Inventor · disambiguated record
Cheng-Ying Huang
Also filed as: HUANG CHENG-YING
88 granted patents·40 pending applications·257 citations·filing 2011–2025
98Inventor score
Top patents by PatentIndex Score
128 records- 0198US11923410B2Transistor with isolation below source and drainINTEL CORP·Filed 2021·Granted Mar 5, 2024·4 cites·23 claims
- 0298US11348919B2Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approachINTEL CORP·Filed 2020·Granted May 31, 2022·5 cites·23 claims
- 0398US8609518B2Re-growing source/drain regions from un-relaxed silicon layerWANN CLEMENT HSINGJEN·Filed 2011·Granted Dec 17, 2013·178 cites·13 claims
- 0496US11996411B2Stacked forksheet transistorsINTEL CORP·Filed 2020·Granted May 28, 2024·4 cites·21 claims
- 0595US12243875B2Forksheet transistors with dielectric or conductive spineINTEL CORP·Filed 2024·Granted Mar 4, 2025·2 cites·20 claims
- 0695US12107085B2Interconnect techniques for electrically connecting source/drain regions of stacked transistorsINTEL CORP·Filed 2023·Granted Oct 1, 2024·2 cites·20 claims
- 0795US11862636B2Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approachINTEL CORP·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 0890US11923370B2Forksheet transistors with dielectric or conductive spineINTEL CORP·Filed 2020·Granted Mar 5, 2024·2 cites·20 claims
- 0990US11367722B2Stacked nanowire transistor structure with different channel geometries for stressINTEL CORP·Filed 2018·Granted Jun 21, 2022·6 cites·22 claims
- 1090US10892335B2Device isolation by fixed chargeINTEL CORP·Filed 2016·Granted Jan 12, 2021·6 cites·20 claims
- 1186US11171207B2Transistor with isolation below source and drainINTEL CORP·Filed 2017·Granted Nov 9, 2021·3 cites·20 claims
- 1284US12230635B2Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approachINTEL CORP·Filed 2023·Granted Feb 18, 2025·0 cites·26 claims
- 1383US12148806B2Stacked source-drain-gate connection and process for forming suchINTEL CORP·Filed 2024·Granted Nov 19, 2024·0 cites·20 claims
- 1483US11742346B2Interconnect techniques for electrically connecting source/drain regions of stacked transistorsINTEL CORP·Filed 2018·Granted Aug 29, 2023·3 cites·24 claims
- 1582US12388011B2Top gate recessed channel CMOS thin film transistor and methods of fabricationINTEL CORP·Filed 2023·Granted Aug 12, 2025·0 cites·18 claims
- 1682US11676966B2Stacked transistors having device strata with different channel widthsINTEL CORP·Filed 2019·Granted Jun 13, 2023·2 cites·19 claims
- 1782US11348916B2Leave-behind protective layer having secondary purposeINTEL CORP·Filed 2018·Granted May 31, 2022·3 cites·13 claims
- 1882US11328988B2Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabricationINTEL CORP·Filed 2019·Granted May 10, 2022·2 cites·17 claims
- 1981US11764263B2Gate-all-around integrated circuit structures having depopulated channel structures using multiple bottom-up oxidation approachesINTEL CORP·Filed 2019·Granted Sep 19, 2023·2 cites·11 claims
- 2081US11573798B2Stacked transistors with different gate lengths in different device strataINTEL CORP·Filed 2019·Granted Feb 7, 2023·1 cites·23 claims
- 2181US11257904B2Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)INTEL CORP·Filed 2018·Granted Feb 22, 2022·2 cites·25 claims
- 2281US11244943B2Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel materialINTEL CORP·Filed 2019·Granted Feb 8, 2022·2 cites·21 claims
- 2381US11075198B2Stacked transistor architecture having diverse fin geometryINTEL CORP·Filed 2018·Granted Jul 27, 2021·3 cites·20 claims
- 2481US10734511B2High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacerINTEL CORP·Filed 2016·Granted Aug 4, 2020·3 cites·25 claims
- 2580US12288803B2Transistor with isolation below source and drainINTEL CORP·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 2680US11469323B2Ferroelectric gate stack for band-to-band tunneling reductionINTEL CORP·Filed 2018·Granted Oct 11, 2022·2 cites·15 claims
- 2780US11335793B2Vertical tunneling field-effect transistorsINTEL CORP·Filed 2018·Granted May 17, 2022·2 cites·19 claims
- 2879US11916118B2Stacked source-drain-gate connection and process for forming suchINTEL CORP·Filed 2023·Granted Feb 27, 2024·0 cites·20 claims
- 2979US11393818B2Stacked transistors with Si PMOS and high mobility thin film transistor NMOSINTEL CORP·Filed 2018·Granted Jul 19, 2022·2 cites·24 claims
- 3078US12255137B2Sideways vias in isolation areas to contact interior layers in stacked devicesINTEL CORP·Filed 2024·Granted Mar 18, 2025·0 cites·12 claims
- 3178US12224202B2Forming an oxide volume within a finINTEL CORP·Filed 2023·Granted Feb 11, 2025·0 cites·13 claims
- 3278US11387238B2Non-silicon N-Type and P-Type stacked transistors for integrated circuit devicesINTEL CORP·Filed 2018·Granted Jul 12, 2022·2 cites·20 claims
- 3378US11276694B2Transistor structure with indium phosphide channelINTEL CORP·Filed 2018·Granted Mar 15, 2022·2 cites·20 claims
- 3478US11164974B2Channel layer formed in an art trenchINTEL CORP·Filed 2017·Granted Nov 2, 2021·2 cites·18 claims
- 3578US11164785B2Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain materialINTEL CORP·Filed 2019·Granted Nov 2, 2021·2 cites·15 claims
- 3677US11640961B2III-V source/drain in top NMOS transistors for low temperature stacked transistor contactsINTEL CORP·Filed 2018·Granted May 2, 2023·2 cites·15 claims
- 3776US2025031362A1Arrays of double-sided dram cells including capacitors on the frontside and backside of a stacked transistor structureINTEL CORP·Filed 2024·Application pending·0 cites
- 3874US11929320B2Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabricationINTEL CORP·Filed 2022·Granted Mar 12, 2024·0 cites·19 claims
- 3974US2025185363A1Forksheet transistors with dielectric or conductive spineINTEL CORP·Filed 2025·Application pending·0 cites
- 4074US2022328663A1Tunneling field effect transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 4173US11935891B2Non-silicon N-type and P-type stacked transistors for integrated circuit devicesINTEL CORP·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 4273US11929435B2Ferroelectric gate stack for band-to-band tunneling reductionINTEL CORP·Filed 2022·Granted Mar 12, 2024·0 cites·22 claims
- 4373US10651313B2Reduced transistor resistance using doped layerINTEL CORP·Filed 2016·Granted May 12, 2020·1 cites·23 claims
- 4473US2024047559A1Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up oxidation approachINTEL CORP·Filed 2023·Application pending·0 cites
- 4573US2024234422A1Stacked forksheet transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 4672US11894372B2Stacked trigate transistors with dielectric isolation and process for forming suchINTEL CORP·Filed 2023·Granted Feb 6, 2024·0 cites·20 claims
- 4772US11887988B2Thin film transistor structures with regrown source and drainINTEL CORP·Filed 2019·Granted Jan 30, 2024·1 cites·17 claims
- 4872US11616056B2Vertical diode in stacked transistor architectureINTEL CORP·Filed 2018·Granted Mar 28, 2023·1 cites·20 claims
- 4971US11862715B2Vertical tunneling field-effect transistorsINTEL CORP·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 5071US11437405B2Transistors stacked on front-end p-type transistorsINTEL CORP·Filed 2018·Granted Sep 6, 2022·1 cites·25 claims
Showing the top 50 of 128 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →