Inventor · disambiguated record
Chenming Hu
Also filed as: HU CHENMING
165 granted patents·32 pending applications·10,160 citations·filing 1980–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG108TAIWAN SEMICONDUCTOR MFG CO LTD21UNIV CALIFORNIA18ACTEL CORP7YEO YEE-CHIA5
Top patents by PatentIndex Score
197 records- 0199US6855990B2Strained-channel multiple-gate transistorTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 15, 2005·272 cites·42 claims
- 0299US6492216B1Method of forming a transistor with a strained channelTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 10, 2002·452 cites·32 claims
- 0398US7452778B2Semiconductor nano-wire devices and methods of fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 18, 2008·104 cites·21 claims
- 0498US7442967B2Strained channel complementary field-effect transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 28, 2008·91 cites·7 claims
- 0598US7112495B2Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 26, 2006·270 cites·71 claims
- 0698US6867433B2Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 15, 2005·321 cites·69 claims
- 0798US6855606B2Semiconductor nano-rod devicesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 15, 2005·182 cites·12 claims
- 0898US6413802B1Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufactureUNIV CALIFORNIA·Filed 2000·Granted Jul 2, 2002·1.2k cites·28 claims
- 0998US5559368ADynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operationUNIV CALIFORNIA·Filed 1994·Granted Sep 24, 1996·307 cites·2 claims
- 1098US5489792ASilicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibilityUNIV CALIFORNIA·Filed 1994·Granted Feb 6, 1996·369 cites·13 claims
- 1198US5485031AAntifuse structure suitable for VLSI applicationACTEL CORP·Filed 1993·Granted Jan 16, 1996·330 cites·4 claims
- 1298US5448513ACapacitorless DRAM device on silicon-on-insulator substrateUNIV CALIFORNIA·Filed 1993·Granted Sep 5, 1995·361 cites·10 claims
- 1398US4794565AElectrically programmable memory device employing source side injectionUNIV CALIFORNIA·Filed 1986·Granted Dec 27, 1988·280 cites·2 claims
- 1497US8067280B2High performance CMOS devices and methods for making sameWANG CHIH-HAO·Filed 2008·Granted Nov 29, 2011·95 cites·6 claims
- 1597US7180134B2Methods and structures for planar and multiple-gate transistors formed on SOITAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 20, 2007·131 cites·10 claims
- 1697US7074656B2Doping of semiconductor fin devicesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 11, 2006·128 cites·59 claims
- 1797US7052964B2Strained channel transistor and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 30, 2006·48 cites·46 claims
- 1897US6844238B2Multiple-gate transistors with improved gate controlTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 18, 2005·135 cites·31 claims
- 1997US6794234B2Dual work function CMOS gate technology based on metal interdiffusionUNIV CALIFORNIA·Filed 2002·Granted Sep 21, 2004·124 cites·15 claims
- 2097US6720619B1Semiconductor-on-insulator chip incorporating partially-depleted, fully-depleted, and multiple-gate devicesTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 13, 2004·172 cites·16 claims
- 2197US6518105B1High performance PD SOI tunneling-biased MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Feb 11, 2003·214 cites·14 claims
- 2297US6300649B1Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibilityUNIV CALIFORNIA·Filed 2000·Granted Oct 9, 2001·154 cites·9 claims
- 2397US6121077ASilicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibilityUNIV CALIFORNIA·Filed 1999·Granted Sep 19, 2000·167 cites·4 claims
- 2497US5780899ADelta doped and counter doped dynamic threshold voltage MOSFET for ultra-low voltage operationUNIV CALIFORNIA·Filed 1995·Granted Jul 14, 1998·197 cites·4 claims
- 2596US8384122B1Tunneling transistor suitable for low voltage operationUNIV CALIFORNIA·Filed 2009·Granted Feb 26, 2013·78 cites·18 claims
- 2696US7888201B2Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 15, 2011·45 cites·20 claims
- 2796US7262086B2Contacts to semiconductor fin devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 28, 2007·34 cites·44 claims
- 2896US7183137B2Method for dicing semiconductor wafersTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 27, 2007·102 cites·15 claims
- 2996US6921913B2Strained-channel transistor structure with lattice-mismatched zoneTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 26, 2005·104 cites·32 claims
- 3096US6882025B2Strained-channel transistor and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 19, 2005·111 cites·66 claims
- 3196US5982003ASilicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibilityUNIV CALIFORNIA·Filed 1995·Granted Nov 9, 1999·162 cites·2 claims
- 3296US5511020APseudo-nonvolatile memory incorporating data refresh operationMONOLITHIC SYSTEM TECH INC·Filed 1993·Granted Apr 23, 1996·151 cites·43 claims
- 3395US7172943B2Multiple-gate transistors formed on bulk substratesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 6, 2007·91 cites·36 claims
- 3495US7105894B2Contacts to semiconductor fin devicesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 12, 2006·89 cites·13 claims
- 3595US6902965B2Strained silicon structureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 7, 2005·85 cites·23 claims
- 3695US6900502B2Strained channel on insulator deviceTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted May 31, 2005·120 cites·50 claims
- 3795US6864519B2CMOS SRAM cell configured using multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 8, 2005·96 cites·57 claims
- 3895US6027988AMethod of separating films from bulk substrates by plasma immersion ion implantationUNIV CALIFORNIA·Filed 1997·Granted Feb 22, 2000·156 cites·54 claims
- 3994US10374086B23D transistor having a gate stack including a ferroelectric filmUNIV CALIFORNIA·Filed 2016·Granted Aug 6, 2019·10 cites·29 claims
- 4094US7851276B2Methods and structures for planar and multiple-gate transistors formed on SOITAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 14, 2010·26 cites·15 claims
- 4194US7294937B2Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peelingTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 13, 2007·26 cites·30 claims
- 4294US7268024B2Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 11, 2007·80 cites·26 claims
- 4394US7238989B2Strain balanced structure with a tensile strained silicon channel and a compressive strained silicon-germanium channel for CMOS performance enhancementTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 3, 2007·31 cites·19 claims
- 4494US7214991B2CMOS inverters configured using multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 8, 2007·84 cites·50 claims
- 4594US6949769B2Suppression of MOSFET gate leakage currentTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 27, 2005·67 cites·19 claims
- 4694US6936881B2Capacitor that includes high permittivity capacitor dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 30, 2005·68 cites·90 claims
- 4793US7863674B2Multiple-gate transistors formed on bulk substratesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 4, 2011·27 cites·20 claims
- 4893US7101742B2Strained channel complementary field-effect transistors and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 5, 2006·59 cites·71 claims
- 4993US7037772B2Method of manufacturing an integrated circuit including capacitor with high permittivity capacitor dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 2, 2006·20 cites·22 claims
- 5093US6940705B2Capacitor with enhanced performance and method of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 6, 2005·62 cites·81 claims
Showing the top 50 of 197 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →