Inventor · disambiguated record
Ching-Pei Hsieh
Also filed as: HSIEH CHING-PEI
28 granted patents·267 citations·filing 2013–2024
96Inventor score
Top patents by PatentIndex Score
28 records- 0199US9431603B1RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·61 cites·20 claims
- 0298US9653682B1Resistive random access memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·22 cites·20 claims
- 0398US8963114B2One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 24, 2015·32 cites·11 claims
- 0498US8872149B1RRAM structure and process using composite spacerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 28, 2014·61 cites·20 claims
- 0596US9853091B2Side bottom contact RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 26, 2017·16 cites·20 claims
- 0696US9099647B2One transistor and one resistive (1T1R) random access memory (RAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Aug 4, 2015·16 cites·20 claims
- 0796US9040951B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 26, 2015·13 cites·16 claims
- 0895US12020933B2Trench etching process for photoresist line roughness improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·2 cites·20 claims
- 0992US11527406B2Trench etching process for photoresist line roughness improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·3 cites·12 claims
- 1091US9837605B2Memory cell having resistance variable film and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 5, 2017·6 cites·23 claims
- 1190US9466794B2Low form voltage resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 11, 2016·6 cites·20 claims
- 1290US9231205B2Low form voltage resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·6 cites·18 claims
- 1389US10158069B2Memory cell having resistance variable film and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·4 cites·20 claims
- 1488US10164184B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·3 cites·20 claims
- 1587US10158073B2Manufacturing method of semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·4 cites·20 claims
- 1687US9620582B2Metal-insulator-metal (MIM) capacitors and forming methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·5 cites·20 claims
- 1786US12463035B2Trench etching process for photoresist line roughness improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 1876US10516107B2Memory cell having resistance variable film and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·1 cites·20 claims
- 1976US10483322B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·2 cites·20 claims
- 2075US9825224B2RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·3 cites·20 claims
- 2171US10957852B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 23, 2021·0 cites·20 claims
- 2269US10164183B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·1 cites·20 claims
- 2365US11018299B2Memory cell having resistance variable film and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·0 cites·20 claims
- 2464US10629811B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·20 claims
- 2558US9837606B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·0 cites·20 claims
- 2656US9419218B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 16, 2016·0 cites·20 claims
- 2748US9299927B2Memory cell having resistance variable film and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 29, 2016·0 cites·21 claims
- 2844US9406883B1Structure and formation method of memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 2, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →