Inventor · disambiguated record
Ching-Nan Hsiao
Also filed as: HSIAO CHING-NAN
27 granted patents·13 pending applications·214 citations·filing 2002–2010
95Inventor score
Top patents by PatentIndex Score
40 records- 0193US6916715B2Method for fabricating a vertical NROM cellNANYA TECHNOLOGY CORP·Filed 2003·Granted Jul 12, 2005·51 cites·10 claims
- 0286US7682902B2Memory structure and method of making the sameNANYA TECHNOLOGY CORP·Filed 2007·Granted Mar 23, 2010·16 cites·8 claims
- 0385US7022573B2Stack gate with tip vertical memory and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2004·Granted Apr 4, 2006·32 cites·8 claims
- 0482US7700991B2Two bit memory structure and method of making the sameNANYA TECHNOLOGY CORP·Filed 2007·Granted Apr 20, 2010·11 cites·7 claims
- 0582US6670246B1Method for forming a vertical nitride read-only memoryNANYA TECHNOLOGY CORP·Filed 2003·Granted Dec 30, 2003·31 cites·16 claims
- 0679US8003480B2Process using oxide supporter for manufacturing a capacitor lower electrode of a micro stacked DRAMINOTERA MEMORIES INC·Filed 2010·Granted Aug 23, 2011·6 cites·14 claims
- 0775US6653188B1Method of forming poly tip of floating gate in split-gate memoryNANYA TECHNOLOGY CORP·Filed 2002·Granted Nov 25, 2003·26 cites·17 claims
- 0867US6808987B2Vertical nitride read-only memory cell and method for forming the sameNANYA TECHNOLOGY CORP·Filed 2003·Granted Oct 26, 2004·13 cites·17 claims
- 0966US7781279B2Method for manufacturing a memoryNANYA TECHNOLOGY CORP·Filed 2008·Granted Aug 24, 2010·2 cites·7 claims
- 1066US6870216B2Stack gate with tip vertical memory and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2003·Granted Mar 22, 2005·10 cites·23 claims
- 1161US8148766B2Nonvolatile memory cellHUANG SHIN-BIN·Filed 2008·Granted Apr 3, 2012·2 cites·3 claims
- 1261US7005701B2Method for fabricating a vertical NROM cellNANYA TECHNOLOGY CORP·Filed 2002·Granted Feb 28, 2006·6 cites·7 claims
- 1349US7135731B2Vertical DRAM and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2003·Granted Nov 14, 2006·8 cites·14 claims
- 1447US7781804B2Non-volatile memoryNANYA TECHNOLOGY CORP·Filed 2008·Granted Aug 24, 2010·0 cites·14 claims
- 1547US7476929B2Multi-bit stacked-type non-volatile memoryNANYA TECHNOLOGY CORP·Filed 2005·Granted Jan 13, 2009·0 cites·7 claims
- 1645US7868377B2Layout and structure of memoryNANYA TECHNOLOGY CORP·Filed 2007·Granted Jan 11, 2011·0 cites·15 claims
- 1745US7855124B2Method for forming a semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2008·Granted Dec 21, 2010·0 cites·20 claims
- 1844US2008315284A1Flash memory structure and method of making the sameHSIAO CHING-NAN·Filed 2007·Application pending·0 cites
- 1943US7972924B2Method for manufacturing a memoryNANYA TECHNOLOGY CORP·Filed 2010·Granted Jul 5, 2011·0 cites·4 claims
- 2043US7642191B2Method of forming semiconductor structureNANYA TECHNOLOGY CORP·Filed 2008·Granted Jan 5, 2010·0 cites·9 claims
- 2143US7576381B2Memory structure and fabricating method thereofNANYA TECHNOLOGY CORP·Filed 2007·Granted Aug 18, 2009·0 cites·20 claims
- 2243US2008283895A1Memory structure and fabricating method thereofNANYA TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 2342US7713820B2Method for manufacturing non-volatile memoryNANYA TECHNOLOGY CORP·Filed 2007·Granted May 11, 2010·0 cites·30 claims
- 2442US7714445B2Dynamic random access memory with an electrostatic discharge structure and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2007·Granted May 11, 2010·0 cites·7 claims
- 2542US2008296725A1Semiconductor component and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 2642US2009047765A1Method of manufacturing non-volatile memoryNANYA TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 2740US7981743B2Method of fabricating a memory cellNANYA TECHNOLOGY CORP·Filed 2008·Granted Jul 19, 2011·0 cites·7 claims
- 2840US7482227B1Method for manufacturing a flash memoryNANYA TECHNOLOGY CORP·Filed 2007·Granted Jan 27, 2009·0 cites·9 claims
- 2940US6995061B2Multi-bit stacked-type non-volatile memory and manufacture method thereofNANYA TECHNOLOGY CORP·Filed 2004·Granted Feb 7, 2006·0 cites·20 claims
- 3040US2009065846A1Non-volatile memory and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 3140US2009040823A1Flash memoryHUANG SHIN-BIN·Filed 2007·Application pending·0 cites
- 3238US2006088967A1Finfet transistor processNANYA TECHNOLOGY CORP·Filed 2005·Application pending·0 cites
- 3338US2005087823A1Read-only memory cell and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2004·Application pending·0 cites
- 3437US2004262673A1Read-only memory cell and fabrication method thereofFiled 2004·Application pending·0 cites
- 3536US8105900B2Manufacturing method of non-volatile memoryTSAI HUNG-MINE·Filed 2010·Granted Jan 31, 2012·0 cites·6 claims
- 3635US8330198B2Device for preventing current-leakageHUANG SHIN BIN·Filed 2010·Granted Dec 11, 2012·0 cites·10 claims
- 3735US2008283897A1Flash memory device and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 3835US2011086490A1Single-side implanting process for capacitors of stack dramINOTERA MEMORIES INC·Filed 2010·Application pending·0 cites
- 3932US2005032308A1Multi-bit vertical memory cell and method of fabricating the sameFiled 2004·Application pending·0 cites
- 4032US2009032860A1Programmable memory, programmable memory cell and the manufacturing method thereofCHEN MAO-QUAN·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →