Active device and manufacturing method thereof

Abstract

An active device is disposed on a substrate and includes a gate, an organic active layer, a gate insulation layer, a plurality of crystal induced structures, a source and a drain. The gate insulation layer is disposed between the gate and the organic active layer. The crystal induced structures distribute in the organic active layer and directly contact with the substrate or the gate insulation layer. The source and the drain are disposed on two opposite sides of the organic active layer, wherein a portion of the organic active layer is exposed between the source and the drain.

What is claimed is: 
     
         1 . An active device, disposed on a substrate and comprising:
 a gate;   an organic active layer;   a gate insulation layer, disposed between the gate and the organic active layer;   a plurality of crystal induced structures, distributing in the organic active layer, wherein the crystal induced structures directly contact with the substrate or the gate insulation layer; and   a source and a drain, disposed on two opposite sides of the organic active layer.   
     
     
         2 . The active device as recited in  claim 1 , wherein the crystal induced structures separate from each other and comprise a plurality of point-shaped protrusions or a plurality of strip-shaped protrusions. 
     
     
         3 . The active device as recited in  claim 1 , wherein the crystal induced structures are arranged in array or arranged dispersedly. 
     
     
         4 . The active device as recited in  claim 1 , wherein shapes or sizes of the crystal induced structures are the same or different. 
     
     
         5 . The active device as recited in  claim 1 , wherein the crystal induced structures are a plurality of nano-metal structures separated from each other or a plurality of silver-oxide nanowires partially overlapped with each other. 
     
     
         6 . The active device as recited in  claim 1 , wherein two adjacent structures of the crystal induced structures are separated by a distance, and the distance is from 100 nanometers to 10 micrometers. 
     
     
         7 . The active device as recited in  claim 1 , further comprising:
 a plurality of self-assembled monolayers, respectively located between the crystal induced structures and the organic active layer.   
     
     
         8 . The active device as recited in  claim 7 , wherein materials of the self-assembled monolayers comprise pentafluorobenzene thiol, 2-mercaptoethanol (C2H6OS), octadecylphosphonic acid (OPA), or materials having thiol (SH) or phosphate particles. 
     
     
         9 . The active device as recited in  claim 1 , wherein the organic active layer is located between the gate and the substrate, and the source and the drain are located between the gate insulation layer and the substrate. 
     
     
         10 . The active device as recited in  claim 1 , wherein a distribution density of the crystal induced structures adjacent to the source and the drain is less than a distribution density of the crystal induced structures at a portion of the organic active layer exposed between the source and the drain. 
     
     
         11 . The active device as recited in  claim 1 , wherein a portion of the organic active layer is exposed between the source and the drain. 
     
     
         12 . A manufacturing method of an active device, comprising:
 forming a gate on a substrate;   forming a gate insulation layer on the substrate, wherein the gate insulation layer covers the gate;   forming a plurality of crystal induced structures on the gate insulation layer, wherein the crystal induced structures directly contact with the gate insulation layer;   coating the gate insulation layer with an organic semiconductor material, wherein the crystal induced structures induce the organic semiconductor material to form crystals and to define an organic active layer; and   forming a source and a drain on the organic active layer, wherein a portion of the organic active layer is exposed between the source and the drain.   
     
     
         13 . The manufacturing method of the active device as recited in  claim 12 , wherein methods of forming the crystal induced structures comprise nanoimprint method, spin coating method, slit coating method, contact coating method, ink jet coating method, or screen printing coating method. 
     
     
         14 . The manufacturing method of the active device as recited in  claim 12 , wherein the crystal induced structures induce the organic semiconductor material, so as to grow crystals of the organic semiconductor material from the crystal induced structures, and to form the organic active layer having at least a grain boundary. 
     
     
         15 . The manufacturing method of the active device as recited in  claim 12 , further comprising:
 performing an acidulation process or a plasma treatment process to oxidize the crystal induced structures before coating the gate insulation layer with the organic semiconductor material, wherein the crystal induced structures are a plurality of silver nanowires partially overlapped with each other.   
     
     
         16 . The manufacturing method of the active device as recited in  claim 12 , further comprising:
 forming a plurality of self-assembled monolayer particles on the crystal induced structures before coating the gate insulation layer with the organic semiconductor material; and   a plurality of self-assembled monolayers are formed between the crystal induced structures and the organic active layer after coating the gate insulation layer with the organic semiconductor material.   
     
     
         17 . The manufacturing method of the active device as recited in  claim 16 , wherein materials of the self-assembled monolayers comprise pentafluorobenzene thiol, 2-mercaptoethanol (C2H6OS), octadecylphosphonic acid (OPA), or materials having thiol (SH) or phosphate particles. 
     
     
         18 . A manufacturing method of an active device, comprising:
 forming a source and a drain on a substrate, wherein a portion of the substrate is exposed between the source and the drain;   forming a plurality of crystal induced structures on the source, the drain, and the portion of the substrate exposed between the source and the drain, wherein the crystal induced structures directly contact with the portion of the substrate, the source, and the drain;   coating the source, the drain, and the portion of the substrate exposed between the source and the drain with an organic semiconductor material, wherein the crystal induced structures induce the organic semiconductor material to form crystals and to define an organic active layer, and the organic active layer covers the source, the drain, and the portion of the substrate exposed between the source and the drain;   forming a gate insulation layer on the substrate, wherein the gate insulation layer covers the organic active layer, the source, and the drain; and   forming a gate on the gate insulation layer.   
     
     
         19 . The manufacturing method of the active device as recited in  claim 18 , wherein methods of forming the crystal induced structures comprise nanoimprint method, spin coating method, slit coating method, contact coating method, ink jet coating method, or screen printing coating method. 
     
     
         20 . The manufacturing method of the active device as recited in  claim 18 , wherein the crystal induced structures induce the organic semiconductor material, so as to grow crystals of the organic semiconductor material from the crystal induced structures, and to form the organic active layer having at least a grain boundary. 
     
     
         21 . The manufacturing method of the active device as recited in  claim 18 , further comprising:
 forming a plurality of self-assembled monolayer particles on the crystal induced structures before coating the source, the drain, and the portion of the substrate exposed between the source and the drain with the organic semiconductor material; and   a plurality of self-assembled monolayers are formed between the crystal induced structures and the organic active layer after coating the source, the drain, and the portion of the substrate exposed between the source and the drain with the organic semiconductor material.   
     
     
         22 . The manufacturing method of the active device as recited in  claim 18 , wherein materials of the self-assembled monolayers comprise pentafluorobenzene thiol, 2-mercaptoethanol (C2H6OS), octadecylphosphonic acid (OPA), or materials having thiol (SH) or phosphate particles.