Inventor · disambiguated record
Chung-Lin Huang
Also filed as: HUANG CHUNG-LIN
78 granted patents·35 pending applications·432 citations·filing 1998–2025
99Inventor score
Files withNANYA TECHNOLOGY CORP74LEE TZUNG-HAN17INOTERA MEMORIES INC8HUANG SHIN-BIN6UNIV SOUTHERN TAIWAN SCI & TEC2
Top patents by PatentIndex Score
113 records- 0196US10559568B1Method for preparing semiconductor capacitor structureNANYA TECHNOLOGY CORP·Filed 2018·Granted Feb 11, 2020·13 cites·11 claims
- 0293US6916715B2Method for fabricating a vertical NROM cellNANYA TECHNOLOGY CORP·Filed 2003·Granted Jul 12, 2005·51 cites·10 claims
- 0390US2025351334A1Memory cell with improved insulating structureNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 0488US2025311196A1Memory device having ultra-lightly doped regionNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 0587US6451654B1Process for fabricating self-aligned split gate flash memoryNANYA TECHNOLOGY CORP·Filed 2001·Granted Sep 17, 2002·36 cites·20 claims
- 0686US7682902B2Memory structure and method of making the sameNANYA TECHNOLOGY CORP·Filed 2007·Granted Mar 23, 2010·16 cites·8 claims
- 0784US12225709B2Semiconductor device and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2024·Granted Feb 11, 2025·0 cites·19 claims
- 0884US10168235B1Stretchable piezoelectric sensor applied to logistics for real-time monitoringUNIV SOUTHERN TAIWAN SCI & TEC·Filed 2017·Granted Jan 1, 2019·5 cites·3 claims
- 0983US6893919B2Floating gate and fabricating method of the sameNANYA TECHNOLOGY CORP·Filed 2004·Granted May 17, 2005·26 cites·17 claims
- 1082US10985163B2Semiconductor capacitor structureNANYA TECHNOLOGY CORP·Filed 2019·Granted Apr 20, 2021·2 cites·9 claims
- 1182US7700991B2Two bit memory structure and method of making the sameNANYA TECHNOLOGY CORP·Filed 2007·Granted Apr 20, 2010·11 cites·7 claims
- 1281US12484215B2Memory cell with improved insulating structureNANYA TECHNOLOGY CORP·Filed 2022·Granted Nov 25, 2025·0 cites·7 claims
- 1381US12446211B2Memory device having ultra-lightly doped regionNANYA TECHNOLOGY CORP·Filed 2022·Granted Oct 14, 2025·0 cites·7 claims
- 1481US6486032B1Method for fabricating control gate and floating gate of a flash memory cellNANYA TECHNOLOGY CORP·Filed 2002·Granted Nov 26, 2002·37 cites·16 claims
- 1580US10573725B1Semiconductor structure and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2018·Granted Feb 25, 2020·2 cites·20 claims
- 1680US2024206156A1Memory cell with improved insulating structure and method of manufacturing thereofNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 1779US8003480B2Process using oxide supporter for manufacturing a capacitor lower electrode of a micro stacked DRAMINOTERA MEMORIES INC·Filed 2010·Granted Aug 23, 2011·6 cites·14 claims
- 1878US8431933B2Memory layout structure and memory structureLEE TZUNG-HAN·Filed 2010·Granted Apr 30, 2013·5 cites·9 claims
- 1977US6847068B2Floating gate and fabrication method thereforNANYA TECHNOLOGY CORP·Filed 2003·Granted Jan 25, 2005·19 cites·19 claims
- 2077US6815290B2Stacked gate flash memory device and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2003·Granted Nov 9, 2004·20 cites·18 claims
- 2176US12225717B2Semiconductor device with dielectric structure having enlargemant portion surrounding word lineNANYA TECHNOLOGY CORP·Filed 2023·Granted Feb 11, 2025·0 cites·7 claims
- 2276US8298892B1Fabricating method of insulatorLEE TZUNG-HAN·Filed 2011·Granted Oct 30, 2012·4 cites·8 claims
- 2372US8288224B2Method for manufacturing capacitor lower electrodes of semiconductor memoryHUANG SHIN-BIN·Filed 2010·Granted Oct 16, 2012·4 cites·13 claims
- 2472US6475894B1Process for fabricating a floating gate of a flash memory in a self-aligned mannerNANYA TECHNOLOGY CORP·Filed 2002·Granted Nov 5, 2002·18 cites·10 claims
- 2572US2024057322A1Semiconductor structure and semiconductor manufacturing methodNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 2672US2024258405A1Semiconductor device including multiple spacers and a method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 2771US11557549B2Method of manufacturing semiconductor structure having dummy pattern around array areaNANYA TECHNOLOGY CORP·Filed 2021·Granted Jan 17, 2023·0 cites·18 claims
- 2870US11943910B2Semiconductor device and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2021·Granted Mar 26, 2024·0 cites·18 claims
- 2970US11805640B2Manufacturing method of a semiconductor device using a protect layer along a top sidewall of a trench to widen the bottom of the trenchNANYA TECHNOLOGY CORP·Filed 2022·Granted Oct 31, 2023·0 cites·9 claims
- 3070US6770520B2Floating gate and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2003·Granted Aug 3, 2004·13 cites·10 claims
- 3169US8455363B2Method for adjusting trench depth of substrateLEE TZUNG-HAN·Filed 2011·Granted Jun 4, 2013·2 cites·2 claims
- 3269US7960241B2Manufacturing method for double-side capacitor of stack DRAMINOTERA MEMORIES INC·Filed 2010·Granted Jun 14, 2011·3 cites·20 claims
- 3367US6800526B2Method for manufacturing a self-aligned split-gate flash memory cellNANYA TECHNOLOGY CORP·Filed 2002·Granted Oct 5, 2004·11 cites·5 claims
- 3467US6770532B2Method for fabricating memory unit with T-shaped gateNANYA TECHNOLOGY CORP·Filed 2003·Granted Aug 3, 2004·13 cites·24 claims
- 3566US11315887B2Semiconductor structure having dummy pattern around array area and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Apr 26, 2022·0 cites·15 claims
- 3666US7781279B2Method for manufacturing a memoryNANYA TECHNOLOGY CORP·Filed 2008·Granted Aug 24, 2010·2 cites·7 claims
- 3766US7323743B2Floating gateNANYA TECHNOLOGY CORP·Filed 2006·Granted Jan 29, 2008·2 cites·5 claims
- 3865US8471320B2Memory layout structureLEE TZUNG-HAN·Filed 2012·Granted Jun 25, 2013·2 cites·9 claims
- 3964US11450553B2Semiconductor structure and method of forming the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Sep 20, 2022·0 cites·4 claims
- 4064US6872623B2Floating gate and fabricating method thereofNANYA TECHNOLOGY CORP·Filed 2003·Granted Mar 29, 2005·8 cites·10 claims
- 4164US6773993B2Method for manufacturing a self-aligned split-gate flash memory cellNANYA TECHNOLOGY CORP·Filed 2001·Granted Aug 10, 2004·10 cites·19 claims
- 4264US2023276616A1Semiconductor structure and semiconductor manufacturing methodNANYA TECHNOLOGY CORP·Filed 2022·Application pending·0 cites
- 4363US2022384246A1Method of forming semiconductor structureNANYA TECHNOLOGY CORP·Filed 2022·Application pending·0 cites
- 4463US2025151263A1Memory device and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 4562US6855966B2Floating gate and fabricating method of the sameNANYA TECHNOLOGY CORP·Filed 2003·Granted Feb 15, 2005·8 cites·9 claims
- 4661US8148766B2Nonvolatile memory cellHUANG SHIN-BIN·Filed 2008·Granted Apr 3, 2012·2 cites·3 claims
- 4761US7005701B2Method for fabricating a vertical NROM cellNANYA TECHNOLOGY CORP·Filed 2002·Granted Feb 28, 2006·6 cites·7 claims
- 4861US6649474B1Method for fabricating a source line of a flash memory cellNANYA TECHNOLOGY CORP·Filed 2003·Granted Nov 18, 2003·9 cites·20 claims
- 4960US8703562B2Manufacturing method of random access memoryLEE TZUNG-HAN·Filed 2012·Granted Apr 22, 2014·1 cites·10 claims
- 5060US6100117AMethod for manufacturing DRAM having a redundancy circuit regionNANYA TECHNOLOGY CORP·Filed 1998·Granted Aug 8, 2000·27 cites·16 claims
Showing the top 50 of 113 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Chung-Lin Huang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →