Inventor · disambiguated record
Ching-Hsiang Hsu
Also filed as: HSU CHING · HSU CHING-HSIANG
151 granted patents·42 pending applications·3,972 citations·filing 1992–2025
99Inventor score
Files withEMEMORY TECHNOLOGY INC57TAIWAN SEMICONDUCTOR MFG26TAIWAN SEMICONDUCTOR MFG CO LTD17GENMONT BIOTECH INC10UNITED MICROELECTRONICS CORP9
Top patents by PatentIndex Score
193 records- 0198US6678190B2Single poly embedded epromEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jan 13, 2004·138 cites·12 claims
- 0297US7903472B2Operating method of non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2009·Granted Mar 8, 2011·40 cites·10 claims
- 0397US7250654B2Non-volatile memory deviceEMEMORY TECHNOLOGY INC·Filed 2005·Granted Jul 31, 2007·48 cites·29 claims
- 0496US11782338B2EUV photomask and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·2 cites·20 claims
- 0596US5714412AMulti-level, split-gate, flash memory cell and method of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Feb 3, 1998·137 cites·13 claims
- 0696US5567635AMethod of making a three dimensional trench EEPROM cell structureIBM·Filed 1994·Granted Oct 22, 1996·172 cites·11 claims
- 0795US11562118B2Hard-to-fix (HTF) design rule check (DRC) violations predictionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·3 cites·20 claims
- 0895US6666422B1Foldable hinge bracket for a laptop computerSHIN ZU SHING CO LTD·Filed 2002·Granted Dec 23, 2003·107 cites·2 claims
- 0995US6418060B1Method of programming and erasing non-volatile memory cellsEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jul 9, 2002·101 cites·20 claims
- 1095US5851881AMethod of making monos flash memory for multi-level logicTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Dec 22, 1998·140 cites·11 claims
- 1195US5679591AMethod of making raised-bitline contactless trenched flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Oct 21, 1997·120 cites·15 claims
- 1295US5315142AHigh performance trench EEPROM cellIBM·Filed 1992·Granted May 24, 1994·154 cites·12 claims
- 1394US11307489B2EUV photomask and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 19, 2022·4 cites·20 claims
- 1494US7172940B1Method of fabricating an embedded non-volatile memory deviceEMEMORY TECHNOLOGY INC·Filed 2005·Granted Feb 6, 2007·39 cites·7 claims
- 1594US6429081B1Parasitic surface transfer transistor cell (PASTT cell) for bi-level and multi-level NAND flash memoryTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 6, 2002·79 cites·20 claims
- 1694US5877523AMulti-level split- gate flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Mar 2, 1999·114 cites·3 claims
- 1793US11928415B2Hard-to-fix (HTF) design rule check (DRC) violations predictionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 12, 2024·1 cites·20 claims
- 1893US11287745B2Reticle-masking structure, extreme ultraviolet apparatus, and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 1993US7001756B1Microorganism strain of GM-020 of Lactobacillus rhamnosus and its use for treating obesityGENMONT BIOTECH INC·Filed 2004·Granted Feb 21, 2006·45 cites·9 claims
- 2092US10866519B1Reticle-masking structure, extreme ultraviolet apparatus, and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·3 cites·20 claims
- 2192US6920067B2Integrated circuit embedded with single-poly non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jul 19, 2005·69 cites·18 claims
- 2291US10839872B2Random bit cell using an initial state of a latch to generate a random bitEMEMORY TECHNOLOGY INC·Filed 2019·Granted Nov 17, 2020·5 cites·20 claims
- 2391US6914525B2Alert system and method for geographic or natural disasters utilizing a telecommunications networkFAR EASTONE TELECOMM CO LTD·Filed 2002·Granted Jul 5, 2005·122 cites·29 claims
- 2491US6489202B1Structure of an embedded channel write-erase flash memory cell and fabricating method thereofEMEMORY TECHNOLOGY INC·Filed 2001·Granted Dec 3, 2002·44 cites·20 claims
- 2591US6281545B1Multi-level, split-gate, flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 28, 2001·98 cites·13 claims
- 2691US5331188ANon-volatile DRAM cellIBM·Filed 1992·Granted Jul 19, 1994·84 cites·34 claims
- 2790US10181357B2Code generating apparatus and one time programming blockEMEMORY TECHNOLOGY INC·Filed 2016·Granted Jan 15, 2019·6 cites·2 claims
- 2890US6757940B2Hinge for a notebook computerSHIN ZU SHING CO LTD·Filed 2002·Granted Jul 6, 2004·64 cites·9 claims
- 2990US6617637B1Electrically erasable programmable logic deviceEMEMORY TECHNOLOGY INC·Filed 2002·Granted Sep 9, 2003·57 cites·33 claims
- 3090US5521105AMethod of forming counter-doped island in power MOSFETUNITED MICROELECTRONICS CORP·Filed 1994·Granted May 28, 1996·119 cites·8 claims
- 3189US6501685B2Channel write/erase flash memory cell and its manufacturing methodEMEMORY TECHNOLOGY INC·Filed 2002·Granted Dec 31, 2002·43 cites·15 claims
- 3289US5231299AStructure and fabrication method for EEPROM memory cell with selective channel implantsIBM·Filed 1992·Granted Jul 27, 1993·78 cites·12 claims
- 3388US7447082B2Method for operating single-poly non-volatile memory deviceEMEMORY TECHNOLOGY INC·Filed 2006·Granted Nov 4, 2008·10 cites·8 claims
- 3488US7190623B2Non-volatile memory cell and method of operating the sameEMEMORY TECHNOLOGY INC·Filed 2005·Granted Mar 13, 2007·16 cites·29 claims
- 3588US6448607B1Nonvolatile memory having embedded word linesEMEMORY TECHNOLOGY INC·Filed 2001·Granted Sep 10, 2002·42 cites·12 claims
- 3688US6441443B1Embedded type flash memory structure and method for operating the sameEMEMORY TECHNOLOGY INC·Filed 2001·Granted Aug 27, 2002·48 cites·7 claims
- 3788US5804858ABody contacted SOI MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Sep 8, 1998·65 cites·6 claims
- 3887US6259618B1Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startupANALOG AND POWER ELECTRONICS C·Filed 2000·Granted Jul 10, 2001·41 cites·4 claims
- 3987US5966329AApparatus and method for programming PMOS memory cellsPROGRAMMABLE MICROELECTRONICS·Filed 1997·Granted Oct 12, 1999·67 cites·17 claims
- 4087US5573961AMethod of making a body contact for a MOSFET device fabricated in an SOI layerTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Nov 12, 1996·66 cites·26 claims
- 4186US10020268B2Random number generator device and control method thereofEMEMORY TECHNOLOGY INC·Filed 2017·Granted Jul 10, 2018·5 cites·9 claims
- 4286US9518327B2Metal stripping additive, composition containing the same, and method for stripping metal by using the compositionUWIN NANOTECH CO LTD·Filed 2015·Granted Dec 13, 2016·3 cites·6 claims
- 4385US12235573B2EUV photomask and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 4485US6888190B2EEPROM with source line voltage stabilization mechanismEMEMORY TECHNOLOGY INC·Filed 2003·Granted May 3, 2005·36 cites·15 claims
- 4585US6518126B2Method of forming and operating trench split gate non-volatile flash memory cell structureEMEMORY TECHNOLOGY INC·Filed 2002·Granted Feb 11, 2003·36 cites·5 claims
- 4685US5591650AMethod of making a body contacted SOI MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Jan 7, 1997·55 cites·23 claims
- 4784US7262457B2Non-volatile memory cellEMEMORY TECHNOLOGY INC·Filed 2004·Granted Aug 28, 2007·33 cites·5 claims
- 4884US6801456B1Method for programming, erasing and reading a flash memory cellEMEMORY TECHNOLOGY INC·Filed 2003·Granted Oct 5, 2004·35 cites·15 claims
- 4984US6383525B1Herbal compositions for treating immunological disordersGLOBOASIA L L C·Filed 2000·Granted May 7, 2002·20 cites·24 claims
- 5084US5818085ABody contact for a MOSFET device fabricated in an SOI layerTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 6, 1998·53 cites·3 claims
Showing the top 50 of 193 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →