Inventor · disambiguated record
Chung-Ting Huang
Also filed as: HUANG CHUNG-TING
15 granted patents·3 pending applications·19 citations·filing 2015–2025
89Inventor score
Top patents by PatentIndex Score
18 records- 0196US11495686B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Nov 8, 2022·4 cites·19 claims
- 0295US11545560B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jan 3, 2023·4 cites·9 claims
- 0389US10943991B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Mar 9, 2021·4 cites·8 claims
- 0484US12300743B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted May 13, 2025·0 cites·7 claims
- 0584US12237415B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Granted Feb 25, 2025·0 cites·8 claims
- 0683US9373705B1Manufacturing method of a fin-shaped field effect transistor and a device thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 21, 2016·3 cites·11 claims
- 0780US11769833B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Sep 26, 2023·0 cites·9 claims
- 0880US2025241038A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 0978US12021134B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jun 25, 2024·0 cites·14 claims
- 1078US9680022B1Semiconductor device having silicon-germanium layer on fin and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 13, 2017·2 cites·9 claims
- 1175US2025169119A1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1271US9899498B2Semiconductor device having silicon-germanium layer on fin and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 20, 2018·1 cites·11 claims
- 1370US11121254B2Transistor with strained superlattice as source/drain regionUNITED MICROELECTRONICS CORP·Filed 2019·Granted Sep 14, 2021·1 cites·13 claims
- 1459US11922027B2Memory access speed adjustment method, control device and memory moduleINNODISK CORP·Filed 2022·Granted Mar 5, 2024·0 cites·18 claims
- 1558US10644131B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted May 5, 2020·0 cites·8 claims
- 1654US9660086B2Fin-shaped field effect transistorUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 23, 2017·0 cites·9 claims
- 1754US2024274715A1Semiconductor device having anisotropic layerUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1852US10388756B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 20, 2019·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →