Inventor · disambiguated record
Chao-Hsuan Chen
Also filed as: CHEN CHAO-HSUAN
7 granted patents·5 pending applications·6 citations·filing 2016–2024
75Inventor score
Top patents by PatentIndex Score
12 records- 0189US11348800B2Ultra narrow trench patterning with dry plasma etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·2 cites·20 claims
- 0287US10811270B2Ultra narrow trench patterning using plasma etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 20, 2020·4 cites·20 claims
- 0373US12302596B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 0473US11894237B2Ultra narrow trench patterning with dry plasma etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 0564US11942532B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 0660US11165033B2Active deviceE INK HOLDINGS INC·Filed 2020·Granted Nov 2, 2021·0 cites·9 claims
- 0759US2025234594A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0858US2025285869A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0952US2024096806A1Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1051US11226400B2Proximity sensor and operation method thereofE INK HOLDINGS INC·Filed 2020·Granted Jan 18, 2022·0 cites·16 claims
- 1150US2023402544A1Fin field effect transistor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1245US2017012227A1Active device and manufacturing method thereofE INK HOLDINGS INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →