Inventor · disambiguated record
Chien-Li Cheng
Also filed as: CHENG CHIEN-LI
17 granted patents·4 pending applications·101 citations·filing 2001–2017
92Inventor score
Files withNANYA TECHNOLOGY CORP14TAIWAN SEMICONDUCTOR MFG4AU OPTRONICS CORP1CHENG CHIEN-LI1LIN SHIAN-JYH1
Top patents by PatentIndex Score
21 records- 0185US6518148B1Method for protecting STI structures with low etching rate linersTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Feb 11, 2003·48 cites·20 claims
- 0282US7316978B2Method for forming recessesNANYA TECHNOLOGY CORP·Filed 2005·Granted Jan 8, 2008·8 cites·20 claims
- 0380US7897501B2Method of fabricating a field-effect transistor having robust sidewall spacersTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Mar 1, 2011·9 cites·21 claims
- 0479US7679137B2Method for fabricating recessed gate MOS transistor deviceNANYA TECHNOLOGY CORP·Filed 2007·Granted Mar 16, 2010·8 cites·3 claims
- 0576US7179748B1Method for forming recessesNANYA TECHNOLOGY CORP·Filed 2005·Granted Feb 20, 2007·5 cites·19 claims
- 0673US7795090B2Electrical device and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2008·Granted Sep 14, 2010·3 cites·9 claims
- 0772US7563686B2Method for forming a memory device with a recessed gateNANYA TECHNOLOGY CORP·Filed 2005·Granted Jul 21, 2009·4 cites·5 claims
- 0870US7638391B2Semiconductor memory device and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2007·Granted Dec 29, 2009·3 cites·18 claims
- 0968US7446355B2Electrical device and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2006·Granted Nov 4, 2008·2 cites·3 claims
- 1062US7382028B2Method for forming silicide and semiconductor device formed therebyTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 3, 2008·2 cites·12 claims
- 1156US7190033B2CMOS device and method of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 13, 2007·7 cites·23 claims
- 1255US7473598B2Method for forming stack capacitorNANYA TECHNOLOGY CORP·Filed 2007·Granted Jan 6, 2009·2 cites·17 claims
- 1352US7923325B2Deep trench device with single sided connecting structure and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2009·Granted Apr 12, 2011·0 cites·8 claims
- 1452US2010012179A1Solar cell with high photon utilization and method of manufacturing the sameCHENG CHIEN-LI·Filed 2009·Application pending·0 cites
- 1550US7592233B2Method for forming a memory device with a recessed gateNANYA TECHNOLOGY CORP·Filed 2007·Granted Sep 22, 2009·0 cites·9 claims
- 1649US7619271B2Deep trench device with single sided connecting structure and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2007·Granted Nov 17, 2009·0 cites·8 claims
- 1742US11287873B2Sensing device and control methodAU OPTRONICS CORP·Filed 2017·Granted Mar 29, 2022·0 cites·11 claims
- 1840US2007228435A1Semiconductor device and fabrication thereofNANYA TECHNOLOGY CORP·Filed 2006·Application pending·0 cites
- 1940US2007190712A1Semiconductor device having a trench gate and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2006·Application pending·0 cites
- 2039US2007218612A1Method for fabricating a recessed-gate mos transistor deviceLIN SHIAN-JYH·Filed 2006·Application pending·0 cites
- 2131US7535045B2Checkerboard deep trench dynamic random access memory cell array layoutNANYA TECHNOLOGY CORP·Filed 2007·Granted May 19, 2009·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →