Inventor · disambiguated record
Chu-Chen Fu
Also filed as: FU CHU-CHEN
10 granted patents·2 pending applications·104 citations·filing 2009–2022
89Inventor score
Top patents by PatentIndex Score
12 records- 0197US10050194B1Resistive memory device including a lateral air gap around a memory element and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Aug 14, 2018·31 cites·9 claims
- 0297US9735202B1Implementation of VMCO area switching cell to VBL architectureSANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 15, 2017·22 cites·18 claims
- 0391US9054308B1Plasma reduction method for modifying metal oxide stoichiometry in ReRAMSANDISK 3D LLC·Filed 2014·Granted Jun 9, 2015·10 cites·19 claims
- 0488US8395927B2Memory cell with resistance-switching layers including breakdown layerKREUPL FRANZ·Filed 2011·Granted Mar 12, 2013·10 cites·20 claims
- 0587US9034689B2Non-volatile storage with metal oxide switching element and methods for fabricating the sameSANDISK 3D LLC·Filed 2013·Granted May 19, 2015·7 cites·13 claims
- 0686US8520424B2Composition of memory cell with resistance-switching layersKREUPL FRANZ·Filed 2011·Granted Aug 27, 2013·7 cites·26 claims
- 0782US8023310B2Nonvolatile memory cell including carbon storage element formed on a silicide layerSANDISK 3D LLC·Filed 2009·Granted Sep 20, 2011·13 cites·26 claims
- 0858US8551850B2Methods of forming a reversible resistance-switching metal-insulator-metal structureLI YUBAO·Filed 2009·Granted Oct 8, 2013·4 cites·16 claims
- 0957US12004357B2Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterningSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 1056US10026782B2Implementation of VMCO area switching cell to VBL architectureSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 17, 2018·0 cites·18 claims
- 1142US2014252298A1Methods and apparatus for metal oxide reversible resistance-switching memory devicesSANDISK 3D LLC·Filed 2013·Application pending·0 cites
- 1239US2013075685A1Methods and apparatus for including an air gap in carbon-based memory devicesLI YUBAO·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →