Inventor · disambiguated record
Chieh-Fang Chen
Also filed as: CHEN CHIEH-FANG
36 granted patents·8 pending applications·242 citations·filing 2006–2025
97Inventor score
Top patents by PatentIndex Score
44 records- 0195US8138028B2Method for manufacturing a phase change memory device with pillar bottom electrodeLUNG HSIANG LAN·Filed 2007·Granted Mar 20, 2012·25 cites·27 claims
- 0294US7932507B2Current constricting phase change memory element structureIBM·Filed 2010·Granted Apr 26, 2011·14 cites·14 claims
- 0394US7879645B2Fill-in etching free pore deviceMACRONIX INT CO LTD·Filed 2008·Granted Feb 1, 2011·31 cites·12 claims
- 0492US8363463B2Phase change memory having one or more non-constant doping profilesMACRONIX INT CO LTD·Filed 2010·Granted Jan 29, 2013·16 cites·10 claims
- 0592US7701750B2Phase change device having two or more substantial amorphous regions in high resistance stateMACRONIX INT CO LTD·Filed 2008·Granted Apr 20, 2010·21 cites·26 claims
- 0690US8426242B2Composite target sputtering for forming doped phase change materialsCHENG HUAI-YU·Filed 2011·Granted Apr 23, 2013·11 cites·20 claims
- 0790US7884343B2Phase change memory cell with filled sidewall memory element and method for fabricating the sameMACRONIX INT CO LTD·Filed 2008·Granted Feb 8, 2011·20 cites·15 claims
- 0889US8772747B2Composite target sputtering for forming doped phase change materialsMACRONIX INT CO LTD·Filed 2013·Granted Jul 8, 2014·8 cites·10 claims
- 0987US8324605B2Dielectric mesh isolated phase change structure for phase change memoryLUNG HSIANG-LAN·Filed 2008·Granted Dec 4, 2012·16 cites·21 claims
- 1087US7745807B2Current constricting phase change memory element structureIBM·Filed 2007·Granted Jun 29, 2010·11 cites·20 claims
- 1186US7491573B1Phase change materials for applications that require fast switching and high enduranceIBM·Filed 2008·Granted Feb 17, 2009·12 cites·1 claims
- 1285US10811427B1Semiconductor structure and manufacturing method thereofMACRONIX INT CO LTD·Filed 2019·Granted Oct 20, 2020·4 cites·7 claims
- 1380US12245432B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 1479US9330764B2Array fanout pass transistor structureMACRONIX INT CO LTD·Filed 2014·Granted May 3, 2016·4 cites·20 claims
- 1578US7510929B2Method for making memory cell deviceMACRONIX INT CO LTD·Filed 2006·Granted Mar 31, 2009·9 cites·6 claims
- 1676US8198619B2Phase change memory cell structureLEE MING-HSIU·Filed 2009·Granted Jun 12, 2012·8 cites·15 claims
- 1775US2025176183A1Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1875US2025008738A1Method of forming memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1974US2025301658A1Semiconductor memory structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2073US12501700B2Integrated circuit, semiconductor device having stop segment in connection region between logic region and memory cell regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 2172US12108605B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 1, 2024·0 cites·15 claims
- 2272US8445313B2Method for forming a self-aligned bit line for PCRAM and self-aligned etch back processBREITWISCH MATTHEW J·Filed 2012·Granted May 21, 2013·2 cites·17 claims
- 2370US12408347B2Method for forming a 3-D semiconductor memory structure comprising horizontal and vertical conductive linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 2470US11937426B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·20 claims
- 2569US8779408B2Phase change memory cell structureLEE MING-HSIU·Filed 2012·Granted Jul 15, 2014·3 cites·14 claims
- 2666US11996464B2Method of fabricating diode structureJIANGSU ADVANCED MEMORY TECH CO LTD·Filed 2022·Granted May 28, 2024·0 cites·9 claims
- 2766US8623734B2Method to selectively grow phase change material inside a via holeCHEN CHIEH-FANG·Filed 2011·Granted Jan 7, 2014·2 cites·19 claims
- 2866US8273598B2Method for forming a self-aligned bit line for PCRAM and self-aligned etch back processBREITWISCH MATTHEW J·Filed 2011·Granted Sep 25, 2012·1 cites·20 claims
- 2966US8059449B2Phase change device having two or more substantial amorphous regions in high resistance stateSHIH YEN-HAO·Filed 2010·Granted Nov 15, 2011·1 cites·18 claims
- 3065US8064247B2Rewritable memory device based on segregation/re-absorptionLEE MING-HSIU·Filed 2009·Granted Nov 22, 2011·5 cites·26 claims
- 3165US8062833B2Chalcogenide layer etching methodCHEN CHIEH FANG·Filed 2006·Granted Nov 22, 2011·2 cites·15 claims
- 3264US8378328B2Phase change memory random access device using single-element phase change materialIBM·Filed 2008·Granted Feb 19, 2013·5 cites·16 claims
- 3363US8263960B2Phase change memory cell with filled sidewall memory element and method for fabricating the sameLUNG HSIANG-LAN·Filed 2010·Granted Sep 11, 2012·2 cites·14 claims
- 3460US11362192B2Method of fabricating diode structureJIANGSU ADVANCED MEMORY TECH CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·11 claims
- 3558US2025231863A1Compute-in-memory circuits and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3655US7514367B2Method for manufacturing a narrow structure on an integrated circuitMACRONIX INT CO LTD·Filed 2006·Granted Apr 7, 2009·3 cites·13 claims
- 3755US7483316B2Method and apparatus for refreshing programmable resistive memoryMACRONIX INT CO LTD·Filed 2007·Granted Jan 27, 2009·3 cites·22 claims
- 3854US2009230377A1Phase Change Materials for Applications that Require Fast Switching and High EnduranceIBM·Filed 2009·Application pending·0 cites
- 3953US8537609B2Memory device and method of operating the sameLEE MING-HSIU·Filed 2011·Granted Sep 17, 2013·1 cites·17 claims
- 4052US7897954B2Dielectric-sandwiched pillar memory deviceMACRONIX INT CO LTD·Filed 2008·Granted Mar 1, 2011·2 cites·19 claims
- 4150US2011049456A1Phase change structure with composite doping for phase change memoryMACRONIX INT CO LTD·Filed 2009·Application pending·0 cites
- 4242US10685971B2Three dimensional memory device and method for fabricating the sameMACRONIX INT CO LTD·Filed 2018·Granted Jun 16, 2020·0 cites·11 claims
- 4339US2011108792A1Single Crystal Phase Change MaterialIBM·Filed 2009·Application pending·0 cites
- 4433US2008165569A1Resistance Limited Phase Change Memory MaterialCHEN CHIEH-FANG·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →