Inventor · disambiguated record
Christoph Hohle
Also filed as: HOHLE CHRISTOPH
13 granted patents·5 pending applications·300 citations·filing 2002–2018
88Inventor score
Files withINFINEON TECHNOLOGIES AG10AZ ELECTRONIC MATERIALS USA1CHOI KANG-HOON1ELIAN KLAUS1FRAUNHOFER GES FORSCHUNG1
Top patents by PatentIndex Score
18 records- 0196US6893972B2Process for sidewall amplification of resist structures and for the production of structures having reduced structure sizeINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 17, 2005·280 cites·12 claims
- 0262US6770423B2Negative resist process with simultaneous development and silylationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 3, 2004·7 cites·8 claims
- 0351US7052820B2Silicon-containing resist for photolithographyINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 30, 2006·3 cites·10 claims
- 0445US7041426B2Photoresist based on polycondensates and having an increased resolution for use in 157 nanometer lithographyINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 9, 2006·1 cites·16 claims
- 0544US7169531B2Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivativesAZ ELECTRONIC MATERIALS USA·Filed 2004·Granted Jan 30, 2007·2 cites·12 claims
- 0642US11079411B2Electromechanical component, electromechanical component arrangement, method of detecting a potential difference by using an electromechanical component, and method for performing a functional test on the electromechanical componentFRAUNHOFER GES FORSCHUNG·Filed 2018·Granted Aug 3, 2021·0 cites·34 claims
- 0742US6806027B2Chemically amplified photoresist and process for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography through the use of fluorinated cinnamic acid derivativesINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 19, 2004·5 cites·14 claims
- 0842US2008003521A1Process and a device for creating a pattern in a photoresist layerELIAN KLAUS·Filed 2006·Application pending·0 cites
- 0940US2009097004A1Lithography Apparatus, Masks for Non-Telecentric Exposure and Methods of Manufacturing Integrated CircuitsQIMONDA AG·Filed 2007·Application pending·0 cites
- 1037US2006105274A1Method for forming a lithography maskKRAGLER KARL·Filed 2005·Application pending·0 cites
- 1135US6759184B2Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomersINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 6, 2004·2 cites·12 claims
- 1235US2003082483A1Chemically amplified photoresist and process for structuring substrates having resist copolymers with enhanced transparency resulting from fluorinating the photochemically cleavable leaving groups and being applicable to 157 nm photolithographyFiled 2002·Application pending·0 cites
- 1334US8227177B2Method for multiple irradiation of a resistCHOI KANG-HOON·Filed 2007·Granted Jul 24, 2012·0 cites·26 claims
- 1434US7045273B2Process for silylating photoresists in the UV rangeINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 16, 2006·0 cites·10 claims
- 1534US7033740B2Photoresists with reaction anchors for chemical consolidation of resist structures for exposures at 157 nmINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 25, 2006·0 cites·4 claims
- 1634US6974655B2Silicon resist for photolithography at short exposure wavelengths and process for making photoresistsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 13, 2005·0 cites·9 claims
- 1734US2003096194A1Silylating process for photoresists in the UV regionFiled 2002·Application pending·0 cites
- 1828US7405028B2Polymers based on cinnamic acid as a bottom antireflective coating for 157 NM photolithographyINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jul 29, 2008·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →