Assignee
DONG ZHONG
US·1 granted patent·9 pending applications·3 citations·filing 2006–2010
Top patents by PatentIndex Score
10 records- 0167US8283733B2Semiconductor devices with gate electrodes and with monocrystalline silicon regions that contain atoms of nitrogen and one or more of chlorine, bromine, sulfur, fluorine, or phosphorusDONG ZHONG·Filed 2010·Granted Oct 9, 2012·3 cites·23 claims
- 0247US2009039413A1Method to form uniform tunnel oxide for flash devices and the resulting structuresDONG ZHONG·Filed 2008·Application pending·0 cites
- 0345US2007138579A1Fabrication of nitrogen containing regions on silicon containing regions in integrated circuits, and integrated circuits obtained therebyDONG ZHONG·Filed 2007·Application pending·0 cites
- 0444US2008135917A1Method to form uniform tunnel oxide for flash devices and the resulting structuresDONG ZHONG·Filed 2006·Application pending·0 cites
- 0544US2008132086A1Reducing nitrogen concentration with in-situ steam generationDONG ZHONG·Filed 2008·Application pending·0 cites
- 0642US2007205446A1Reducing nitrogen concentration with in-situ steam generationDONG ZHONG·Filed 2007·Application pending·0 cites
- 0742US2007128800A1Use of chlorine to fabricate trench dielectric in integrated circuitsDONG ZHONG·Filed 2007·Application pending·0 cites
- 0841US2007264776A1Precision creation of inter-gates insulatorDONG ZHONG·Filed 2007·Application pending·0 cites
- 0937US2009140318A1Nonvolatile memories with higher conduction-band edge adjacent to charge-trapping dielectricDONG ZHONG·Filed 2007·Application pending·0 cites
- 1035US2009032861A1Nonvolatile memories with charge trapping layers containing silicon nitride with germanium or phosphorusDONG ZHONG·Filed 2007·Application pending·0 cites
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