Inventor · disambiguated record

Chia-Ta Hsieh

Also filed as: HSIEH CHIA-TA

151 granted patents·18 pending applications·2,899 citations·filing 1997–2025

99Inventor score

Technology areasH10D H10B H10W G11C G06F

Files withTAIWAN SEMICONDUCTOR MFG128 TAIWAN SEMICONDUCTOR MFG CO LTD27 WISTRON CORP10 HSIEH CHIA-TA2 HUNG CHIH-WEI1

Top patents by PatentIndex Score

169 records

0198US7910453B2Storage nitride encapsulation for non-planar sonos NAND flash charge retentionTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Mar 22, 2011·396 cites·18 claims
0297US11289330B2Semiconductor-on-insulator (SOI) substrate and method for formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·20 claims
0396US11705328B2Semiconductor-on-insulator (SOI) substrate and method for formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 18, 2023·3 cites·20 claims
0496US8243527B2Non-volatile field programmable gate arrayHUNG CHIH-WEI·Filed 2011·Granted Aug 14, 2012·58 cites·20 claims
0593US6818512B1Split-gate flash with source/drain multi-sharingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 16, 2004·70 cites·10 claims
0693US6159801AMethod to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 12, 2000·84 cites·33 claims
0792US6403494B1Method of forming a floating gate self-aligned to STI on EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 11, 2002·55 cites·13 claims
0891US9287282B2Method of forming a logic compatible flash memoryTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 15, 2016·11 cites·20 claims
0991US6933555B2Flash EEPROM with function bit by bit erasingTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 23, 2005·37 cites·16 claims
1091US6649472B1Method of manufacturing a flash memory cell with high programming efficiency by coupling from floating gate to sidewallTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 18, 2003·41 cites·13 claims
1191US6645813B1Flash EEPROM with function bit by bit erasingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 11, 2003·40 cites·22 claims
1291US6380583B1Method to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·46 cites·6 claims
1391US6312989B1Structure with protruding source in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 6, 2001·43 cites·20 claims
1491US2025357115A1Semiconductor-on-insulator (soi) substrate and method for formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1590US6228695B1Method to fabricate split-gate with self-aligned source and self-aligned floating gate to control gateTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·76 cites·25 claims
1690US6204126B1Method to fabricate a new structure with multi-self-aligned for split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 20, 2001·56 cites·20 claims
1789US6117733APoly tip formation and self-align source process for split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 12, 2000·85 cites·32 claims
1887US12456618B2Semiconductor-on-insulator (SOI) substrate and method for formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
1987US8325521B2Structure and inhibited operation of flash memory with split gateHSIEH CHIA-TA·Filed 2010·Granted Dec 4, 2012·13 cites·20 claims
2087US7205602B2Method to improve the coupling ratio of top gate to floating gate in flashTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 17, 2007·11 cites·9 claims
2186US6724036B1Stacked-gate flash memory cell with folding gate and increased coupling ratioTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 20, 2004·40 cites·4 claims
2285US6153494AMethod to increase the coupling ratio of word line to floating gate by lateral coupling in stacked-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 28, 2000·70 cites·28 claims
2384US6465836B2Vertical split gate field effect transistor (FET) deviceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 15, 2002·40 cites·6 claims
2483US9947678B2Wing-type projection between neighboring access transistors in memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 17, 2018·4 cites·20 claims
2583US6593187B1Method to fabricate a square poly spacer in flashTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 15, 2003·33 cites·49 claims
2683US6417049B1Split gate flash cell for multiple storageTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 9, 2002·28 cites·5 claims
2783US6214662B1Forming self-align source line for memory arrayTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 10, 2001·27 cites·48 claims
2882US7153755B2Process to improve programming of memory cellsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 26, 2006·12 cites·16 claims
2982US6358796B1Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolationTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 19, 2002·46 cites·24 claims
3082US6284596B1Method of forming split-gate flash cell for salicide and self-align contactTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 4, 2001·39 cites·33 claims
3181US12310027B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
3281US12062539B2Semiconductor-on-insulator (SOI) substrate and method for formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
3381US9437603B2Wing-type projection between neighboring access transistors in memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 6, 2016·5 cites·19 claims
3481US6441429B1Split-gate flash memory device having floating gate electrode with sharp peakTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 27, 2002·24 cites·10 claims
3580US6017795AMethod of fabricating buried source to shrink cell dimension and increase coupling ratio in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jan 25, 2000·37 cites·29 claims
3680US2025267873A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3779US6538277B2Split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 25, 2003·23 cites·5 claims
3879US6468863B2Split gate field effect transistor (FET) device employing dielectric barrier layer and method for fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 22, 2002·31 cites·9 claims
3979US6229176B1Split gate flash with step poly to improve program speedTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·37 cites·8 claims
4079US5858840AMethod of forming sharp beak of poly by nitrogen implant to improve erase speed for split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 12, 1999·37 cites·12 claims
4178US6784039B2Method to form self-aligned split gate flash with L-shaped wordline spacersTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 31, 2004·18 cites·20 claims
4278US6579761B1Method to improve the coupling ratio of top gate to floating gate in flashTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 17, 2003·19 cites·29 claims
4378US6559501B2Method for forming split-gate flash cell for salicide and self-align contactTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 6, 2003·16 cites·7 claims
4478US6127229AProcess of forming an EEPROM device having a split gateTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 3, 2000·36 cites·10 claims
4578US5879992AMethod of fabricating step poly to improve program speed in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 9, 1999·38 cites·22 claims
4677US12349344B2Semiconductor device and method of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
4777US9285928B2Touch detection method and related optical touch systemWISTRON CORP·Filed 2014·Granted Mar 15, 2016·4 cites·20 claims
4877US7297598B2Process for erase improvement in a non-volatile memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 20, 2007·7 cites·11 claims
4977US6297099B1Method to free control tunneling oxide thickness on poly tip of flashTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 2, 2001·24 cites·23 claims
5076US11855201B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims

Showing the top 50 of 169 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →