Assignee
ANDO TAKASHI
US35 patents
Top patents by PatentIndex Score
US8637384B2Jan 28, 2014
FinFET parasitic capacitance reduction using air gap
ANDO TAKASHI374 citations99
US8637930B2Jan 28, 2014
FinFET parasitic capacitance reduction using air gap
ANDO TAKASHI99 citations98
US8647972B1Feb 11, 2014
Multi-layer work function metal replacement gate
ANDO TAKASHI40 citations93
US8941184B2Jan 27, 2015
Low threshold voltage CMOS device
ANDO TAKASHI14 citations92
US8836037B2Sep 16, 2014
Structure and method to form input/output devices
ANDO TAKASHI7 citations84
US8786030B2Jul 22, 2014
Gate-last fabrication of quarter-gap MGHK FET
ANDO TAKASHI6 citations84
US8592264B2Nov 26, 2013
Source-drain extension formation in replacement metal gate transistor device
ANDO TAKASHI17 citations84
US8581351B2Nov 12, 2013
Replacement gate with reduced gate leakage current
ANDO TAKASHI10 citations84
US8420473B2Apr 16, 2013
Replacement gate devices with barrier metal for simultaneous processing
ANDO TAKASHI18 citations84
US8404530B2Mar 26, 2013
Replacement metal gate with a conductive metal oxynitride layer
ANDO TAKASHI7 citations84
US8659077B1Feb 25, 2014
Multi-layer work function metal replacement gate
ANDO TAKASHI6 citations83
US8735996B2May 27, 2014
Scavenging metal stack for a high-K gate dielectric
ANDO TAKASHI4 citations73
US8716118B2May 6, 2014
Replacement gate structure for transistor with a high-K gate stack
ANDO TAKASHI4 citations73
US8109751B2Feb 7, 2012
Imprint device and microstructure transfer method
ANDO TAKASHI6 citations73
US8097500B2Jan 17, 2012
Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device
ANDO TAKASHI6 citations71
US11064120B2Jul 13, 2021
Imaging-element inclination adjustment mechanism, method for adjusting inclination of imaging element, and imaging apparatus
ANDO TAKASHI0 citations63
US9252229B2Feb 2, 2016
Inversion thickness reduction in high-k gate stacks formed by replacement gate processes
ANDO TAKASHI2 citations63
US8865551B2Oct 21, 2014
Reducing the inversion oxide thickness of a high-k stack fabricated on high mobility semiconductor material
ANDO TAKASHI2 citations63
US8796784B2Aug 5, 2014
Devices and methods to optimize materials and properties for replacement metal gate structures
ANDO TAKASHI2 citations63
US8592296B2Nov 26, 2013
Gate-last fabrication of quarter-gap MGHK FET
ANDO TAKASHI2 citations63
US8491291B2Jul 23, 2013
Pattern transfer method and imprint device
ANDO TAKASHI2 citations63
US8133418B2Mar 13, 2012
Pattern transfer method and imprint device
ANDO TAKASHI3 citations63
US8525552B2Sep 3, 2013
Semiconductor integrated circuit device having a plurality of standard cells for leakage current suppression
ANDO TAKASHI4 citations62
US8092209B2Jan 10, 2012
Imprinting device
ANDO TAKASHI4 citations62
US8975747B2Mar 10, 2015
Wiring material and semiconductor module using the same
ANDO TAKASHI0 citations52
US8853751B2Oct 7, 2014
Reducing the inversion oxide thickness of a high-K stack fabricated on high mobility semiconductor material
ANDO TAKASHI1 citations52
US8785322B2Jul 22, 2014
Devices and methods to optimize materials and properties for replacement metal gate structures
ANDO TAKASHI1 citations52
US8716088B2May 6, 2014
Scavenging metal stack for a high-K gate dielectric
ANDO TAKASHI0 citations52
US8716813B2May 6, 2014
Scaled equivalent oxide thickness for field effect transistor devices
ANDO TAKASHI0 citations52
US8564066B2Oct 22, 2013
Interface-free metal gate stack
ANDO TAKASHI0 citations52
US8507383B2Aug 13, 2013
Fabrication of replacement metal gate devices
ANDO TAKASHI0 citations50
US8583018B2Nov 12, 2013
Fusing device and image forming apparatus using the same
ANDO TAKASHI0 citations42
US8662009B2Mar 4, 2014
Adhesive application apparatus
ANDO TAKASHI0 citations41
US8481779B2Jul 9, 2013
Method for producing N-substituted-2-amino-4-(hydroxymethylphosphinyl)-2-butenoic acid
ANDO TAKASHI0 citations41
US8893646B2Nov 25, 2014
Liquid application apparatus
ANDO TAKASHI0 citations39