Inventor · disambiguated record
Chia-Hsing Chen
Also filed as: CHEN CHIA-HSING
27 granted patents·8 pending applications·924 citations·filing 1994–2023
96Inventor score
Files withMACRONIX INT CO LTD20DELTA ELECTRONICS INC6CHEN CHIA-HSING2INVENTEC PUDONG TECH CORP1SUNG HUNG-CHENG1
Top patents by PatentIndex Score
35 records- 0197US6461949B1Method for fabricating a nitride read-only-memory (NROM)MACRONIX INT CO LTD·Filed 2001·Granted Oct 8, 2002·140 cites·2 claims
- 0296US6580135B2Silicon nitride read only memory structure and method of programming and erasureMACRONIX INT CO LTD·Filed 2002·Granted Jun 17, 2003·140 cites·6 claims
- 0395US6040993AMethod for programming an analog/multi-level flash EEPROMMACRONIX INT CO LTD·Filed 1998·Granted Mar 21, 2000·142 cites·33 claims
- 0494US6576511B2Method for forming nitride read only memoryMACRONIX INT CO LTD·Filed 2001·Granted Jun 10, 2003·148 cites·22 claims
- 0594US6468864B1Method of fabricating silicon nitride read only memoryMACRONIX INT CO LTD·Filed 2001·Granted Oct 22, 2002·132 cites·9 claims
- 0693US6757193B2Coding method of multi-level memory cellMACRONIX INT CO LTD·Filed 2002·Granted Jun 29, 2004·84 cites·17 claims
- 0786US11772858B2Airtight deviceDELTA ELECTRONICS INC·Filed 2022·Granted Oct 3, 2023·2 cites·22 claims
- 0885US10874036B2Cabinet and electronic deviceDELTA ELECTRONICS INC·Filed 2019·Granted Dec 22, 2020·4 cites·10 claims
- 0976US6751127B1Systems and methods for refreshing non-volatile memoryMACRONIX INT CO LTD·Filed 2002·Granted Jun 15, 2004·23 cites·21 claims
- 1075US6633500B1Systems and methods for refreshing a non-volatile memory using a tokenMACRONIX INT CO LTD·Filed 2002·Granted Oct 14, 2003·21 cites·22 claims
- 1174US9171120B2Method of converting between non-volatile memory technologies and system for implementing the methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 27, 2015·2 cites·20 claims
- 1273US6639839B1Sensing method for EEPROM refresh schemeMACRONIX INT CO LTD·Filed 2002·Granted Oct 28, 2003·20 cites·8 claims
- 1372US6455896B1Protection circuit for a memory arrayMACRONIX INT CO LTD·Filed 2001·Granted Sep 24, 2002·18 cites·16 claims
- 1465US6608778B1Method for operating a NROM deviceMACRONIX INT CO LTD·Filed 2002·Granted Aug 19, 2003·15 cites·17 claims
- 1560US8930866B2Method of converting between non-volatile memory technologies and system for implementing the methodSUNG HUNG-CHENG·Filed 2013·Granted Jan 6, 2015·1 cites·20 claims
- 1658US6448101B1Method of integrating a photodiode and a CMOS transistor with a non-volatile memoryMACRONIX INT CO LTD·Filed 2001·Granted Sep 10, 2002·7 cites·15 claims
- 1757US12256519B2Immersion cooling system and immersion cooling methodDELTA ELECTRONICS INC·Filed 2022·Granted Mar 18, 2025·0 cites·14 claims
- 1856US9589095B2Method of converting between non-volatile memory technologies and system for implementing the methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·0 cites·20 claims
- 1955US10379986B2Hardware monitoring system and method thereforINVENTEC PUDONG TECH CORP·Filed 2017·Granted Aug 13, 2019·1 cites·17 claims
- 2055US2024240807A1Outdoor cabinet with protective damperDELTA ELECTRONICS INC·Filed 2023·Application pending·0 cites
- 2152US7742343B2Metal oxide semiconductor device and method for operating an array structure comprising the same devicesCHEN CHIA-HSING·Filed 2007·Granted Jun 22, 2010·1 cites·34 claims
- 2251US5454701AScrew compressor with rotors having hyper profileFiled 1994·Granted Oct 3, 1995·13 cites·4 claims
- 2351US2023038997A1Hanging deviceDELTA ELECTRONICS INC·Filed 2022·Application pending·0 cites
- 2450US12369272B2Immersion cooling system with airtight link latch cover structureDELTA ELECTRONICS INC·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 2548US6784053B2Method for preventing bit line to bit line leakage in memory cellMACRONIX INT CO LTD·Filed 2001·Granted Aug 31, 2004·5 cites·8 claims
- 2647US6466477B1Method of stabilizing reference bit of multi-bit memory cellMACRONIX INT CO LTD·Filed 2001·Granted Oct 15, 2002·3 cites·2 claims
- 2739US6608499B2Method for compensating a threshold voltage of a neighbor bitMACRONIX INT CO LTD·Filed 2002·Granted Aug 19, 2003·2 cites·14 claims
- 2836US2010213528A1Metal oxide semiconductor device and method for operating an array structure comprising the same devicesCHEN CHIA-HSING·Filed 2010·Application pending·0 cites
- 2935US2002182829A1Method for forming nitride read only memory with indium pocket regionFiled 2001·Application pending·0 cites
- 3033US7026216B2Method for fabricating nitride read-only memoryMACRONIX INT CO LTD·Filed 2002·Granted Apr 11, 2006·0 cites·10 claims
- 3133US2002074590A1Non-volatile flash memory cell with asymmetric threshold voltageMACRONIX INT CO LTD·Filed 2000·Application pending·0 cites
- 3233US2002066923A1Non-volatile flash memory cell with short floating gateMACRONIX INT CO LTD·Filed 2000·Application pending·0 cites
- 3333US2002146885A1Method of fabricating a nitride read only memory cellFiled 2002·Application pending·0 cites
- 3433US2002074591A1Non-volatile flash memory cell with application of drain induced barrier lowering phenomenonMACRONIX INT CO LTD·Filed 2000·Application pending·0 cites
- 3528US6562548B2Method for fabricating a mask read-only memoryMACRONIX INT CO LTD·Filed 2001·Granted May 13, 2003·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →