Reducing nitrogen concentration with in-situ steam generation

Abstract

In-situ steam generation (ISSG) is used to reduce the nitrogen concentration in silicon and silicon oxide areas.

1 . An integrated circuit comprising: 
 a first silicon region comprising a channel region of a transistor;    a gate dielectric region on the first silicon region;    a gate of the transistor on the gate dielectric region, the gate comprising silicon;    wherein the first silicon region comprises nitrogen, and the first silicon region has a lower nitrogen concentration at the top surface immediately laterally adjacent to the gate than at the top surface under the gate.    
   
   
       2 . The integrated circuit of  claim 1  further comprising silicon oxide on the top surface of the first silicon region immediately adjacent to the gate.  
   
   
       3 . The integrated circuit of  claim 1  further comprising silicon oxide on a surface of the gate.  
   
   
       4 . The integrated circuit of  claim 1  wherein the gate of the transistor and/or a channel region of the transistor and/or a source/drain region of the transistor comprise boron and/or phosphorus.