites·20 claims
- 4489US10818562B2Semiconductor structure and testing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 27, 2020·4 cites·20 claims
- 4589US10741678B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 11, 2020·4 cites·20 claims
- 4689US10490631B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·3 cites·20 claims
- 4789US10056498B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·4 cites·20 claims
- 4889US9953975B2Methods for forming STI regions in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 24, 2018·11 cites·20 claims
- 4989US9029958B2FinFETs and the methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 12, 2015·9 cites·20 claims
- 5089US8799833B2System and methods for converting planar design to FinFET designWANN CLEMENT HSINGJEN·Filed 2012·Granted Aug 5, 2014·12 cites·19 claims
Showing the top 50 of 220 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →