Inventor · disambiguated record
Christer Hallin
Also filed as: HALLIN CHRISTER
20 granted patents·7 pending applications·1,102 citations·filing 1995–2023
96Inventor score
Top patents by PatentIndex Score
27 records- 0198US7226805B2Sequential lithographic methods to reduce stacking fault nucleation sitesCREE INC·Filed 2006·Granted Jun 5, 2007·231 cites·32 claims
- 0296US6093253AMethod and a device for epitaxial growth of objects by chemical vapor depositionABB RESEARCH LTD·Filed 1998·Granted Jul 25, 2000·515 cites·20 claims
- 0394US10892356B2Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the sameCREE INC·Filed 2019·Granted Jan 12, 2021·9 cites·8 claims
- 0492US5704985ADevice and a method for epitaxially growing objects by CVDABB RESEARCH LTD·Filed 1995·Granted Jan 6, 1998·93 cites·8 claims
- 0590US7531433B2Homoepitaxial growth of SiC on low off-axis SiC wafersNORSTEL AB·Filed 2005·Granted May 12, 2009·23 cites·14 claims
- 0688US9306009B2Mix doping of a semi-insulating Group III nitrideCREE INC·Filed 2013·Granted Apr 5, 2016·8 cites·27 claims
- 0787US6039812ADevice for epitaxially growing objects and method for such a growthABB RESEARCH LTD·Filed 1997·Granted Mar 21, 2000·67 cites·17 claims
- 0882US7601986B2Epitaxial semiconductor structures having reduced stacking fault nucleation sitesCREE INC·Filed 2006·Granted Oct 13, 2009·6 cites·13 claims
- 0982US7109521B2Silicon carbide semiconductor structures including multiple epitaxial layers having sidewallsCREE INC·Filed 2004·Granted Sep 19, 2006·23 cites·17 claims
- 1080US12477770B2Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the sameWOLFSPEED INC·Filed 2023·Granted Nov 18, 2025·0 cites·38 claims
- 1179US6030661ADevice and a method for epitaxially growing objects by CVDABB RESEARCH LTD·Filed 1997·Granted Feb 29, 2000·36 cites·13 claims
- 1278US6048398ADevice for epitaxially growing objectsABB RESEARCH LTD·Filed 1995·Granted Apr 11, 2000·43 cites·14 claims
- 1377US7396410B2Featuring forming methods to reduce stacking fault nucleation sitesCREE INC·Filed 2006·Granted Jul 8, 2008·4 cites·18 claims
- 1476US10840334B2Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the sameCREE INC·Filed 2019·Granted Nov 17, 2020·2 cites·21 claims
- 1576US5792257AMethod for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVDABB RESEARCH LTD·Filed 1995·Granted Aug 11, 1998·30 cites·18 claims
- 1670US10192980B2Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the sameCREE INC·Filed 2017·Granted Jan 29, 2019·1 cites·20 claims
- 1768US11862719B2Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the sameCREE INC·Filed 2020·Granted Jan 2, 2024·0 cites·29 claims
- 1868US8492772B2Homoepitaxial growth of SiC on low off-axis SiC wafersELLISON ALEXANDRE·Filed 2009·Granted Jul 23, 2013·3 cites·12 claims
- 1965US7173285B2Lithographic methods to reduce stacking fault nucleation sitesCREE INC·Filed 2004·Granted Feb 6, 2007·7 cites·16 claims
- 2059US9608085B2Predisposed high electron mobility transistorCREE INC·Filed 2012·Granted Mar 28, 2017·1 cites·19 claims
- 2156US2024429120A1Topside Cooling for Semiconductor DeviceWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 2255US2024266419A1Semiconductor Device Having Semiconductor Structure with Polarity Inverting LayerWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 2355US2024266426A1Semiconductor Structure for Improved Radio Frequency Thermal ManagementWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 2455US2024421193A1Low Contact Resistance in Semiconductor Devices with Implanted RegionsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 2555US2024128336A1Methods of forming semiconductor structures and resulting semiconductor structuresWOLFSPEED INC·Filed 2022·Application pending·0 cites
- 2654US2024105824A1Barrier Structure for Sub-100 Nanometer Gate Length DevicesWOLFSPEED INC·Filed 2022·Application pending·0 cites
- 2753US2024355918A1Heteroepitaxial semiconductor devices with enhanced thermal dissipationWOFLSPEED INC·Filed 2023·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Christer Hallin files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →