Inventor · disambiguated record
Christine Dehm
Also filed as: DEHM CHRISTINE
21 granted patents·3 pending applications·420 citations·filing 1996–2007
96Inventor score
Top patents by PatentIndex Score
24 records- 0183US6468896B2Method of fabricating semiconductor componentsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Oct 22, 2002·29 cites·11 claims
- 0283US5804499APrevention of abnormal WSix oxidation by in-situ amorphous silicon depositionSIEMENS AG·Filed 1996·Granted Sep 8, 1998·53 cites·5 claims
- 0382US7005303B2Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devicesADVANCED TECH MATERIALS·Filed 2004·Granted Feb 28, 2006·27 cites·12 claims
- 0479US5674769AProcess for forming deep trench DRAMs with sub-groundrule gatesSIEMENS AG·Filed 1996·Granted Oct 7, 1997·39 cites·24 claims
- 0578US6787832B2Semiconductor memory cell and semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 7, 2004·23 cites·36 claims
- 0677US6730523B2Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devicesADVANCED TECH MATERIALS·Filed 2001·Granted May 4, 2004·17 cites·47 claims
- 0776US6228701B1Apparatus and method for minimizing diffusion in stacked capacitors formed on silicon plugsSIEMENS AG·Filed 1997·Granted May 8, 2001·38 cites·40 claims
- 0876US5998253AMethod of forming a dopant outdiffusion control structure including selectively grown silicon nitride in a trench capacitor of a DRAM cellSIEMENS AG·Filed 1997·Granted Dec 7, 1999·40 cites·14 claims
- 0975US6057220ATitanium polycide stabilization with a porous barrierIBM·Filed 1997·Granted May 2, 2000·36 cites·11 claims
- 1070US6500677B2Method for fabricating a ferroelectric memory configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 31, 2002·13 cites·20 claims
- 1169US6559003B2Method of producing a ferroelectric semiconductor memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 6, 2003·16 cites·20 claims
- 1268US6664158B2Ferroelectric memory configuration and a method for producing the configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 16, 2003·11 cites·3 claims
- 1367US7746683B2NOR and NAND memory arrangement of resistive memory elementsQIMONDA AG·Filed 2007·Granted Jun 29, 2010·6 cites·6 claims
- 1466US6303391B1Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devicesADVANCED TECH MATERIALS·Filed 1997·Granted Oct 16, 2001·27 cites·14 claims
- 1564US6844581B2Storage capacitor and associated contact-making structure and a method for fabricating the storage capacitor and the contact-making structureINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 18, 2005·12 cites·4 claims
- 1651US6670662B1Semiconductor storage component with storage cells, logic areas and filling structuresINFINEON TECHNOLOGIES AG·Filed 2000·Granted Dec 30, 2003·5 cites·10 claims
- 1750US7115897B2Semiconductor circuit configuration and semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 3, 2006·4 cites·57 claims
- 1849US6337239B1Layer configuration with a material layer and a diffusion barrier which blocks diffusing material components and process for producing a diffusion barrierSIEMENS AG·Filed 1999·Granted Jan 8, 2002·14 cites·11 claims
- 1945US6958501B2Contact-making structure for a ferroelectric storage capacitor and method for fabricating the structureINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 25, 2005·1 cites·13 claims
- 2044US7049628B2Semiconductor memory cell and semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 23, 2006·2 cites·56 claims
- 2142US2008099756A1Semiconductor Memory with Organic Selection TransistorKLAUK HAGEN·Filed 2005·Application pending·0 cites
- 2239US2007194301A1Semiconductor arrangement with non-volatile memoriesSEZI RECAI·Filed 2004·Application pending·0 cites
- 2338US6656376B1Process for cleaning CVD unitsSIEMENS AG·Filed 1999·Granted Dec 2, 2003·7 cites·27 claims
- 2436US2002061604A1Method for fabricating a ferroelectric or paraelectric metal oxide-containing layer and a memory component therefromFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →