Inventor · disambiguated record
Chih-Hsuan Chen
Also filed as: CHEN CHIH-HSUAN
26 granted patents·8 pending applications·9 citations·filing 2013–2025
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD28HIWIN TECH CORP2TOKYO ELECTRON LTD2NANYA TECHNOLOGY CORP1QUANTA COMP INC1
Top patents by PatentIndex Score
34 records- 0197US11996484B2Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·4 cites·20 claims
- 0293US12294030B2Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 6, 2025·1 cites·20 claims
- 0387US12315738B2Method of forming a gate structure including semiconductor material implantation into dummy gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 0486US12159924B2Structure and method for multigate devices with suppressed diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 3, 2024·1 cites·20 claims
- 0585US12477811B2High-k gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 0685US11949016B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·1 cites·20 claims
- 0784US2025301783A1Gate Structures Having Neutral Zones to Minimize Metal Gate Boundary Effects and Methods of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0884US2024395896A1High-k gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0983US12336281B2Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1081US2025311293A1Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1179US12356660B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1279US12218227B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1379US12027425B2Method of forming a gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 1479US2025133761A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1578US11862706B2High-K gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 1676US2025212380A1Device and method for tuning threshold voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1775US11908866B2Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 1875US2024379801A1Tuning gate lengths in multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1972US11482610B2Method of forming a gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 25, 2022·0 cites·20 claims
- 2071US11349009B2High-k gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 2169US11742416B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 2269US2025185228A1Memory Active Region Layout for Improving Memory PerformanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2368US12250803B2Device and method for tuning threshold voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
- 2468US12249636B2Tuning gate lengths in multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
- 2565US11329042B2Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 10, 2022·0 cites·21 claims
- 2663US12040325B2Integrated circuit structure with a reduced amount of defects and methods for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·0 cites·20 claims
- 2762US9201462B2Portable computerQUANTA COMP INC·Filed 2013·Granted Dec 1, 2015·2 cites·9 claims
- 2861US12219747B2Memory active region layout for improving memory performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 4, 2025·0 cites·20 claims
- 2952US11239121B2Metal gate contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 3049US9209041B2Plasma processing method and plasma processing apparatusTOKYO ELECTRON LTD·Filed 2013·Granted Dec 8, 2015·0 cites·8 claims
- 3148US11908510B2Fuse device and operation method thereofNANYA TECHNOLOGY CORP·Filed 2022·Granted Feb 20, 2024·0 cites·10 claims
- 3247US9953862B2Plasma processing method and plasma processing apparatusTOKYO ELECTRON LTD·Filed 2015·Granted Apr 24, 2018·0 cites·16 claims
- 3336US10286567B2Non-contact gesture controllable robotHIWIN TECH CORP·Filed 2017·Granted May 14, 2019·0 cites·10 claims
- 3436US2017182662A1Robot safety guard systemHIWIN TECH CORP·Filed 2016·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Chih-Hsuan Chen files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →