Inventor · disambiguated record
Chang-Seok Kang
Also filed as: KANG CHANG S · KANG CHANG SEOK
80 granted patents·31 pending applications·775 citations·filing 1994–2024
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD49APPLIED MATERIALS INC40HYNIX SEMICONDUCTOR INC8KIM JU-HYUNG5CHOE BYEONG-IN3
Top patents by PatentIndex Score
111 records- 0197US11295786B23D dram structure with high mobility channelAPPLIED MATERIALS INC·Filed 2020·Granted Apr 5, 2022·5 cites·8 claims
- 0297US9716104B2Vertical memory devices having dummy channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 25, 2017·39 cites·19 claims
- 0396US11930637B2Confined charge trap layerAPPLIED MATERIALS INC·Filed 2021·Granted Mar 12, 2024·3 cites·15 claims
- 0496US11818877B2Three-dimensional dynamic random access memory (DRAM) and methods of forming the sameAPPLIED MATERIALS INC·Filed 2021·Granted Nov 14, 2023·2 cites·18 claims
- 0595US10153292B2Vertical memory devices having dummy channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 11, 2018·12 cites·13 claims
- 0694US10998329B2Methods and apparatus for three dimensional NAND structure fabricationAPPLIED MATERIALS INC·Filed 2019·Granted May 4, 2021·11 cites·9 claims
- 0793US10964717B2Methods and apparatus for three-dimensional NAND structure fabricationAPPLIED MATERIALS INC·Filed 2019·Granted Mar 30, 2021·8 cites·20 claims
- 0893US5834357AFabricating method of making a fin shaped capacitorSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Nov 10, 1998·104 cites·15 claims
- 0991US7399672B2Methods of forming nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 15, 2008·19 cites·14 claims
- 1091US6922098B2Internal voltage generating circuitHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Jul 26, 2005·43 cites·18 claims
- 1189US9905568B2Nonvolatile memory device and a method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 27, 2018·7 cites·20 claims
- 1289US9431418B2Vertical memory devices and methods of manufacturing the sameJUNG WON-SEOK·Filed 2015·Granted Aug 30, 2016·8 cites·20 claims
- 1389US8513729B2Vertical structure nonvolatile memory devicesCHOE BYEONG-IN·Filed 2011·Granted Aug 20, 2013·10 cites·20 claims
- 1489US5786259AMethods of forming integrated circuit capacitors including etch stopping layersSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 28, 1998·80 cites·31 claims
- 1588US11910614B2Three dimensional semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 20, 2024·1 cites·20 claims
- 1688US9646984B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 9, 2017·5 cites·8 claims
- 1787US9972636B2Vertical memory devices having dummy channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 15, 2018·4 cites·21 claims
- 1886US7776687B2Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 17, 2010·9 cites·21 claims
- 1985US5552337AMethod for manfacturing a capacitor for a semiconductor memory device having a tautalum oxide filmSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Sep 3, 1996·58 cites·10 claims
- 2084US7732856B2Charge-trap type non-volatile memory devices and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 8, 2010·10 cites·27 claims
- 2182US10896728B2Method of writing data in nonvolatile memory device, with divided subpages or subblocks, and method of erasing data in nonvolatile memory device with divided subpages or subblocksSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 19, 2021·5 cites·7 claims
- 2282US8877591B2Methods of manufacturing vertical structure nonvolatile memory devicesCHOE BYEONG-IN·Filed 2013·Granted Nov 4, 2014·6 cites·20 claims
- 2382US6867641B2Internal voltage generator for semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Mar 15, 2005·29 cites·6 claims
- 2480US11296104B2Three dimensional semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 5, 2022·1 cites·15 claims
- 2580US8089114B2Non-volatile memory devices including blocking and interface patterns between charge storage patterns and control electrodes and related methodsKIM JU-HYUNG·Filed 2008·Granted Jan 3, 2012·6 cites·7 claims
- 2680US7867883B2Methods of fabricating non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 11, 2011·7 cites·13 claims
- 2780US6078493AFin-shaped capacitorSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 20, 2000·38 cites·10 claims
- 2879US10763167B2Vertical semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 1, 2020·2 cites·20 claims
- 2979US10629609B2Three dimensional semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 21, 2020·2 cites·20 claims
- 3078US10199389B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 5, 2019·2 cites·30 claims
- 3178US7605430B2Nonvolatile memory devices having a fin shaped active region and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 20, 2009·6 cites·14 claims
- 3278US7547942B2Nonvolatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 16, 2009·7 cites·11 claims
- 3377US8643077B2Non-volatile memory devices including blocking insulation patterns with sub-layers having different energy band gapsKIM JU-HYUNG·Filed 2011·Granted Feb 4, 2014·3 cites·9 claims
- 3477US5955774AIntegrated circuit ferroelectric memory devices including resistors in periphery regionSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 21, 1999·35 cites·15 claims
- 3576US12473644B2Growth of thin oxide layer with silicon nitride and conversionAPPLIED MATERIALS INC·Filed 2024·Granted Nov 18, 2025·0 cites·23 claims
- 3676US9112045B2Nonvolatile memory device and fabricating method thereofKIM JU-HYUNG·Filed 2013·Granted Aug 18, 2015·4 cites·24 claims
- 3776US5796133ASemiconductor device capacitor having lower electrodes separated by low dielectric spacer materialSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Aug 18, 1998·33 cites·16 claims
- 3875US10297543B2Vertical semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 21, 2019·2 cites·20 claims
- 3974US12464716B2NAND cell structure with charge trap cutAPPLIED MATERIALS INC·Filed 2022·Granted Nov 4, 2025·0 cites·10 claims
- 4074US8522115B2Flash memory device and memory system comprising sameKIM JU HYUNG·Filed 2010·Granted Aug 27, 2013·5 cites·18 claims
- 4173US2025037989A1Sequential plasma and thermal treatmentAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4272US10672789B2Methods of manufacturing vertical semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 2, 2020·2 cites·20 claims
- 4372US2023420232A1Integrated method and tool for high quality selective silicon nitride depositionAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4471US10658374B2Vertical semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 19, 2020·1 cites·20 claims
- 4571US2023157004A13-d dram structures and methods of manufactureAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4669US12142475B2Sequential plasma and thermal treatmentAPPLIED MATERIALS INC·Filed 2022·Granted Nov 12, 2024·0 cites·19 claims
- 4769US11545504B2Methods and apparatus for three dimensional NAND structure fabricationAPPLIED MATERIALS INC·Filed 2021·Granted Jan 3, 2023·0 cites·13 claims
- 4869US11430801B2Methods and apparatus for three dimensional NAND structure fabricationAPPLIED MATERIALS INC·Filed 2021·Granted Aug 30, 2022·0 cites·13 claims
- 4969US5834348AMethod for manufacturing a semiconductor device having a ferroelectric capacitorSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Nov 10, 1998·25 cites·5 claims
- 5068US6211005B1Methods of fabricating integrated circuit ferroelectric memory devices including a material layer on the upper electrodes of the ferroelectric capacitors thereofSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 3, 2001·23 cites·31 claims
Showing the top 50 of 111 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →