Inventor · disambiguated record
Chiliang Chen
Also filed as: CHEN CHILIANG · CHEN CHILIANG L
5 granted patents·18 pending applications·149 citations·filing 1996–2025
82Inventor score
Files withDONG ZHONG6APPLIED MATERIALS INC4HELIAE DEV LLC4PROMOS TECHNOLOGIES PTE LTD3LITTAU KARL A1
Top patents by PatentIndex Score
23 records- 0196US6066836AHigh temperature resistive heater for a process chamberAPPLIED MATERIALS INC·Filed 1996·Granted May 23, 2000·80 cites·38 claims
- 0292US11518721B2Chlorella compositions and methods of use thereof to enhance plant growthHELIAE DEV LLC·Filed 2021·Granted Dec 6, 2022·4 cites·11 claims
- 0379US7222636B2Electronically actuated valveAPPLIED MATERIALS INC·Filed 2003·Granted May 29, 2007·25 cites·40 claims
- 0473US7387972B2Reducing nitrogen concentration with in-situ steam generationPROMOS TECHNOLOGIES PTE LTD·Filed 2006·Granted Jun 17, 2008·4 cites·24 claims
- 0570US2023061833A1Chlorella compositions and methods of use thereof to enhance plant growthHELIAE DEV LLC·Filed 2022·Application pending·0 cites
- 0666US8075789B1Remote plasma cleaning source having reduced reactivity with a substrate processing chamberLITTAU KARL A·Filed 1997·Granted Dec 13, 2011·36 cites·5 claims
- 0762US2023073101A1Microalgal extracellular polymeric substances and agricultural uses thereofHELIAE DEV LLC·Filed 2022·Application pending·0 cites
- 0862US2023042599A1Cellulosic compounds and agricultural uses thereofHELIAE DEV LLC·Filed 2022·Application pending·0 cites
- 0956US2024395459A1Strontium oxide interlayers for improved electrical device performanceWALDMAN RUBEN·Filed 2024·Application pending·0 cites
- 1055US2025257461A1Metal organic resist photosensitivity improvement using organotin amide and organotin alkoxideMERCK PATENT GMBH·Filed 2025·Application pending·0 cites
- 1147US2009039413A1Method to form uniform tunnel oxide for flash devices and the resulting structuresDONG ZHONG·Filed 2008·Application pending·0 cites
- 1247US2007090493A1Fabrication of nitrogen containing regions on silicon containing regions in integrated circuits, and integrated circuits obtained therebyPROMOS TECHNOLOGIES INC·Filed 2005·Application pending·0 cites
- 1345US2007138579A1Fabrication of nitrogen containing regions on silicon containing regions in integrated circuits, and integrated circuits obtained therebyDONG ZHONG·Filed 2007·Application pending·0 cites
- 1444US2008135917A1Method to form uniform tunnel oxide for flash devices and the resulting structuresDONG ZHONG·Filed 2006·Application pending·0 cites
- 1544US2008132086A1Reducing nitrogen concentration with in-situ steam generationDONG ZHONG·Filed 2008·Application pending·0 cites
- 1642US2007205446A1Reducing nitrogen concentration with in-situ steam generationDONG ZHONG·Filed 2007·Application pending·0 cites
- 1741US2009096009A1Nonvolatile memories which combine a dielectric, charge-trapping layer with a floating gatePROMOS TECHNOLOGIES PTE LTD·Filed 2007·Application pending·0 cites
- 1841US2008286984A1Silicon-rich low-hydrogen content silicon nitride filmTAYLOR JASON B·Filed 2007·Application pending·0 cites
- 1940US2007262476A1Method for providing STI structures with high coupling ratio in integrated circuit manufacturingPROMOS TECHNOLOGIES PTE LTD·Filed 2006·Application pending·0 cites
- 2038US2002168840A1Deposition of tungsten silicide filmsAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 2136US2007009658A1Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD processYOO JONG H·Filed 2001·Application pending·0 cites
- 2236US2003000647A1Substrate processing chamberAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 2335US2009032861A1Nonvolatile memories with charge trapping layers containing silicon nitride with germanium or phosphorusDONG ZHONG·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →