Inventor · disambiguated record
Chel-Jong Choi
Also filed as: CHOI CHEL J · CHOI CHEL-JONG
11 granted patents·12 pending applications·45 citations·filing 2003–2012
86Inventor score
Files withSAMSUNG ELECTRONICS CO LTD10KOREA ELECTRONICS TELECOMM8CHOI CHEL-JONG1INST ELECTRONICS & TELECOMM RE1JANG MOON G1
Top patents by PatentIndex Score
23 records- 0189US7144680B2Electron beam lithography method using new materialSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 5, 2006·20 cites·20 claims
- 0268US7569846B2Phase-change memory device including nanowires and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 4, 2009·9 cites·9 claims
- 0363US7863121B2Method for fabricating Schottky barrier tunnel transistorKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Jan 4, 2011·1 cites·11 claims
- 0461US7713826B2Method of manufacturing semiconductor deviceKOREA ELECTRONICS TELECOMM·Filed 2008·Granted May 11, 2010·2 cites·16 claims
- 0560US7605068B2Semiconductor device having a silicide layer and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Oct 20, 2009·2 cites·13 claims
- 0655US7153770B2Method of manufacturing semiconductor device and semiconductor device manufactured using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 26, 2006·6 cites·11 claims
- 0751US7981735B2Method of manufacturing a Schottky barrier tunnel transistorKOREA ELECTRONICS TELECOMM·Filed 2009·Granted Jul 19, 2011·0 cites·8 claims
- 0850US7279422B2Semiconductor device with silicide film and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 9, 2007·5 cites·24 claims
- 0947US7545000B2Schottky barrier tunnel transistor and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Jun 9, 2009·0 cites·3 claims
- 1045US2011068326A1Schottky barrier tunnel transistor and method for fabricating the sameJANG MOON-GYU·Filed 2010·Application pending·0 cites
- 1144US7745316B2Method for fabricating Schottky barrier tunnel transistorKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Jun 29, 2010·0 cites·15 claims
- 1244US2006286787A1Method of manufacturing semiconductor device and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1343US2008128786A1High density semiconductor memory device and method for manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2007·Application pending·0 cites
- 1441US2013075804A1High density semiconductor memory device and method for manufacturing the sameINST ELECTRONICS & TELECOMM RE·Filed 2012·Application pending·0 cites
- 1539US7449402B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 11, 2008·0 cites·13 claims
- 1639US2006019471A1Method for forming silicide nanowireSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1739US2008124854A1Method for fabricating a semiconductor device and a semiconductor device fabricated by the methodCHOI CHEL-JONG·Filed 2007·Application pending·0 cites
- 1839US2005086946A1Specimen cooling system of focused ion beam apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 1938US2008128760A1Schottky barrier nanowire field effect transistor and method for fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2007·Application pending·0 cites
- 2037US2007187758A1SB-MOSFET (Schottky barrier metal-oxide-semiconductor field effect transistor) with low barrier height and fabricating method thereofJUN MYUNG S·Filed 2006·Application pending·0 cites
- 2137US2004256244A1Selective electrochemical etching method for two-dimensional dopant profilingSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 2236US2007128781A1Schottky barrier tunnel transistor and method of manufacturing the sameJANG MOON G·Filed 2006·Application pending·0 cites
- 2328US2005156258A1Method of forming silicide film having excellent thermal stability, semiconductor device and semiconductor memory device comprising silicide film formed of the same, and methods of manufacturing the semiconductor device and the semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →