Inventor · disambiguated record
Chun-Hsien Huang
Also filed as: HUANG CHUN-HSIEN
89 granted patents·34 pending applications·287 citations·filing 1997–2025
99Inventor score
Files withUNITED MICROELECTRONICS CORP56TAIWAN SEMICONDUCTOR MFG CO LTD49HUANG CHUN-HSIEN5PROMD BIOTECH CO LTD2SHL MEDICAL AG2
Top patents by PatentIndex Score
123 records- 0198US9728541B1Static random-access memory (SRAM) cell array and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 8, 2017·16 cites·10 claims
- 0296US9379119B1Static random access memoryUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 28, 2016·15 cites·18 claims
- 0395US9230795B1Directional pre-clean in silicide and contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 5, 2016·24 cites·20 claims
- 0494US11475953B1Semiconductor layout pattern and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Oct 18, 2022·4 cites·10 claims
- 0594US9698047B2Dummy gate technology to avoid shorting circuitUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 4, 2017·12 cites·12 claims
- 0694US9401366B1Layout pattern for 8T-SRAM and the manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 26, 2016·14 cites·19 claims
- 0792US9871048B1Memory deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 16, 2018·13 cites·20 claims
- 0892US9761302B1Static random access memory cell and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Sep 12, 2017·19 cites·19 claims
- 0991US12340830B2Spin-orbit torque magnetic random access memory circuit and layout thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jun 24, 2025·1 cites·6 claims
- 1091US11929314B2Interconnect structures including a fin structure and a metal capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·2 cites·20 claims
- 1189US12349369B2Layout pattern of magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2024·Granted Jul 1, 2025·0 cites·9 claims
- 1289US10153287B1Layout pattern for static random access memoryUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 11, 2018·6 cites·20 claims
- 1389US9786647B1Semiconductor layout structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 10, 2017·7 cites·9 claims
- 1487US8151221B2Method to compensate optical proximity correctionHUANG CHUN-HSIEN·Filed 2010·Granted Apr 3, 2012·6 cites·5 claims
- 1587US2025301661A1Layout pattern of magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1686US12417945B2Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·1 cites·20 claims
- 1786US10847521B2Layout pattern of a static random access memoryUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 24, 2020·4 cites·14 claims
- 1886US9368357B2Directional pre-clean in silicide and contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·4 cites·20 claims
- 1986US8748066B2Method for forming photomasksUNITED MICROELECTRONICS CORP·Filed 2012·Granted Jun 10, 2014·4 cites·19 claims
- 2086US2025357295A1Interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2184US12288716B2Phase control in contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 2284US11101353B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·2 cites·20 claims
- 2384US10068909B1Layout pattern of a memory device formed by static random access memoryUNITED MICROELECTRONICS CORP·Filed 2017·Granted Sep 4, 2018·4 cites·20 claims
- 2484US6865082B2Heat dissipating assemblyWISTRON CORP·Filed 2003·Granted Mar 8, 2005·59 cites·7 claims
- 2583US12211747B2Method of forming contact metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 2683US9947674B2Static random-access memory (SRAM) cell arrayUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 17, 2018·2 cites·8 claims
- 2783US2025349616A1Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2882US12063791B2Layout pattern of magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 13, 2024·0 cites·10 claims
- 2982US11521929B2Capping layer for liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·1 cites·20 claims
- 3082US10861549B1Ternary content addressable memory unit capable of reducing charge sharing effectUNITED MICROELECTRONICS CORP·Filed 2019·Granted Dec 8, 2020·3 cites·16 claims
- 3182US10026726B2Dummy gate technology to avoid shorting circuitUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 17, 2018·3 cites·5 claims
- 3282US9953988B2Method of forming static random-access memory (SRAM) cell arrayUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 24, 2018·2 cites·9 claims
- 3382US2024395874A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3481US11943935B2Layout pattern of magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2022·Granted Mar 26, 2024·0 cites·9 claims
- 3581US11594609B2Liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·1 cites·20 claims
- 3681US10559573B2Static random access memory structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 11, 2020·5 cites·22 claims
- 3781US10381056B2Dual port static random access memory (DPSRAM) cellUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 13, 2019·6 cites·28 claims
- 3881US9711402B1Method of forming contact metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·2 cites·21 claims
- 3980US10706914B2Static random access memoryUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 7, 2020·5 cites·7 claims
- 4080US2024395606A1Semiconductor device with connecting structure having a doped layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4180US2025259890A1Phase control in contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4279US11217524B1Interconnect structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·1 cites·20 claims
- 4379US9793204B2Method of manufacturing semiconductor structure comprising plurality of through holes using metal hard maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·2 cites·20 claims
- 4479US8598712B2Semiconductor structure formed by double patterning techniqueHUANG CHIA-WEI·Filed 2011·Granted Dec 3, 2013·4 cites·6 claims
- 4579US8321820B2Method to compensate optical proximity correctionHUANG CHUN-HSIEN·Filed 2012·Granted Nov 27, 2012·3 cites·5 claims
- 4679US2025167047A1Method of Forming Contact MetalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4777US12009305B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 4877US11791208B2Method of forming contact metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 4977US9773779B2Semiconductor structure with resistor layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 26, 2017·2 cites·20 claims
- 5077US8146025B2Method for correcting layout pattern using rule checking rectangleYANG YU-SHIANG·Filed 2009·Granted Mar 27, 2012·8 cites·5 claims
Showing the top 50 of 123 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →