Inventor · disambiguated record
Cheng-Wei Cheng
Also filed as: CHENG CHENG · CHENG CHENG-WEI · CHENG CHENG-WEI ALLEN
131 granted patents·23 pending applications·372 citations·filing 2009–2023
99Inventor score
Top patents by PatentIndex Score
154 records- 0199US9287362B1Vertical field effect transistors with controlled overlap between gate electrode and source/drain contactsIBM·Filed 2014·Granted Mar 15, 2016·62 cites·10 claims
- 0297US8937299B2III-V finFETs on silicon substrateIBM·Filed 2013·Granted Jan 20, 2015·40 cites·10 claims
- 0396US9608160B1Polarization free gallium nitride-based photonic devices on nanopatterned siliconIBM·Filed 2016·Granted Mar 28, 2017·19 cites·17 claims
- 0496US9397226B2Vertical field effect transistors with controlled overlap between gate electrode and source/drain contactsIBM·Filed 2015·Granted Jul 19, 2016·12 cites·14 claims
- 0594US9564494B1Enhanced defect reduction for heteroepitaxy by seed shape engineeringIBM·Filed 2015·Granted Feb 7, 2017·9 cites·20 claims
- 0693US10037989B1III-V lateral bipolar integration with siliconIBM·Filed 2017·Granted Jul 31, 2018·8 cites·20 claims
- 0793US8975635B2Co-integration of elemental semiconductor devices and compound semiconductor devicesIBM·Filed 2012·Granted Mar 10, 2015·11 cites·20 claims
- 0893US8841177B2Co-integration of elemental semiconductor devices and compound semiconductor devicesIBM·Filed 2012·Granted Sep 23, 2014·11 cites·25 claims
- 0992US10546926B2III-V semiconductor devices with selective oxidationIBM·Filed 2019·Granted Jan 28, 2020·4 cites·17 claims
- 1092US9048173B2Dual phase gallium nitride material formation on (100) siliconIBM·Filed 2012·Granted Jun 2, 2015·12 cites·13 claims
- 1191US9530643B2Selective epitaxy using epitaxy-prevention layersIBM·Filed 2015·Granted Dec 27, 2016·5 cites·20 claims
- 1291US9496347B1Graded buffer epitaxy in aspect ratio trappingIBM·Filed 2015·Granted Nov 15, 2016·7 cites·20 claims
- 1390US9401583B1Laser structure on silicon using aspect ratio trapping growthIBM·Filed 2015·Granted Jul 26, 2016·5 cites·20 claims
- 1489US9406566B1Integration of III-V compound materials on siliconIBM·Filed 2015·Granted Aug 2, 2016·5 cites·3 claims
- 1589US9059075B2Selective gallium nitride regrowth on (100) siliconIBM·Filed 2013·Granted Jun 16, 2015·7 cites·14 claims
- 1688US12495722B2Suppression of void-formation of PCM materialsIBM·Filed 2021·Granted Dec 9, 2025·1 cites·8 claims
- 1788US9508640B2Multiple via structure and methodGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 29, 2016·9 cites·17 claims
- 1887US10367060B2III-V semiconductor devices with selective oxidationIBM·Filed 2016·Granted Jul 30, 2019·3 cites·8 claims
- 1986US9553166B1Asymmetric III-V MOSFET on silicon substrateIBM·Filed 2015·Granted Jan 24, 2017·4 cites·10 claims
- 2086US9123569B1Complementary metal-oxide-semiconductor structure with III-V and silicon germanium transistors on insulatorIBM·Filed 2014·Granted Sep 1, 2015·7 cites·20 claims
- 2185US9773903B2Asymmetric III-V MOSFET on silicon substrateIBM·Filed 2016·Granted Sep 26, 2017·3 cites·18 claims
- 2285US9397161B1Reduced current leakage semiconductor deviceIBM·Filed 2015·Granted Jul 19, 2016·3 cites·20 claims
- 2385US9344200B2Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowthIBM·Filed 2014·Granted May 17, 2016·5 cites·20 claims
- 2485US8569097B1Flexible III-V solar cell structureBEDELL STEPHEN W·Filed 2012·Granted Oct 29, 2013·5 cites·16 claims
- 2583US10886415B2Multi-state transistor devices with multiple threshold voltage channelsIBM·Filed 2019·Granted Jan 5, 2021·3 cites·7 claims
- 2683US10460937B2Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial filmsIBM·Filed 2017·Granted Oct 29, 2019·2 cites·10 claims
- 2783US8492187B2High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrateCHENG CHENG-WEI·Filed 2011·Granted Jul 23, 2013·4 cites·18 claims
- 2882US9947533B2Selective epitaxy using epitaxy-prevention layersIBM·Filed 2016·Granted Apr 17, 2018·2 cites·17 claims
- 2982US9093532B2Overlapped III-V finFET with doped semiconductor extensionsIBM·Filed 2013·Granted Jul 28, 2015·5 cites·10 claims
- 3082USD654355SCable tieCHENG CHENG-WEI ALLEN·Filed 2009·Granted Feb 21, 2012·27 cites·1 claims
- 3181US10043663B2Enhanced defect reduction for heteroepitaxy by seed shape engineeringIBM·Filed 2016·Granted Aug 7, 2018·2 cites·20 claims
- 3281US8482033B2High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrateCHENG CHENG-WEI·Filed 2012·Granted Jul 9, 2013·3 cites·20 claims
- 3380US10923348B2Gate-all-around field effect transistor using template-assisted-slective-epitaxyIBM·Filed 2019·Granted Feb 16, 2021·2 cites·20 claims
- 3480US9407066B2III-V lasers with integrated silicon photonic circuitsGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 2, 2016·3 cites·13 claims
- 3579US9059232B2T-shaped compound semiconductor lateral bipolar transistor on semiconductor-on-insulatorIBM·Filed 2013·Granted Jun 16, 2015·4 cites·9 claims
- 3679US8624361B1Self-formation of high-density defect-free and aligned nanostructuresIBM·Filed 2012·Granted Jan 7, 2014·3 cites·22 claims
- 3778US11818971B2PCM cell with resistance drift correctionIBM·Filed 2022·Granted Nov 14, 2023·0 cites·19 claims
- 3877US9595805B2III-V photonic integrated circuits on silicon substrateIBM·Filed 2014·Granted Mar 14, 2017·2 cites·11 claims
- 3976US10205003B1Surface roughness of III-V fin formed on silicon sidewall by implementing sacrificial buffersIBM·Filed 2018·Granted Feb 12, 2019·2 cites·20 claims
- 4076US9263626B1Crystalline thin film photovoltaic cellIBM·Filed 2015·Granted Feb 16, 2016·2 cites·20 claims
- 4175US9099381B2Selective gallium nitride regrowth on (100) siliconIBM·Filed 2012·Granted Aug 4, 2015·2 cites·16 claims
- 4274US10304947B1Smoothing surface roughness of III-V semiconductor fins formed from silicon mandrels by regrowthIBM·Filed 2017·Granted May 28, 2019·1 cites·15 claims
- 4374US8946054B2Crack control for substrate separationIBM·Filed 2013·Granted Feb 3, 2015·2 cites·20 claims
- 4474US8796120B2High throughput epitaxial lift off for flexible electronicsIBM·Filed 2013·Granted Aug 5, 2014·2 cites·24 claims
- 4573US9079269B2Spalling with laser-defined spall edge regionsBEDELL STEPHEN W·Filed 2011·Granted Jul 14, 2015·2 cites·11 claims
- 4673US9054192B1Integration of Ge-containing fins and compound semiconductor finsIBM·Filed 2013·Granted Jun 9, 2015·2 cites·20 claims
- 4772US9865469B2Epitaxial lift-off process with guided etchingIBM·Filed 2017·Granted Jan 9, 2018·1 cites·18 claims
- 4872US9627482B2Reduced current leakage semiconductor deviceIBM·Filed 2016·Granted Apr 18, 2017·1 cites·10 claims
- 4972US9529956B2Active region design layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 27, 2016·3 cites·17 claims
- 5072US9495019B2Display method of mobile device selection and terminal deviceHUAWEI TECH CO LTD·Filed 2014·Granted Nov 15, 2016·3 cites·10 claims
Showing the top 50 of 154 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →