Inventor · disambiguated record
Cheng Chi
Also filed as: CHI CHENG · CHI CHENG-HSIAN
47 granted patents·14 pending applications·392 citations·filing 1991–2024
98Inventor score
Top patents by PatentIndex Score
61 records- 0197US10157798B1Uniform bottom spacers in vertical field effect transistorsIBM·Filed 2017·Granted Dec 18, 2018·23 cites·13 claims
- 0297US10109533B1Nanosheet devices with CMOS epitaxy and method of formingGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 23, 2018·23 cites·10 claims
- 0397US9589847B1Metal layer tip to tip shortIBM·Filed 2016·Granted Mar 7, 2017·21 cites·13 claims
- 0496US10461174B1Vertical field effect transistors with self aligned gate and source/drain contactsIBM·Filed 2018·Granted Oct 29, 2019·18 cites·20 claims
- 0596US9786557B1Two-dimensional self-aligned super via integration on self-aligned gate contactIBM·Filed 2016·Granted Oct 10, 2017·18 cites·14 claims
- 0696US9536750B1Method for fin formation with a self-aligned directed self-assembly process and cut-last schemeIBM·Filed 2015·Granted Jan 3, 2017·14 cites·8 claims
- 0796US6918198B2Footwear with an air cushion and a method for making the sameFiled 2003·Granted Jul 19, 2005·79 cites·7 claims
- 0895US10431651B1Nanosheet transistor with robust source/drain isolation from substrateIBM·Filed 2018·Granted Oct 1, 2019·12 cites·15 claims
- 0993US10361315B1Method and apparatus of fabricating source and drain epitaxy for vertical field effect transistorIBM·Filed 2018·Granted Jul 23, 2019·9 cites·20 claims
- 1091US10366931B2Nanosheet devices with CMOS epitaxy and method of formingGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 30, 2019·6 cites·15 claims
- 1190US6540864B1Method of making a shoe having a foamed insole with peripheral patternFiled 2000·Granted Apr 1, 2003·46 cites·11 claims
- 1287US10283407B2Two-dimensional self-aligned super via integration on self-aligned gate contactIBM·Filed 2017·Granted May 7, 2019·4 cites·20 claims
- 1386US10832943B2Gate contact over active region with self-aligned source/drain contactIBM·Filed 2019·Granted Nov 10, 2020·4 cites·15 claims
- 1485US10658459B2Nanosheet transistor with robust source/drain isolation from substrateIBM·Filed 2019·Granted May 19, 2020·3 cites·6 claims
- 1585US10242881B2Self-aligned single dummy fin cut with tight pitchIBM·Filed 2017·Granted Mar 26, 2019·3 cites·10 claims
- 1684US11508823B2Low capacitance low RC wrap-around-contactIBM·Filed 2020·Granted Nov 22, 2022·1 cites·20 claims
- 1783US9887133B2Two-dimensional self-aligned super via integration on self-aligned gate contactIBM·Filed 2017·Granted Feb 6, 2018·3 cites·10 claims
- 1879US9947548B2Self-aligned single dummy fin cut with tight pitchIBM·Filed 2016·Granted Apr 17, 2018·2 cites·13 claims
- 1978US10665586B2Method of concurrently forming source/drain and gate contacts and related deviceGLOBALFOUNDRIES INC·Filed 2017·Granted May 26, 2020·2 cites·20 claims
- 2078US9837402B1Method of concurrently forming source/drain and gate contacts and related deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 5, 2017·2 cites·14 claims
- 2174US10170591B2Self-aligned finFET formationIBM·Filed 2016·Granted Jan 1, 2019·1 cites·15 claims
- 2274US9929020B2Method for fin formation with a self-aligned directed self-assembly process and cut-last schemeIBM·Filed 2016·Granted Mar 27, 2018·1 cites·20 claims
- 2369US12135497B2Random weight initialization of non-volatile memory arrayIBM·Filed 2021·Granted Nov 5, 2024·0 cites·20 claims
- 2466US10916650B2Uniform bottom spacer for VFET devicesIBM·Filed 2020·Granted Feb 9, 2021·0 cites·16 claims
- 2566US5924140AKnee/elbow capFiled 1998·Granted Jul 20, 1999·42 cites·4 claims
- 2663US11916014B2Gate contact inside gate cut trenchIBM·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 2763US10593782B2Self-aligned finFET formationIBM·Filed 2018·Granted Mar 17, 2020·0 cites·17 claims
- 2863US10411127B2Forming a combination of long channel devices and vertical transport fin field effect transistors on the same substrateIBM·Filed 2018·Granted Sep 10, 2019·0 cites·20 claims
- 2963US6676782B2Method for making a shoe having a foamed midsole enclosed in the shoeFiled 2001·Granted Jan 13, 2004·13 cites·12 claims
- 3063US2019341489A1Forming a combination of long channel devices and vertical transport fin field effect transistors on the same substrateIBM·Filed 2019·Application pending·0 cites
- 3163US2019334033A1Forming a combination of long channel devices and vertical transport fin field effect transistors on the same substrateIBM·Filed 2019·Application pending·0 cites
- 3262US10418485B2Forming a combination of long channel devices and vertical transport Fin field effect transistors on the same substrateIBM·Filed 2018·Granted Sep 17, 2019·0 cites·20 claims
- 3362US10395939B2Method for fin formation with a self-aligned directed self-assembly process and cut-last schemeIBM·Filed 2018·Granted Aug 27, 2019·0 cites·20 claims
- 3462US2025344411A1Logic and cache hybrid bondingIBM·Filed 2024·Application pending·0 cites
- 3562US2025331198A1Memory chip stack hybrid bonded to a process chipIBM·Filed 2024·Application pending·0 cites
- 3661US10263099B2Self-aligned finFET formationIBM·Filed 2018·Granted Apr 16, 2019·0 cites·17 claims
- 3761US10084068B2Self-aligned finFET formationIBM·Filed 2017·Granted Sep 25, 2018·0 cites·20 claims
- 3861US2021151565A1Nanosheet devices with improved electrostatic integrityIBM·Filed 2020·Application pending·0 cites
- 3960US11527647B2Field effect transistor (FET) devicesIBM·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 4060US2025219022A1Embedded active chip within interposerIBM·Filed 2023·Application pending·0 cites
- 4159US10763342B2Semiconductor devices having equal thickness gate spacersIBM·Filed 2018·Granted Sep 1, 2020·0 cites·18 claims
- 4259US10475660B2Method for fin formation with a self-aligned directed self-assembly process and cut-last schemeIBM·Filed 2016·Granted Nov 12, 2019·0 cites·10 claims
- 4359US6413454B1Method for manufacturing E.V.A. foamed sports equipmentFiled 2000·Granted Jul 2, 2002·3 cites·13 claims
- 4459US5843352AProduction method for peripheral ornamental strips for foamed insolesFiled 1997·Granted Dec 1, 1998·18 cites·6 claims
- 4559US2025132293A1Hybrid high bandwidth memory stackIBM·Filed 2023·Application pending·0 cites
- 4657US11621333B2Gate contact structure for a transistor deviceGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 4, 2023·0 cites·14 claims
- 4757US10727308B2Gate contact structure for a transistorGLOBALFOUNDRIES INC·Filed 2019·Granted Jul 28, 2020·0 cites·20 claims
- 4855US11205592B2Self-aligned top via structureIBM·Filed 2020·Granted Dec 21, 2021·0 cites·20 claims
- 4955US10622475B2Uniform bottom spacer for VFET devicesIBM·Filed 2018·Granted Apr 14, 2020·0 cites·15 claims
- 5055US5080324AStructure of faucet for automatic water supply and stoppageCHI CHENG HSIAN·Filed 1991·Granted Jan 14, 1992·21 cites·4 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →