Inventor · disambiguated record
Christian Dussarrat
Also filed as: DUSSARRAT CHRISTIAN
92 granted patents·45 pending applications·1,628 citations·filing 2002–2022
99Inventor score
Files withAIR LIQUIDE38DUSSARRAT CHRISTIAN34AIR LIQUIDE AMERICAN21L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude7GATINEAU JULIEN6
Top patents by PatentIndex Score
137 records- 0198US8227032B2Method of forming silicon oxide containing filmsDUSSARRAT CHRISTIAN·Filed 2006·Granted Jul 24, 2012·472 cites·12 claims
- 0298US7064083B2Hexakis(monohydrocarbylamino)disilanes and method for the preparation thereofAIR LIQUIDE·Filed 2005·Granted Jun 20, 2006·48 cites·3 claims
- 0397US9371338B2Organosilane precursors for ALD/CVD silicon-containing film applicationsAIR LIQUIDE AMERICAN·Filed 2013·Granted Jun 21, 2016·22 cites·19 claims
- 0497US8668957B2Method of forming dielectric films, new precursors and their use in semiconductor manufacturingDUSSARRAT CHRISTIAN·Filed 2007·Granted Mar 11, 2014·535 cites·22 claims
- 0597US7482286B2Method for forming dielectric or metallic filmsAIR LIQUIDE·Filed 2005·Granted Jan 27, 2009·44 cites·19 claims
- 0697US7019159B2Hexakis(monohydrocarbylamino) disilanes and method for the preparation thereofAIR LIQUIDE·Filed 2002·Granted Mar 28, 2006·77 cites·13 claims
- 0796US10094021B2Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing filmsAIR LIQUIDE·Filed 2015·Granted Oct 9, 2018·15 cites·19 claims
- 0896US9911590B2Methods of forming dielectric films, new precursors and their use in semiconductor manufacturingAIR LIQUIDE·Filed 2017·Granted Mar 6, 2018·14 cites·26 claims
- 0996US7192626B2Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor depositionAIR LIQUIDE·Filed 2003·Granted Mar 20, 2007·115 cites·16 claims
- 1094US9514959B2Fluorocarbon molecules for high aspect ratio oxide etchAIR LIQUIDE·Filed 2013·Granted Dec 6, 2016·14 cites·20 claims
- 1193US8357430B2Method for producing silicon nitride filmsAIR LIQUIDE·Filed 2005·Granted Jan 22, 2013·22 cites·4 claims
- 1293US8153832B2Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereofDUSSARRAT CHRISTIAN·Filed 2006·Granted Apr 10, 2012·12 cites·5 claims
- 1393US6936548B2Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor depositionAIR LIQUIDE·Filed 2002·Granted Aug 30, 2005·52 cites·32 claims
- 1492US8454928B2Tellurium precursors for GST depositionDUSSARRAT CHRISTIAN·Filed 2008·Granted Jun 4, 2013·14 cites·22 claims
- 1592US8399056B2Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturingBLASCO NICOLAS·Filed 2006·Granted Mar 19, 2013·15 cites·16 claims
- 1691US8617649B2Cyclopentadienyl transition metal precursors for deposition of transition metal-containing filmsDUSSARRAT CHRISTIAN·Filed 2012·Granted Dec 31, 2013·4 cites·16 claims
- 1791US8470402B2Method of depositing a metal-containing dielectric filmDUSSARRAT CHRISTIAN·Filed 2011·Granted Jun 25, 2013·10 cites·25 claims
- 1891US7951711B2Metal precursors for semiconductor applicationsAIR LIQUIDE·Filed 2008·Granted May 31, 2011·8 cites·28 claims
- 1990US8853075B2Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) processGATINEAU SATOKO·Filed 2009·Granted Oct 7, 2014·14 cites·20 claims
- 2090US8283201B2Preparation of lanthanide-containing precursors and deposition of lanthanide-containing filmsPALLEM VENKATESWARA R·Filed 2009·Granted Oct 9, 2012·13 cites·18 claims
- 2189US9711347B2Preparation of lanthanide-containing precursors and deposition of lanthanide-containing filmsAIR LIQUIDE AMERICAN·Filed 2016·Granted Jul 18, 2017·4 cites·29 claims
- 2289US8664446B1Purification of trimethylamineAIR LIQUIDE AMERICAN·Filed 2012·Granted Mar 4, 2014·10 cites·18 claims
- 2387US9499571B2Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing filmsL'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude·Filed 2014·Granted Nov 22, 2016·4 cites·20 claims
- 2487US8343860B1High C content molecules for C implantAIR LIQUIDE·Filed 2011·Granted Jan 1, 2013·8 cites·9 claims
- 2587US8092721B2Deposition of ternary oxide films containing ruthenium and alkali earth metalsGATINEAU SATOKO·Filed 2009·Granted Jan 10, 2012·8 cites·9 claims
- 2687US7972975B2Method for forming a dielectric film and novel precursors for implementing said methodAIR LIQUIDE·Filed 2006·Granted Jul 5, 2011·6 cites·4 claims
- 2786US8329583B2Metal precursors for semiconductor applicationsDUSSARRAT CHRISTIAN·Filed 2011·Granted Dec 11, 2012·2 cites·22 claims
- 2885US8809849B2Preparation of cerium-containing precursors and deposition of cerium-containing filmsAIR LIQUIDE AMERICAN·Filed 2013·Granted Aug 19, 2014·4 cites·11 claims
- 2984US9892932B2Chemistries for TSV/MEMS/power device etchingAIR LIQUIDE AMERICAN·Filed 2015·Granted Feb 13, 2018·3 cites·14 claims
- 3084US8377511B2Method for depositing silicon nitride films and/or silicon oxynitride films by chemical vapor depositionAIR LIQUIDE·Filed 2006·Granted Feb 19, 2013·5 cites·16 claims
- 3183US9822132B2Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applicationsAIR LIQUIDE AMERICAN·Filed 2014·Granted Nov 21, 2017·3 cites·14 claims
- 3283US8367531B1Aluminum implant using new compoundsAIR LIQUIDE·Filed 2011·Granted Feb 5, 2013·5 cites·9 claims
- 3383US7544389B2Precursor for film formation and method for forming ruthenium-containing filmAIR LIQUIDE·Filed 2005·Granted Jun 9, 2009·8 cites·17 claims
- 3482US8753718B2Method for the deposition of a ruthenium-containing filmL AIR LIQUIDE SOCIÉTÉ ANONYME POUR L ETUDE ET L EXPL DES PROCÉDÉS GEORGES CLAUDE·Filed 2013·Granted Jun 17, 2014·4 cites·19 claims
- 3582US8404878B2Titanium-containing precursors for vapor depositionPALLEM VENKATESWARA R·Filed 2010·Granted Mar 26, 2013·4 cites·13 claims
- 3682US8236979B2Methods for synthesis of heteroleptic cyclopentadienyl transition metal precursorsDUSSARRAT CHRISTIAN·Filed 2009·Granted Aug 7, 2012·3 cites·5 claims
- 3781US10103031B2Chemistries for TSV/MEMS/power device etchingAIR LIQUIDE AMERICAN·Filed 2017·Granted Oct 16, 2018·2 cites·18 claims
- 3880US11549182B2Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing filmsAIR LIQUIDE·Filed 2021·Granted Jan 10, 2023·0 cites·9 claims
- 3980US9663547B2Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing filmsL'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude·Filed 2014·Granted May 30, 2017·2 cites·10 claims
- 4078US10217629B2Method of forming dielectric films, new precursors and their use in semiconductor manufacturingAIR LIQUIDE·Filed 2018·Granted Feb 26, 2019·1 cites·20 claims
- 4177US9384963B2Preparation of cerium-containing precursor and deposition of cerium-containing filmsAIR LIQUIDE AMERICAN·Filed 2014·Granted Jul 5, 2016·2 cites·20 claims
- 4276US11152223B2Fluorocarbon molecules for high aspect ratio oxide etchAIR LIQUIDE AMERICAN·Filed 2019·Granted Oct 19, 2021·1 cites·18 claims
- 4375US10731251B2Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing filmsAIR LIQUIDE·Filed 2018·Granted Aug 4, 2020·0 cites·20 claims
- 4475US8298616B2Heteroleptic cyclopentadienyl transition metal precursors for deposition of transition metal-containing filmsDUSSARRAT CHRISTIAN·Filed 2009·Granted Oct 30, 2012·1 cites·19 claims
- 4574US11162175B2Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing filmsAIR LIQUIDE·Filed 2020·Granted Nov 2, 2021·0 cites·13 claims
- 4672US12489104B2Processes for forming metal oxide thin films on electrode interphase controlAIR LIQUIDE·Filed 2022·Granted Dec 2, 2025·0 cites·17 claims
- 4772US9045509B2Hafnium- and zirconium-containing precursors and methods of using the sameDUSSARRAT CHRISTIAN·Filed 2010·Granted Jun 2, 2015·1 cites·13 claims
- 4871US9583335B2Method of forming dielectric films, new precursors and their use in semiconductor manufacturingL'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude·Filed 2014·Granted Feb 28, 2017·1 cites·19 claims
- 4970US12497691B2Devices having a rare earth (oxy) fluoride coating for improved resistance to corrosive chemical environments and methods for making and using these devicesAIR LIQUIDE·Filed 2021·Granted Dec 16, 2025·0 cites·8 claims
- 5070US9938303B2Organosilane precursors for ALD/CVD silicon-containing film applicationsAIR LIQUIDE AMERICAN·Filed 2013·Granted Apr 10, 2018·0 cites·16 claims
Showing the top 50 of 137 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →