Inventor · disambiguated record
Chuck Jang
Also filed as: JANG CHUCK
16 granted patents·4 pending applications·317 citations·filing 1996–2007
94Inventor score
Files withPROMOS TECHNOLOGIES INC11CHARTERED SEMICONDUCTOR MFG2DONG ZHONG1JANG CHUCK1MOSEL VITEL INC1
Top patents by PatentIndex Score
20 records- 0193US7122415B2Atomic layer deposition of interpoly oxides in a non-volatile memory devicePROMOS TECHNOLOGIES INC·Filed 2002·Granted Oct 17, 2006·67 cites·18 claims
- 0286US5767004AMethod for forming a low impurity diffusion polysilicon layerCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted Jun 16, 1998·108 cites·22 claims
- 0383US7323729B2Methods for improving quality of high temperature oxide (HTO) formed from halogen-containing precursor and products thereof and apparatus thereforPROMOS TECHNOLOGIES INC·Filed 2006·Granted Jan 29, 2008·7 cites·12 claims
- 0481US7001810B2Floating gate nitridationPROMOS TECHNOLOGIES INC·Filed 2004·Granted Feb 21, 2006·22 cites·19 claims
- 0579US7910429B2Method of forming ONO-type sidewall with reduced bird's beakPROMOS TECHNOLOGIES INC·Filed 2004·Granted Mar 22, 2011·28 cites·21 claims
- 0672US6787409B2Method of forming trench isolation without groovingMOSEL VITELIC INC·Filed 2002·Granted Sep 7, 2004·16 cites·26 claims
- 0765US7071127B2Methods for improving quality of semiconductor oxide composition formed from halogen-containing precursorPROMOS TECHNOLOGIES INC·Filed 2003·Granted Jul 4, 2006·8 cites·11 claims
- 0865US6849897B2Transistor including SiON buffer layerPROMOS TECHNOLOGIES INC·Filed 2003·Granted Feb 1, 2005·8 cites·7 claims
- 0964US6881668B2Control of air gap position in a dielectric layerMOSEL VITEL INC·Filed 2003·Granted Apr 19, 2005·15 cites·31 claims
- 1059US7087998B2Control of air gap position in a dielectric layerPROMOS TECHNOLOGY INC·Filed 2004·Granted Aug 8, 2006·9 cites·19 claims
- 1156US7229880B2Precision creation of inter-gates insulatorPROMOS TECHNOLOGIES INC·Filed 2003·Granted Jun 12, 2007·6 cites·22 claims
- 1255US6924542B2Trench isolation without groovingPROMOS TECHNOLOGIES INC·Filed 2004·Granted Aug 2, 2005·5 cites·19 claims
- 1354US7297597B2Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics for associated high voltage write transistors and gate dielectrics for low voltage logic transistors by using ISSGPROMOS TECHNOLOGIES INC·Filed 2004·Granted Nov 20, 2007·6 cites·19 claims
- 1450US7026172B2Reduced thickness variation in a material layer deposited in narrow and wide integrated circuit trenchesPROMOS TECHNOLOGIES INC·Filed 2001·Granted Apr 11, 2006·3 cites·53 claims
- 1550US6893920B2Method for forming a protective buffer layer for high temperature oxide processingPROMOS TECHNOLOGIES INC·Filed 2002·Granted May 17, 2005·2 cites·14 claims
- 1648US2006008997A1Atomic layer deposition of interpoly oxides in a non-volatile memory deviceJANG CHUCK·Filed 2005·Application pending·0 cites
- 1741US5618756ASelective WSix depositionCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted Apr 8, 1997·7 cites·19 claims
- 1841US2007264776A1Precision creation of inter-gates insulatorDONG ZHONG·Filed 2007·Application pending·0 cites
- 1937US2003153149A1Floating gate nitridationFiled 2002·Application pending·0 cites
- 2037US2003153150A1Floating gate nitridationFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →