Inventor · disambiguated record
Ching-Hwa Chen
Also filed as: CHEN CHING H · CHEN CHING-HWA
22 granted patents·10 pending applications·2,528 citations·filing 1983–2010
97Inventor score
Files withLAM RES CORP9DONG ZHONG4PROMOS TECHNOLOGIES INC4PROMOS TECHNOLOGIES PTE LTD4CHEN JIANN JONG3
Top patents by PatentIndex Score
32 records- 0199US5234526AWindow for microwave plasma processing deviceLAM RES CORP·Filed 1991·Granted Aug 10, 1993·449 cites·37 claims
- 0298US5356478APlasma cleaning method for removing residues in a plasma treatment chamberLAM RES CORP·Filed 1994·Granted Oct 18, 1994·892 cites·22 claims
- 0397US5198725AMethod of producing flat ecr layer in microwave plasma device and apparatus thereforLAM RES CORP·Filed 1991·Granted Mar 30, 1993·129 cites·21 claims
- 0496US5226967APlasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamberLAM RES CORP·Filed 1992·Granted Jul 13, 1993·427 cites·11 claims
- 0594US5368710AMethod of treating an article with a plasma apparatus in which a uniform electric field is induced by a dielectric windowLAM RES CORP·Filed 1993·Granted Nov 29, 1994·135 cites·13 claims
- 0693US7122415B2Atomic layer deposition of interpoly oxides in a non-volatile memory devicePROMOS TECHNOLOGIES INC·Filed 2002·Granted Oct 17, 2006·67 cites·18 claims
- 0790US6337277B1Clean chemistry low-k organic polymer etchLAM RES CORP·Filed 2000·Granted Jan 8, 2002·55 cites·20 claims
- 0887US5812361ADynamic feedback electrostatic wafer chuckLAM RES CORP·Filed 1996·Granted Sep 22, 1998·97 cites·23 claims
- 0982US5824605AGas dispersion window for plasma apparatus and method of use thereofLAM RES CORP·Filed 1995·Granted Oct 20, 1998·87 cites·21 claims
- 1081US7001810B2Floating gate nitridationPROMOS TECHNOLOGIES INC·Filed 2004·Granted Feb 21, 2006·22 cites·19 claims
- 1179US7910429B2Method of forming ONO-type sidewall with reduced bird's beakPROMOS TECHNOLOGIES INC·Filed 2004·Granted Mar 22, 2011·28 cites·21 claims
- 1273US7387972B2Reducing nitrogen concentration with in-situ steam generationPROMOS TECHNOLOGIES PTE LTD·Filed 2006·Granted Jun 17, 2008·4 cites·24 claims
- 1370US6221792B1Metal and metal silicide nitridization in a high density, low pressure plasma reactorLAM RES CORP·Filed 1997·Granted Apr 24, 2001·40 cites·24 claims
- 1467US8283733B2Semiconductor devices with gate electrodes and with monocrystalline silicon regions that contain atoms of nitrogen and one or more of chlorine, bromine, sulfur, fluorine, or phosphorusDONG ZHONG·Filed 2010·Granted Oct 9, 2012·3 cites·23 claims
- 1567US6787415B1Nonvolatile memory with pedestalsMOSEL VITELIC INC·Filed 2003·Granted Sep 7, 2004·13 cites·43 claims
- 1664US7851339B2Method of repairing deep subsurface defects in a silicon substrate that includes diffusing negatively charged ions into the substrate from a sacrificial oxide layerPROMOS TECHNOLOGIES PTE LTD·Filed 2008·Granted Dec 14, 2010·2 cites·19 claims
- 1759US7807577B2Fabrication of integrated circuits with isolation trenchesPROMOS TECHNOLOGIES PTE LTD·Filed 2008·Granted Oct 5, 2010·1 cites·15 claims
- 1854US7297597B2Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics for associated high voltage write transistors and gate dielectrics for low voltage logic transistors by using ISSGPROMOS TECHNOLOGIES INC·Filed 2004·Granted Nov 20, 2007·6 cites·19 claims
- 1948US2006008997A1Atomic layer deposition of interpoly oxides in a non-volatile memory deviceJANG CHUCK·Filed 2005·Application pending·0 cites
- 2045US4897887APreknotted adjustable necktieCHEN JIANN JONG·Filed 1988·Granted Feb 6, 1990·23 cites·8 claims
- 2144US2008132086A1Reducing nitrogen concentration with in-situ steam generationDONG ZHONG·Filed 2008·Application pending·0 cites
- 2243US2010068658A1Photolithographic patterning of arrays of pillars having widths and lengths below the exposure wavelengthsPROMOST TECHNOLOGIES PTE LTD·Filed 2008·Application pending·0 cites
- 2342US4513453APre-tied necktieCHEN JIANN J·Filed 1983·Granted Apr 30, 1985·23 cites·5 claims
- 2442US2007205446A1Reducing nitrogen concentration with in-situ steam generationDONG ZHONG·Filed 2007·Application pending·0 cites
- 2541US2009096009A1Nonvolatile memories which combine a dielectric, charge-trapping layer with a floating gatePROMOS TECHNOLOGIES PTE LTD·Filed 2007·Application pending·0 cites
- 2639US4835794APreset necktieCHEN JIANN JONG·Filed 1988·Granted Jun 6, 1989·17 cites·3 claims
- 2737US2003153149A1Floating gate nitridationFiled 2002·Application pending·0 cites
- 2837US2003153150A1Floating gate nitridationFiled 2002·Application pending·0 cites
- 2935US2009032861A1Nonvolatile memories with charge trapping layers containing silicon nitride with germanium or phosphorusDONG ZHONG·Filed 2007·Application pending·0 cites
- 3032US2001002326A1Metal and metal silicide nitridization in a high density, low pressure plasma reactorFiled 2001·Application pending·0 cites
- 3132US2010063764A1Use of different pairs of overlay layers to check an overlay measurement recipeLOU LIMIN·Filed 2008·Application pending·0 cites
- 3229US4856114ASeaman style preset necktieCHEN JIANN JONG·Filed 1988·Granted Aug 15, 1989·8 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →