Inventor · disambiguated record

Che-Cheng Chang

Also filed as: CHANG CHE-CHENG

394 granted patents·18 pending applications·1,315 citations·filing 2009–2025

99Inventor score

Technology areasH10P H10W H10D H01L G01S

Files withTAIWAN SEMICONDUCTOR MFG CO LTD393 LITE ON ELECTRONICS GUANGZHOU7 AUTOMOTIVE RES & TESTING CT4 CHANG CHE-CHENG3 TAIWAN SEMICONDUCTOR MFG2

Top patents by PatentIndex Score

412 records

0199US9331074B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 3, 2016·111 cites·20 claims
0298US11177178B2FinFETs and methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 16, 2021·4 cites·20 claims
0398US9837510B2Method for manufacturing semiconductor fin structure with extending gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·24 cites·19 claims
0498US9627379B1FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·35 cites·20 claims
0598US9553090B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·30 cites·20 claims
0698US9461044B1Fin field effect transistor, semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·44 cites·20 claims
0797US10546956B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·13 cites·20 claims
0897US9953874B2FinFETs and methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 24, 2018·18 cites·20 claims
0997US9935103B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·14 cites·20 claims
1097US9929242B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 27, 2018·22 cites·22 claims
1197US9899271B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·17 cites·20 claims
1297US9818649B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·11 cites·20 claims
1397US9577036B1FinFET isolation structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·16 cites·20 claims
1497US9559205B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·23 cites·20 claims
1597US9496363B1FinFET isolation structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 15, 2016·20 cites·20 claims
1697US9490176B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 8, 2016·20 cites·20 claims
1796US10700180B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·8 cites·20 claims
1896US10355110B2FinFET and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·11 cites·20 claims
1996US10164046B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·9 cites·20 claims
2096US10084085B2Fin field effect transistor (FinFET) device structure with stop layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 25, 2018·11 cites·17 claims
2196US9929271B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 27, 2018·10 cites·20 claims
2296US9773912B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 26, 2017·11 cites·20 claims
2396US9761483B1Semiconductor devices, FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·13 cites·20 claims
2496US9716154B2Semiconductor structure having a gas-filled gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 25, 2017·12 cites·20 claims
2596US9704751B1Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·15 cites·20 claims
2696US9704752B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·16 cites·20 claims
2796US9627316B1Field effect transistor devices having interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·18 cites·20 claims
2896US9570567B1Source and drain process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·14 cites·20 claims
2996US9559100B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 31, 2017·15 cites·20 claims
3096US9461043B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·11 cites·20 claims
3196US9450099B1Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·17 cites·20 claims
3295US10867865B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·5 cites·20 claims
3395US10164029B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·10 cites·20 claims
3495US9722079B2Fin-type field effect transistor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 1, 2017·9 cites·20 claims
3595US9685554B1Fin field effect transistor and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 20, 2017·9 cites·20 claims
3695US9659813B1Interconnection and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·14 cites·20 claims
3795US9614089B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·8 cites·20 claims
3895US9530887B1Fin-type field effect transistor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 27, 2016·15 cites·20 claims
3995US9502567B2Semiconductor fin structure with extending gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·10 cites·20 claims
4094US11605564B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 14, 2023·2 cites·20 claims
4194US10483398B2Semiconductor device with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·6 cites·20 claims
4294US10096712B2FinFET device and method of forming and monitoring quality of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 9, 2018·7 cites·20 claims
4394US9954081B2Fin field effect transistor, semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·10 cites·15 claims
4494US9887136B2Semiconductor devices, FinFET devices, and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 6, 2018·9 cites·20 claims
4594US9768170B2Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·9 cites·12 claims
4694US9728501B2Method of forming trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·7 cites·20 claims
4794US9627375B2Indented gate end of non-planar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 18, 2017·16 cites·20 claims
4893US11854883B2Interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
4993US11411001B2Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·2 cites·20 claims
5093US11328962B2Notched gate structure fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·2 cites·20 claims

Showing the top 50 of 412 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →