Inventor · disambiguated record
Chin-Ling Huang
Also filed as: HUANG CHIN-LING
35 granted patents·12 pending applications·65 citations·filing 2003–2025
95Inventor score
Files withNANYA TECHNOLOGY CORP43FARADAY TECH CORP1HUANG CHIN LING1NANYA TECHONOLGY CORP1WU TIEH CHIANG1
Top patents by PatentIndex Score
47 records- 0191US11521924B2Semiconductor device with fuse and anti-fuse structures and method for forming the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Dec 6, 2022·2 cites·14 claims
- 0289US11417737B2Semiconductor structure having vertical fin with oxidized sidewall and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Aug 16, 2022·2 cites·12 claims
- 0387US11121083B2Semiconductor device with fuse-detecting structureNANYA TECHNOLOGY CORP·Filed 2019·Granted Sep 14, 2021·5 cites·6 claims
- 0485US11257756B1Antifuse structureNANYA TECHNOLOGY CORP·Filed 2020·Granted Feb 22, 2022·2 cites·11 claims
- 0582US11189357B1Programmable memory deviceNANYA TECHNOLOGY CORP·Filed 2020·Granted Nov 30, 2021·1 cites·12 claims
- 0677US12514000B2Semiconductor device structure with fuse and resistor and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2023·Granted Dec 30, 2025·0 cites·13 claims
- 0777US11088078B2Semiconductor device and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2019·Granted Aug 10, 2021·2 cites·7 claims
- 0876US12408444B2Semiconductor device structure with fuse and resistor and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
- 0976US7217581B2Misalignment test structure and method thereofNANYA TECHNOLOGY CORP·Filed 2006·Granted May 15, 2007·4 cites·8 claims
- 1076US2025210480A1Semiconductor interposer structureNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 1175US2025385181A1Recess gate and interconnector structure and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1274US2025386483A1Recess gate and interconnector structure and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1373US11876045B2Method for preparing semiconductor device with copper-manganese linerNANYA TECHNOLOGY CORP·Filed 2023·Granted Jan 16, 2024·0 cites·5 claims
- 1473US11515405B2Method for fabricating semiconductor device with programmable featureNANYA TECHNOLOGY CORP·Filed 2021·Granted Nov 29, 2022·0 cites·13 claims
- 1573US2024014110A1Semiconductor interposer structureNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 1672US2025070015A1Semiconductor die stucture with air gaps and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 1770US11705394B2Semiconductor device with fuse and anti-fuse structuresNANYA TECHNOLOGY CORP·Filed 2022·Granted Jul 18, 2023·0 cites·8 claims
- 1870US11588029B2Method of manufacturing semiconductor structure having vertical fin with oxidized sidewallNANYA TECHNOLOGY CORP·Filed 2021·Granted Feb 21, 2023·0 cites·8 claims
- 1970US7026647B2Device and method for detecting alignment of active areas and memory cell structures in DRAM devicesNANYA TECHNOLOGY CORP·Filed 2003·Granted Apr 11, 2006·11 cites·4 claims
- 2070US2024347453A1Semiconductor device with assisting layer and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 2170US2024014109A1Semiconductor interposer structureNANYA TECHNOLOGY CORP·Filed 2022·Application pending·0 cites
- 2270US2025070014A1Semiconductor die stucture with air gaps and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 2369US11735520B2Method for fabricating semiconductor device with programmable anti-fuse featureNANYA TECHNOLOGY CORP·Filed 2021·Granted Aug 22, 2023·0 cites·4 claims
- 2469US6902942B2Device and method for detecting alignment of deep trench capacitors and word lines in DRAM devicesNANYA TECHNOLOGY CORP·Filed 2003·Granted Jun 7, 2005·12 cites·12 claims
- 2569US2024347450A1Semiconductor device with assisting layer and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 2668US11658115B2Semiconductor device with copper-manganese liner and method for forming the sameNANYA TECHNOLOGY CORP·Filed 2021·Granted May 23, 2023·0 cites·7 claims
- 2767US11670389B2Programmable memory deviceNANYA TECHNOLOGY CORP·Filed 2021·Granted Jun 6, 2023·0 cites·13 claims
- 2867US7381575B2Device and method for detecting alignment of active areas and memory cell structures in DRAM devicesNANYA TECHNOLOGY CORP·Filed 2005·Granted Jun 3, 2008·2 cites·3 claims
- 2967US6891216B1Test structure of DRAMNANYA TECHNOLOGY CORP·Filed 2003·Granted May 10, 2005·11 cites·13 claims
- 3066US11575016B2Method for fabricating a semiconductor device with a programmable contactNANYA TECHNOLOGY CORP·Filed 2021·Granted Feb 7, 2023·0 cites·6 claims
- 3165US11424346B2Semiconductor device with programmable feature and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Aug 23, 2022·0 cites·12 claims
- 3265US11081562B2Semiconductor device with a programmable contact and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Aug 3, 2021·0 cites·11 claims
- 3364US11189565B2Semiconductor device with programmable anti-fuse feature and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Nov 30, 2021·0 cites·14 claims
- 3458US11610840B2Semiconductor device with air gaps between adjacent conductive linesNANYA TECHNOLOGY CORP·Filed 2020·Granted Mar 21, 2023·0 cites·20 claims
- 3554US11670587B2Semiconductor device with copper-manganese liner and method for forming the sameNANYA TECHNOLOGY CORP·Filed 2021·Granted Jun 6, 2023·0 cites·15 claims
- 3654US10854545B1Anti-fuse structureNANYA TECHNOLOGY CORP·Filed 2019·Granted Dec 1, 2020·0 cites·16 claims
- 3753US11244950B1Method for preparing a memory deviceNANYA TECHNOLOGY CORP·Filed 2020·Granted Feb 8, 2022·0 cites·16 claims
- 3852US6875654B2Memory device and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2003·Granted Apr 5, 2005·4 cites·7 claims
- 3951US7015050B2Misalignment test structure and method thereofNANYA TECHONOLGY CORP·Filed 2003·Granted Mar 21, 2006·4 cites·12 claims
- 4043US2021384202A1Semiconductor structure and method of forming the sameNANYA TECHNOLOGY CORP·Filed 2020·Application pending·0 cites
- 4143US2010049947A1Processor and early-load method thereofFARADAY TECH CORP·Filed 2008·Application pending·0 cites
- 4241US8648407B2Semiconductor device and method for fabricating thereofWU TIEH-CHIANG·Filed 2012·Granted Feb 11, 2014·0 cites·18 claims
- 4341US6984534B2Method and device for detecting whether the alignment of bit line contacts and active areas in DRAM devices is normalNANYA TECHNOLOGY CORP·Filed 2004·Granted Jan 10, 2006·2 cites·7 claims
- 4440US7091545B2Memory device and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2004·Granted Aug 15, 2006·0 cites·8 claims
- 4538US10522556B1Antifuse structureNANYA TECHNOLOGY CORP·Filed 2018·Granted Dec 31, 2019·0 cites·9 claims
- 4637US6844207B2Method and device for detecting whether the alignment of bit line contacts and active areas in DRAM devices is normalNANYA TECHNOLOGY CORP·Filed 2003·Granted Jan 18, 2005·1 cites·3 claims
- 4737US2012235228A1Transistor structure and method for preparing the sameHUANG CHIN LING·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →