Inventor · disambiguated record
Chung-Wei Hsu
Also filed as: HSU CHUNG-WEI
102 granted patents·54 pending applications·175 citations·filing 2001–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD135ADVANCED SEMICONDUCTOR ENG6WINBOND ELECTRONICS CORP4ASML MASKTOOLS BV2MEDIATEK INC2
Top patents by PatentIndex Score
156 records- 0199US11615962B2Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·6 cites·20 claims
- 0299US11502168B2Tuning threshold voltage in nanosheet transitor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·7 cites·20 claims
- 0399US11450664B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·5 cites·20 claims
- 0499US11387346B2Gate patterning process for multi-gate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·11 cites·20 claims
- 0598US11710667B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 25, 2023·5 cites·20 claims
- 0698US11600533B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·4 cites·20 claims
- 0798US11257815B2Work function design to increase density of nanosheet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·4 cites·20 claims
- 0898US11145734B1Semiconductor device with dummy fin and liner and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·7 cites·20 claims
- 0997US12119391B2Fin-based semiconductor device structure including self-aligned contacts and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 15, 2024·2 cites·20 claims
- 1097US11996334B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 1197US11961840B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
- 1296US12170231B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 17, 2024·2 cites·20 claims
- 1396US12107131B2Gate-all-around devices having self-aligned capping between channel and backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·2 cites·20 claims
- 1496US11862633B2Work function design to increase density of nanosheet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 1595US12087772B2Nanosheet device architecture for cell-height scalingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·2 cites·20 claims
- 1695US12062693B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 13, 2024·2 cites·20 claims
- 1795US11894367B2Integrated circuit including dipole incorporation for threshold voltage tuning in transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 1895US11791218B2Dipole patterning for CMOS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·3 cites·18 claims
- 1995US11594614B2P-metal gate first gate replacement process for multigate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·3 cites·20 claims
- 2094US11728401B2Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 2194US10937704B1Mixed workfunction metal for nanosheet deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·8 cites·20 claims
- 2293US11894460B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·19 claims
- 2393US11563109B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·2 cites·20 claims
- 2493US11205650B2Input/output semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 21, 2021·6 cites·20 claims
- 2592US11670692B2Gate-all-around devices having self-aligned capping between channel and backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
- 2691US11862525B2Semiconductor device package and a method of manufacturing the sameADVANCED SEMICONDUCTOR ENG·Filed 2022·Granted Jan 2, 2024·1 cites·20 claims
- 2791US11374105B2Nanosheet device with dipole dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·2 cites·20 claims
- 2891US11004794B2Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·5 cites·20 claims
- 2990US2025359115A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3089US11948987B2Self-aligned backside source contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 2, 2024·2 cites·20 claims
- 3189US10867867B2Methods of fabricating semiconductor devices with mixed threshold voltages boundary isolation of multiple gates and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·3 cites·20 claims
- 3289US9059391B2Self-rectifying RRAM cell structure and 3D crossbar array architecture thereofWINBOND ELECTRONICS CORP·Filed 2013·Granted Jun 16, 2015·9 cites·18 claims
- 3389US2025324753A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3487US12477766B2Semiconductor transistor device structure including nanostructure and gate structure with protection layer and fill layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 3587US12396248B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 3687US12389675B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·18 claims
- 3787US11869955B2Integrated circuit with nanosheet transistors with robust gate oxideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 9, 2024·1 cites·20 claims
- 3887US11676866B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·1 cites·20 claims
- 3987US2025331286A1Semiconductor Device Fabrication Methods And Structures ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4086US12261089B2Semiconductor device package and a method of manufacturing the sameADVANCED SEMICONDUCTOR ENG·Filed 2024·Granted Mar 25, 2025·0 cites·13 claims
- 4186US11120995B2Method for forming multi-layer maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·3 cites·20 claims
- 4285US11670723B2Silicon channel temperingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·1 cites·20 claims
- 4385US2025309119A1Partial Barrier Free Vias for Cobalt-Based Interconnects and Methods of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4485US2024387687A1Nanosheet device with dipole dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4584US12507474B2Input/output semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·20 claims
- 4684US12166100B2Nanosheet device with dipole dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 4784US12148750B2Work function design to increase density of nanosheet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 4884US11024545B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·2 cites·20 claims
- 4984US2025324636A1Device having a gate electrode wrapping around semiconductor layers and proximate to a dielectric finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5084US2025316495A1Nanostructure Field-Effect Transistor Device and Method of FormingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 156 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →