Inventor · disambiguated record
Chen-Liang Chu
Also filed as: CHU CHEN · CHU CHEN-LIANG
35 granted patents·7 pending applications·45 citations·filing 2004–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD29TAIWAN SEMICONDUCTOR MFG6CHU CHEN-LIANG3HSIAO SHIH-KUANG1NANYA TECHNOLOGY CORP1
Top patents by PatentIndex Score
42 records- 0195US12237323B2Semiconductor device having improved electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 25, 2025·2 cites·20 claims
- 0291US9831340B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·6 cites·16 claims
- 0386US11189562B1Interconnection structure having increased conductive features and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Nov 30, 2021·2 cites·7 claims
- 0483US8513712B2Method and apparatus for forming a semiconductor gateCHU CHEN-LIANG·Filed 2009·Granted Aug 20, 2013·9 cites·20 claims
- 0583US7888734B2High-voltage MOS devices having gates extending into recesses of substratesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Feb 15, 2011·9 cites·20 claims
- 0681US10985256B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 20, 2021·1 cites·20 claims
- 0777US12211935B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 0875US7977743B2Alternating-doping profile for source/drain of a FETTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jul 12, 2011·5 cites·14 claims
- 0975US2025169191A1Semiconductor device having improved electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1074US11916060B2Semiconductor device having improved electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 1174US11715734B2Semiconductor device having improved electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 1, 2023·0 cites·20 claims
- 1274US2024379789A1Transistor device with recessed gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1372US9343465B2Integrated circuit for high-voltage device protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 17, 2016·2 cites·20 claims
- 1471US11508845B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 1571US10686047B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·1 cites·20 claims
- 1670US12176407B2Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer withinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 1770US11538914B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 1867US10930776B2High voltage LDMOS transistor and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 23, 2021·0 cites·20 claims
- 1967US7332387B2MOSFET structure and method of fabricating the samePROMOS TECHNOLOGIES INC·Filed 2006·Granted Feb 19, 2008·2 cites·11 claims
- 2066US9099556B2Transistor having an active region with wing structureCHU CHEN-LIANG·Filed 2011·Granted Aug 4, 2015·2 cites·20 claims
- 2165US9601585B2Transistor having a wing regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·1 cites·20 claims
- 2265US8183626B2High-voltage MOS devices having gates extending into recesses of substratesCHU CHEN-LIANG·Filed 2011·Granted May 22, 2012·2 cites·20 claims
- 2361US8377787B2Alternating-doping profile for source/drain of a FETTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 19, 2013·1 cites·19 claims
- 2459US10680019B2Selective polysilicon doping for gate induced drain leakage improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 9, 2020·0 cites·20 claims
- 2558US10847652B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 24, 2020·0 cites·20 claims
- 2658US10790387B2High voltage LDMOS transistor and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 29, 2020·0 cites·20 claims
- 2758US2025275166A1Semiconductor device and method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2856US2024379791A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2956US2024258373A1Transistor device having a gate setback from a gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3055US9911845B2High voltage LDMOS transistor and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 6, 2018·0 cites·20 claims
- 3155US2024379845A1Transistor structure and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3254US9466681B2Method and apparatus for forming a semiconductor gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 11, 2016·0 cites·20 claims
- 3354US9070663B2Method and apparatus for forming a semiconductor gateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 30, 2015·0 cites·20 claims
- 3451US10276596B2Selective polysilicon doping for gate induced drain leakage improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 30, 2019·0 cites·20 claims
- 3550US9299806B2High voltage drain-extended MOSFET having extra drain-OD additionTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 29, 2016·0 cites·18 claims
- 3649US11444169B2Transistor device with a gate structure having recesses overlying an interface between isolation and device regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 3748US11393809B2Semiconductor device having improved electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·0 cites·20 claims
- 3848US9035380B2High voltage drain-extended MOSFET having extra drain-OD additionTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 19, 2015·0 cites·20 claims
- 3945US9437494B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 6, 2016·0 cites·20 claims
- 4043US10164037B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 4142US2005106823A1MOSFET structure and method of fabricating the sameFiled 2004·Application pending·0 cites
- 4238US8673712B2Power transistor with high voltage counter implantHSIAO SHIH-KUANG·Filed 2012·Granted Mar 18, 2014·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →