Inventor · disambiguated record
Changseok Kang
Also filed as: KANG CHANGSEOK
16 granted patents·3 pending applications·111 citations·filing 2010–2025
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD7APPLIED MATERIALS INC4CHANG SUNG-IL3CHOE BYEONG-IN1HWANG SUNG-MIN1
Top patents by PatentIndex Score
19 records- 0195US8809938B2Three dimensional semiconductor memory devicesHWANG SUNG-MIN·Filed 2011·Granted Aug 19, 2014·24 cites·20 claims
- 0291US9484355B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 1, 2016·11 cites·20 claims
- 0390US8767465B2Nonvolatile memory device and method of manufacturing the sameCHANG SUNG-IL·Filed 2010·Granted Jul 1, 2014·12 cites·26 claims
- 0489US8379456B2Nonvolatile memory devices having dummy cell and bias methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 19, 2013·14 cites·19 claims
- 0588US8724394B2Nonvolatile memory device and operating method thereofCHOE BYEONG-IN·Filed 2011·Granted May 13, 2014·10 cites·17 claims
- 0684US9543316B2Semiconductor memory device and method of fabricating the sameLEE HYUNMIN·Filed 2015·Granted Jan 10, 2017·8 cites·20 claims
- 0784US8644074B2Nonvolatile memory device, programming method thereof and memory system including the sameCHANG SUNG-IL·Filed 2011·Granted Feb 4, 2014·10 cites·20 claims
- 0883US8599622B2Charge trap flash memory device and an erasing method thereofKIM JUHYUNG·Filed 2011·Granted Dec 3, 2013·13 cites·16 claims
- 0980US9698158B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 4, 2017·3 cites·12 claims
- 1080US2025351429A1Structure and fabrication method of high voltage mosfet with a vertical drift regionAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 1172US10818689B2Three-dimensional semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 27, 2020·1 cites·20 claims
- 1269US12408370B2Structure and fabrication method of high voltage MOSFET with a vertical drift regionAPPLIED MATERIALS INC·Filed 2022·Granted Sep 2, 2025·0 cites·10 claims
- 1368US8804417B2Nonvolatile memory device including dummy memory cell and program method thereofPARK CHAN·Filed 2011·Granted Aug 12, 2014·5 cites·5 claims
- 1467US11574924B2Memory cell fabrication for 3D NAND applicationsAPPLIED MATERIALS INC·Filed 2021·Granted Feb 7, 2023·0 cites·17 claims
- 1559US11158650B2Memory cell fabrication for 3D nand applicationsAPPLIED MATERIALS INC·Filed 2019·Granted Oct 26, 2021·0 cites·15 claims
- 1653US9466704B2Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 11, 2016·0 cites·30 claims
- 1751US9991275B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 5, 2018·0 cites·22 claims
- 1844US2012003828A1Semiconductor memory device and method of forming the sameCHANG SUNG-IL·Filed 2011·Application pending·0 cites
- 1933US2011205802A1Nonvolatile memory device and method of reading the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →