Inventor · disambiguated record
Chuang-Han Hsieh
Also filed as: HSIEH CHUANG-HAN
6 granted patents·8 pending applications·9 citations·filing 2011–2025
72Inventor score
Top patents by PatentIndex Score
14 records- 0189US12396195B2High electron mobility transistor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 19, 2025·1 cites·7 claims
- 0283US8860224B2Preventing the cracking of passivation layers on ultra-thick metalsCHEN YU-WEN·Filed 2011·Granted Oct 14, 2014·8 cites·18 claims
- 0378US2025344431A1Manufacturing method of high electron mobility transistor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 0477US2024413199A1Method for forming air gap between gate dielectric layer and spacerUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0577US2024413200A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0672US2025248059A1Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 0770US12107121B2Method for forming air gap between gate dielectric layer and spacerUNITED MICROELECTRONICS CORP·Filed 2021·Granted Oct 1, 2024·0 cites·5 claims
- 0867US2025194130A1High electron mobility transistor and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 0966US2024047554A1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 1065US2024021702A1High electron mobility transistor and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 1156US11764174B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2021·Granted Sep 19, 2023·0 cites·20 claims
- 1253US10629734B2Fabricating method of fin structure with tensile stress and complementary FinFET structureUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 21, 2020·0 cites·5 claims
- 1346US10229995B2Fabricating method of fin structure with tensile stress and complementary FinFET structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Mar 12, 2019·0 cites·5 claims
- 1431US2018358453A1Tunneling field effect transistorUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →