Inventor · disambiguated record
Cheol Seong Hwang
Also filed as: HWANG CHEOL SEONG
30 granted patents·15 pending applications·452 citations·filing 1995–2025
97Inventor score
Files withSEOUL NAT UNIV R&DB FOUNDATION15SAMSUNG ELECTRONICS CO LTD14HWANG CHEOL-SEONG3SAMSUNG ELECTRO MECH3SEOUL NAT UNIV IND FOUNDATION2
Top patents by PatentIndex Score
45 records- 0196US10210921B1Non-volatile ferroelectric memory device and method of driving the sameSEOUL NAT UNIV R&DB FOUNDATION·Filed 2018·Granted Feb 19, 2019·33 cites·19 claims
- 0293US7564116B2Printed circuit board with embedded capacitors therein and manufacturing process thereofSAMSUNG ELECTRO MECH·Filed 2008·Granted Jul 21, 2009·33 cites·10 claims
- 0391US8399874B2Vertical nonvolatile memory device including a selective diodeHWANG CHEOL SEONG·Filed 2011·Granted Mar 19, 2013·18 cites·9 claims
- 0490US9214630B2Method of making a multicomponent filmAIR PROD & CHEM·Filed 2014·Granted Dec 15, 2015·6 cites·20 claims
- 0590US6980413B1Thin film multi-layered ceramic capacitor and method of manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2005·Granted Dec 27, 2005·21 cites·28 claims
- 0687US10886276B2Semiconductor memory device and method of fabricating the sameSEOUL NAT UNIV R&DB FOUNDATION·Filed 2016·Granted Jan 5, 2021·6 cites·13 claims
- 0786US5618746AMethod for manufacturing a capacitor of semiconductor device having diffusion-blocking filmsSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Apr 8, 1997·75 cites·9 claims
- 0885US10825889B2Semiconductor device including capacitor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 3, 2020·3 cites·20 claims
- 0983US5940705AMethods of forming floating-gate FFRAM devicesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Aug 17, 1999·55 cites·13 claims
- 1078US7378326B2Printed circuit board with embedded capacitors therein and manufacturing process thereofSAMSUNG ELECTRO MECH·Filed 2006·Granted May 27, 2008·9 cites·18 claims
- 1176US9331272B23-dimensional (3D) non-volatile memory device and method of fabricating the sameHWANG CHEOL SEONG·Filed 2012·Granted May 3, 2016·6 cites·9 claims
- 1275US12230667B2Semiconductor device including capacitor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
- 1375US11087839B2Nonvolatile memory device with vertical string including semiconductor and resistance change layers, and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 10, 2021·1 cites·17 claims
- 1474US9735203B23-dimensional (3D) non-volatile memory device and method of fabricating the sameUNIV SEOUL NAT R & DB FOUND·Filed 2016·Granted Aug 15, 2017·3 cites·12 claims
- 1574US5621606ACapacitor utilizing high dielectric constant materialSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Apr 15, 1997·34 cites·23 claims
- 1673US6001660AMethods of forming integrated circuit capacitors using metal reflow techniquesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Dec 14, 1999·48 cites·17 claims
- 1769US11411069B2Semiconductor device including capacitor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·19 claims
- 1867US7575940B2Dielectric film, method of manufacturing the same, and semiconductor capacitor having the dielectric filmSEOUL NAT UNIV IND FOUNDATION·Filed 2007·Granted Aug 18, 2009·2 cites·13 claims
- 1965US6177284B1Conductive diffusion barrier layer, semiconductor device having the same, and manufacturing thereofSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 23, 2001·30 cites·9 claims
- 2063US11574677B2Nonvolatile memory device with vertical string including semiconductor and resistance change layers, and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·21 claims
- 2163US8023318B2Resistance memory element, phase change memory element, resistance random access memory device, information reading method thereof, phase change random access memory device, and information reading method thereofSNU R&DB FOUNDATION·Filed 2009·Granted Sep 20, 2011·5 cites·24 claims
- 2262US5696015AMethod of fabricating capacitor structures for inclusion within semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 9, 1997·19 cites·4 claims
- 2362US2025280740A1Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the sameSEOUL NAT UNIV R&DB FOUNDATION·Filed 2025·Application pending·0 cites
- 2462US2025089232A1Memory device and manufacturing method thereofSEOUL NAT UNIV R&DB FOUNDATION·Filed 2023·Application pending·0 cites
- 2562US2025089242A1Memory device and manufacturing method thereofSEOUL NAT UNIV R&DB FOUNDATION·Filed 2023·Application pending·0 cites
- 2661US10325654B2Resistive memory device and method of fabricating the sameSK HYNIX INC·Filed 2017·Granted Jun 18, 2019·0 cites·9 claims
- 2761US2025259788A1Capacitor, method of manufacturing the same, and device including capacitorSEOUL NAT UNIV R&DB FOUNDATION·Filed 2025·Application pending·0 cites
- 2858US12356873B2Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the sameSEOUL NAT UNIV R&DB FOUNDATION·Filed 2021·Granted Jul 8, 2025·0 cites·10 claims
- 2958US2024397699A1Capacitorless 3d stacked dram device and manufacturing method thereofSEOUL NAT UNIV R&DB FOUNDATION·Filed 2023·Application pending·0 cites
- 3058US2025089238A1Memory device and manufacturing method thereofSEOUL NAT UNIV R&DB FOUNDATION·Filed 2023·Application pending·0 cites
- 3158US2025374532A1Memory device and method of manufacturing the sameSEOUL NAT UNIV R&DB FOUNDATION·Filed 2025·Application pending·0 cites
- 3257US5568352ACapacitor and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Oct 22, 1996·18 cites·20 claims
- 3356US2024215265A1Temporal kernel devices, temporal kernel computing systems, and methods of their operationSEOUL NAT UNIV R&DB FOUNDATION·Filed 2022·Application pending·0 cites
- 3454US6180970B1Microelectronic devices including ferroelectric capacitors with lower electrodes extending into contact holesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jan 30, 2001·18 cites·14 claims
- 3552US2025098140A1Capacitorless 3d dram device and manufacturing method thereofSEOUL NAT UNIV R&DB FOUNDATION·Filed 2023·Application pending·0 cites
- 3648US10515695B2Resistive memory device and method of fabricating the sameSK HYNIX INC·Filed 2019·Granted Dec 24, 2019·0 cites·7 claims
- 3748US2025107109A1Memory device and manufacturing method thereofSEOUL NAT UNIV R&DB FOUNDATION·Filed 2023·Application pending·0 cites
- 3846US5834804AFerroelectric structure including MgTiO3 passivationSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Nov 10, 1998·9 cites·13 claims
- 3945US2021384258A1Three-dimensional resistive switching memory device and method of fabricating the sameSEOUL NAT UNIV R&DB FOUNDATION·Filed 2020·Application pending·0 cites
- 4043US2011020547A1High dielectric constant films deposited at high temperature by atomic layer depositionGATINEAU JULIEN·Filed 2009·Application pending·0 cites
- 4142US2009141426A1Thin film multi-layered ceramic capacitor and method of fabricating the sameHWANG CHEOL-SEONG·Filed 2007·Application pending·0 cites
- 4241US7687795B2Phase change memory device with reinforced adhesion forceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Mar 30, 2010·0 cites·16 claims
- 4341US2009065896A1CAPACITOR HAVING Ru ELECTRODE AND TiO2 DIELECTRIC LAYER FOR SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAMESEOUL NAT UNIV IND FOUNDATION·Filed 2007·Application pending·0 cites
- 4438US10622561B2Variable resistor, non-volatile memory device using the same, and method of fabricating thereofSEOUL NAT UNIV R&DB FOUNDATION·Filed 2016·Granted Apr 14, 2020·0 cites·7 claims
- 4537US2001000624A1Microelectronic devices including ferroelectric capacitors with lower electrodes extending into contact holes and related methodsFiled 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →