Inventor · disambiguated record
Changhwan Choi
Also filed as: CHOI CHANGHWAN
17 granted patents·12 pending applications·97 citations·filing 2007–2025
92Inventor score
Top patents by PatentIndex Score
29 records- 0194US8941184B2Low threshold voltage CMOS deviceANDO TAKASHI·Filed 2011·Granted Jan 27, 2015·14 cites·9 claims
- 0294US7989902B2Scavenging metal stack for a high-k gate dielectricIBM·Filed 2009·Granted Aug 2, 2011·28 cites·25 claims
- 0393US9105745B2Fabrication of low threshold voltage and inversion oxide thickness scaling for a high-k metal gate p-type MOSFETIBM·Filed 2012·Granted Aug 11, 2015·13 cites·10 claims
- 0492US8367496B2Scavanging metal stack for a high-k gate dielectricIBM·Filed 2011·Granted Feb 5, 2013·13 cites·20 claims
- 0591US8304836B2Structure and method to obtain EOT scaled dielectric stacksJAGANNATHAN HEMANTH·Filed 2009·Granted Nov 6, 2012·10 cites·18 claims
- 0684US9263344B2Low threshold voltage CMOS deviceIBM·Filed 2014·Granted Feb 16, 2016·4 cites·9 claims
- 0783US8343839B2Scaled equivalent oxide thickness for field effect transistor devicesIBM·Filed 2010·Granted Jan 1, 2013·4 cites·10 claims
- 0878US9059314B2Structure and method to obtain EOT scaled dielectric stacksJAGANNATHAN HEMANTH·Filed 2012·Granted Jun 16, 2015·2 cites·13 claims
- 0973US8097500B2Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor deviceANDO TAKASHI·Filed 2008·Granted Jan 17, 2012·6 cites·13 claims
- 1070US9455203B2Low threshold voltage CMOS deviceIBM·Filed 2016·Granted Sep 27, 2016·1 cites·20 claims
- 1160US8415677B2Field-effect transistor device having a metal gate stack with an oxygen barrier layerADUSUMILLI PRANEET·Filed 2010·Granted Apr 9, 2013·2 cites·15 claims
- 1259US8940599B2Scaled equivalent oxide thickness for field effect transistor devicesIBM·Filed 2014·Granted Jan 27, 2015·0 cites·12 claims
- 1357US2015279937A1Structure and method to obtain eot scaled dielectric stacksIBM·Filed 2015·Application pending·0 cites
- 1457US2015279746A1Structure and method to obtain eot scaled dielectric stacksIBM·Filed 2015·Application pending·0 cites
- 1557US2015311127A1Structure and method to obtain eot scaled dielectric stacksIBM·Filed 2015·Application pending·0 cites
- 1657US2015311303A1Structure and method to obtain eot scaled dielectric stacksIBM·Filed 2015·Application pending·0 cites
- 1756US11153426B2Electronic device and control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 19, 2021·0 cites·16 claims
- 1855US8716813B2Scaled equivalent oxide thickness for field effect transistor devicesANDO TAKASHI·Filed 2012·Granted May 6, 2014·0 cites·12 claims
- 1955US2024130136A1Semiconductor memory device and method for fabricating the sameIUCF HYU·Filed 2023·Application pending·0 cites
- 2053US2025253227A1Conductive wirings and interconnect structures and integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2152US2021350441A1Electronic device and method for operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 2251US12256036B2Mobile terminalLG ELECTRONICS INC·Filed 2019·Granted Mar 18, 2025·0 cites·9 claims
- 2350US2015243662A1Low Threshold Voltage and Inversion Oxide Thickness Scaling for a High-K Metal Gate P-Type MOSFETIBM·Filed 2015·Application pending·0 cites
- 2448US2013032886A1Low Threshold Voltage And Inversion Oxide Thickness Scaling For A High-K Metal Gate P-Type MOSFETIBM·Filed 2011·Application pending·0 cites
- 2547US10630827B2Electronic device and control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·18 claims
- 2646US2010193896A1Method for nitridation of shallow trench isolation structure to prevent oxygen absorptionCHOI KISIK·Filed 2009·Application pending·0 cites
- 2746US2024196624A1Method of manufacturing ferroelectric-based 3-dimensional flash memorySAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2845US11869213B2Electronic device for analyzing skin image and method for controlling the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 9, 2024·0 cites·8 claims
- 2942US2009108294A1Scalable high-k dielectric gate stackIBM·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →