US2009230377A1PendingUtilityA1
Phase Change Materials for Applications that Require Fast Switching and High Endurance
Est. expiryMar 13, 2028(~1.6 yrs left)· nominal 20-yr term from priority
H10N 70/884H10N 70/231H10N 70/026H10N 70/826
54
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A memory device utilizing a phase change material as the storage medium, the phase change material based on antimony as the solvent in a solid solution; wherein the memory device further includes a means for heating the phase change material.
Claims
exact text as granted — not AI-modified1 . A phase change memory cell device comprising:
a phase change material comprising a solid solution consisting essentially of antimony as a solvent, and a solute which is a member selected from the group consisting of germanium, arsenic, tellurium, strontium, sulfur, tin and mixtures thereof and, optionally, a dopant; wherein the solid solution presents a crystalline phase and an amorphous phase, and wherein the crystalline phase has the crystal structure of the solvent; and
a component for applying heat to the phase change material, wherein the component is a member selected from the group consisting of electrodes, a scanning probe microscopy-based element, a laser and combinations thereof.Join the waitlist — get patent alerts
Track US2009230377A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.