Inventor · disambiguated record
Chih-Wen Hsiung
Also filed as: HSIUNG CHIH-WEN
44 granted patents·9 pending applications·104 citations·filing 2005–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD20RICHTEK TECHNOLOGY CORP12TAIWAN SEMICONDUCTOR MFG8MEDIATEK INC3HSIUNG CHIH-WEN2
Top patents by PatentIndex Score
53 records- 0193US8895993B2Low gate-leakage structure and method for gallium nitride enhancement mode transistorKALNITSKY ALEXANDER·Filed 2011·Granted Nov 25, 2014·15 cites·11 claims
- 0290US9887302B2Schottky barrier diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 6, 2018·6 cites·20 claims
- 0389US10199496B2Semiconductor device capable of high-voltage operationMEDIATEK INC·Filed 2017·Granted Feb 5, 2019·6 cites·16 claims
- 0489US10002955B2High-electron-mobility transistor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 19, 2018·4 cites·20 claims
- 0589US8901609B1Transistor having doped substrate and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·12 cites·20 claims
- 0689US8680535B2High electron mobility transistor structure with improved breakdown voltage performanceYao fu-wei·Filed 2012·Granted Mar 25, 2014·7 cites·20 claims
- 0789US7375365B2Multilevel phase-change memory, manufacture method and operating method thereofIND TECH RES INST·Filed 2005·Granted May 20, 2008·21 cites·9 claims
- 0888US10056478B2High-electron-mobility transistor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 21, 2018·4 cites·20 claims
- 0986US9147743B2High electron mobility transistor structure with improved breakdown voltage performanceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 29, 2015·4 cites·20 claims
- 1085US9343542B2Method for fabricating enhancement mode transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 17, 2016·5 cites·19 claims
- 1179US8946771B2Gallium nitride semiconductor devices and method making thereofHSIUNG CHIH-WEN·Filed 2011·Granted Feb 3, 2015·7 cites·17 claims
- 1279US8841703B2High electron mobility transistor and method of forming the sameWONG KING-YUEN·Filed 2011·Granted Sep 23, 2014·4 cites·20 claims
- 1374US12272592B2High voltage device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2024·Granted Apr 8, 2025·0 cites·11 claims
- 1473US9184259B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 10, 2015·2 cites·20 claims
- 1572US8921893B2Circuit structure having islands between source and drainYU CHEN-JU·Filed 2011·Granted Dec 30, 2014·2 cites·19 claims
- 1671US9583588B2Method of making high electron mobility transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·1 cites·20 claims
- 1771US2023197730A1High voltage cmos device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2022·Application pending·0 cites
- 1871US2025248115A1High voltage cmos device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 1968US9502524B2Compound semiconductor device having gallium nitride gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·1 cites·20 claims
- 2066US10522630B2High electron mobility transistor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·0 cites·20 claims
- 2164US10868135B2High electron mobility transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 2264US8884334B2Composite layer stacking for enhancement mode transistorTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 11, 2014·1 cites·21 claims
- 2363US12062570B2High voltage device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2021·Granted Aug 13, 2024·0 cites·11 claims
- 2463US11011380B2High-electron-mobility transistor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 18, 2021·0 cites·20 claims
- 2563US10879389B2Semiconductor device capable of high-voltage operationMEDIATEK INC·Filed 2019·Granted Dec 29, 2020·0 cites·21 claims
- 2662US10811261B2Manufacturing method for high-electron-mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 20, 2020·0 cites·20 claims
- 2762US10283599B2High electron mobility transistor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·0 cites·20 claims
- 2862US9018677B2Semiconductor structure and method of forming the sameYao fu-wei·Filed 2011·Granted Apr 28, 2015·1 cites·20 claims
- 2961US8860088B2Semiconductor structure and method of forming the sameYU CHEN-JU·Filed 2012·Granted Oct 14, 2014·1 cites·20 claims
- 3060US10541328B2Semiconductor device capable of high-voltage operationMEDIATEK INC·Filed 2018·Granted Jan 21, 2020·0 cites·21 claims
- 3160US10164047B2High electron mobility transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 3260US9385225B2Method of making a circuit structure having islands between source and drainTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 5, 2016·0 cites·20 claims
- 3358US9728613B2High electron mobility transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·0 cites·20 claims
- 3457US10020361B2Circuit structure having islands between source and drain and circuit formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 10, 2018·0 cites·20 claims
- 3557US8884308B2High electron mobility transistor structure with improved breakdown voltage performanceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 11, 2014·0 cites·20 claims
- 3656US10115813B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 30, 2018·0 cites·19 claims
- 3756US9748372B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 29, 2017·0 cites·20 claims
- 3856US9425300B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·0 cites·20 claims
- 3956US2023197725A1Integrated structure of complementary metal-oxide-semiconductor devices and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2022·Application pending·0 cites
- 4055US12408371B2NMOS half-bridge power device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2022·Granted Sep 2, 2025·0 cites·22 claims
- 4154US12349448B2Integration manufacturing method of depletion high voltage NMOS device and depletion low voltage NMOS deviceRICHTEK TECHNOLOGY CORP·Filed 2022·Granted Jul 1, 2025·0 cites·12 claims
- 4254US9048174B2Compound semiconductor device having gallium nitride gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 2, 2015·0 cites·20 claims
- 4352US12136650B2High voltage device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2022·Granted Nov 5, 2024·0 cites·12 claims
- 4451US2023170262A1Integration manufacturing method of high voltage device and low voltage deviceRICHTEK TECHNOLOGY CORP·Filed 2022·Application pending·0 cites
- 4550US9502585B2Schottky barrier diode and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·0 cites·18 claims
- 4648US2022223733A1High Voltage Device, High Voltage Control Device and Manufacturing Methods ThereofRICHTEK TECHNOLOGY CORP·Filed 2021·Application pending·0 cites
- 4748US2022157982A1High voltage device of switching power supply circuit and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2021·Application pending·0 cites
- 4846US2021074851A1High voltage device and manufacturing method thereofRICHTEK TECHNOLOGY CORP·Filed 2020·Application pending·0 cites
- 4944US9455341B2Transistor having a back-barrier layer and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 27, 2016·0 cites·20 claims
- 5041US9806158B2HEMT-compatible lateral rectifier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 31, 2017·0 cites·20 claims
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →