Inventor · disambiguated record
Chang-Po Hsiung
Also filed as: HSIUNG CHANG-PO
17 granted patents·4 pending applications·29 citations·filing 2014–2025
90Inventor score
Files withUNITED MICROELECTRONICS CORP21
Top patents by PatentIndex Score
21 records- 0194US12310083B2Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted May 20, 2025·2 cites·20 claims
- 0293US10276710B1High voltage transistor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 30, 2019·12 cites·20 claims
- 0392US11682726B2High voltage semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jun 20, 2023·2 cites·10 claims
- 0490US11495681B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2020·Granted Nov 8, 2022·2 cites·16 claims
- 0586US9577069B1Method of fabricating semiconductor MOS deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Feb 21, 2017·5 cites·12 claims
- 0683US9972678B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 15, 2018·3 cites·17 claims
- 0780US10411088B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Sep 10, 2019·2 cites·19 claims
- 0879US2025031438A1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0978US12206020B2High voltage semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jan 21, 2025·0 cites·9 claims
- 1077US12426353B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2023·Granted Sep 23, 2025·0 cites·8 claims
- 1177US12080794B2Manufacturing method of high voltage semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Granted Sep 3, 2024·0 cites·9 claims
- 1272US2025241045A1Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1368US11735586B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2021·Granted Aug 22, 2023·0 cites·25 claims
- 1463US9472661B1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Oct 18, 2016·1 cites·16 claims
- 1556US10475903B2Method of forming transistor with dual spacerUNITED MICROELECTRONICS CORP·Filed 2019·Granted Nov 12, 2019·0 cites·10 claims
- 1654US11437512B2Buried channel metal-oxide-semiconductor field-effect transistor (MOSFET) and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 1753US10453938B2Transistor with dual spacer and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 22, 2019·0 cites·7 claims
- 1850US11217693B2Semiconductor transistor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jan 4, 2022·0 cites·17 claims
- 1945US9653343B1Method of manufacturing semiconductor device with shallow trench isolation (STI) having edge profileUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 16, 2017·0 cites·10 claims
- 2040US2016133635A1Flash cell and flash cell setUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2135US2019103460A1Semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →