Inventor · disambiguated record
Chul-Min Jung
Also filed as: JUNG CHUL · JUNG CHUL M · JUNG CHUL-MIN
23 granted patents·1 pending application·320 citations·filing 1993–2013
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD14MICRON TECHNOLOGY INC7AGENCY DEFENSE DEV1JUNG CHUL MIN1PARK KWANG-BUM1
Top patents by PatentIndex Score
24 records- 0190US6011421AScalable level shifter for use in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jan 4, 2000·75 cites·17 claims
- 0275US6177320B1Method for forming a self aligned contact in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 23, 2001·50 cites·30 claims
- 0374US5592121AInternal power-supply voltage supplier of semiconductor integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Jan 7, 1997·31 cites·17 claims
- 0468US8881667B2Cavitation device of underwater moving body and underwater moving body having the sameJUNG CHUL MIN·Filed 2012·Granted Nov 11, 2014·5 cites·9 claims
- 0567US5477497ASemiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Dec 19, 1995·26 cites·28 claims
- 0666US7433250B2Sense amplifier circuitMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 7, 2008·4 cites·18 claims
- 0763US7133321B2Sense amplifier circuitMICRON TECHNOLOGY INC·Filed 2003·Granted Nov 7, 2006·9 cites·11 claims
- 0858US9227710B2Cylindrical underwater vehicle with vertical end plate attached to partially movable rudderAGENCY DEFENSE DEV·Filed 2013·Granted Jan 5, 2016·1 cites·9 claims
- 0957US6275069B1Self-resetting logic circuits and method of operation thereofSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 14, 2001·15 cites·20 claims
- 1057US5467313ALevel shifter and data output buffer having sameSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Nov 14, 1995·14 cites·19 claims
- 1153US5384736AData output circuit of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Jan 24, 1995·15 cites·15 claims
- 1252US7268614B2Low supply voltage bias circuit, semiconductor device, wafer and system including same, and method of generating a bias referenceMICRON TECHNOLOGY INC·Filed 2006·Granted Sep 11, 2007·2 cites·23 claims
- 1352US5777931ASynchronized redundancy decoding systems and methods for integrated circuit memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jul 7, 1998·15 cites·15 claims
- 1451US7071770B2Low supply voltage bias circuit, semiconductor device, wafer and system including same, and method of generating a bias referenceMICRON TECHNOLOGY INC·Filed 2004·Granted Jul 4, 2006·6 cites·26 claims
- 1550US6023177ASemiconductor memory device for providing burst mode control signal, device comprising plural serial transition registersSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Feb 8, 2000·13 cites·15 claims
- 1647US7274609B2High speed redundant data sensing method and apparatusMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 25, 2007·1 cites·20 claims
- 1747US6985391B2High speed redundant data sensing method and apparatusMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 10, 2006·4 cites·38 claims
- 1845US6165840AMethod for fabricating a DRAM cell capacitor including forming first multilayer insulator, forming conductive plug, forming second insulator, and etching second and first insulators to form the storage nodeSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 26, 2000·13 cites·11 claims
- 1943US7606088B2Sense amplifier circuitMICRON TECHNOLOGY INC·Filed 2008·Granted Oct 20, 2009·0 cites·16 claims
- 2043US2013062535A1Surface-processing device for a dental implantPARK KWANG BUM·Filed 2011·Application pending·0 cites
- 2141US6064609ASemiconductor memory device with true/complement redundancy schemeSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted May 16, 2000·8 cites·12 claims
- 2241US5680062AGunn transceiver logic input circuit for use in a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 21, 1997·6 cites·10 claims
- 2337US5699304ADynamic level converter of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 16, 1997·7 cites·15 claims
- 2429US7282407B1Semiconductor memory device and method of manufacturing for preventing bit line oxidationSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Oct 16, 2007·0 cites·27 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →