Inventor · disambiguated record
Ching-Hung Kao
Also filed as: KAO CHING-HUNG
88 granted patents·33 pending applications·236 citations·filing 2004–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD58UNITED MICROELECTRONICS CORP40KAO CHING-HUNG22UNITED MICROELETRONICS CORP1
Top patents by PatentIndex Score
121 records- 0196US11784198B2Wide channel semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·2 cites·20 claims
- 0295US10566361B2Wide channel gate structure and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·8 cites·20 claims
- 0392US11342455B2Minimization of silicon germanium facets in planar metal oxide semiconductor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·4 cites·20 claims
- 0492US7498190B2Method for fabricating a CMOS image sensorUNITED MICROELECTRONICS CORP·Filed 2007·Granted Mar 3, 2009·17 cites·20 claims
- 0592US2025366089A1Circuit Structure and Method for Reducing Electronic NoisesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0691US9537040B2Complementary metal-oxide-semiconductor image sensor and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jan 3, 2017·7 cites·8 claims
- 0791US8779539B2Image sensor and method for fabricating the sameKAO CHING-HUNG·Filed 2011·Granted Jul 15, 2014·8 cites·7 claims
- 0891US7408211B2Transfer transistor of CMOS image sensorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Aug 5, 2008·16 cites·20 claims
- 0989US10658455B2Metal insulator metal capacitor structure having high capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·7 cites·20 claims
- 1089US8921901B1Stacked CMOS image sensor and signal processor wafer structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Dec 30, 2014·10 cites·11 claims
- 1188US8779344B2Image sensor including a deep trench isolation (DTI)that does not contact a connecting element physicallyKAO CHING-HUNG·Filed 2012·Granted Jul 15, 2014·5 cites·18 claims
- 1288US7517761B2Method for manufacturing semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Apr 14, 2009·21 cites·11 claims
- 1387US8334189B2Method for forming trenches and trench isolation on a substrateKAO CHING-HUNG·Filed 2011·Granted Dec 18, 2012·9 cites·14 claims
- 1486US8643101B2High voltage metal oxide semiconductor device having a multi-segment isolation structureKAO CHING-HUNG·Filed 2011·Granted Feb 4, 2014·11 cites·16 claims
- 1586US7741662B2Ultra high voltage MOS transistor deviceUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jun 22, 2010·11 cites·18 claims
- 1686US7531374B2CMOS image sensor process and structureUNITED MICROELECTRONICS CORP·Filed 2006·Granted May 12, 2009·7 cites·11 claims
- 1785US12362184B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1885US8383448B2Method of fabricating metal oxide semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2012·Granted Feb 26, 2013·3 cites·8 claims
- 1985US2025365991A1Metal insulator metal capacitor structure having high capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2084US12457816B2Wide channel semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 28, 2025·0 cites·20 claims
- 2184US2025323042A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2283US9997628B1Semiconductor device and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 12, 2018·4 cites·20 claims
- 2382US12464735B2Metal insulator metal capacitor structure having high capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 2482US10020265B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 10, 2018·2 cites·20 claims
- 2582US7868394B2Metal-oxide-semiconductor transistor and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jan 11, 2011·8 cites·16 claims
- 2681US12464787B2Circuit structure and method for reducing electronic noisesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 2780US12354959B2Redistribution layer featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 2880US11901305B2Method for fabricating semiconductor structure having alignment mark featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 2980US7378327B2Method for fabricating a junction varactor with high Q factorUNITED MICROELECTRONICS CORP·Filed 2007·Granted May 27, 2008·7 cites·8 claims
- 3079US2024387380A1Redistribution layer featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3178US7535063B2ESD protection device structureUNITED MICROELECTRONICS CORP·Filed 2005·Granted May 19, 2009·6 cites·9 claims
- 3277US10804211B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 13, 2020·1 cites·20 claims
- 3377US9093296B2LDMOS transistor having trench structures extending to a buried layerKAO CHING-HUNG·Filed 2012·Granted Jul 28, 2015·3 cites·8 claims
- 3476US9312292B2Back side illumination image sensor and manufacturing method thereofKAO CHING-HUNG·Filed 2011·Granted Apr 12, 2016·1 cites·8 claims
- 3576US2024387605A1Semiconductor structure and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3676US2024395743A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3775US7361955B2High-voltage MOS device with dummy diffusion regionUNITED MICROELECTRONICS CORP·Filed 2005·Granted Apr 22, 2008·6 cites·10 claims
- 3875US7169680B2Method for fabricating a metal-insulator-metal capacitorUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jan 30, 2007·7 cites·17 claims
- 3975US2024389314A1Flash memory layout to eliminate floating gate bridgeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4075US2024395876A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4175US2024387689A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4274US12020940B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·0 cites·20 claims
- 4374US10115758B2Isolation structure for reducing crosstalk between pixels and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 30, 2018·2 cites·20 claims
- 4474US2024363752A1Minimization of silicon germanium facets in planar metal oxide semiconductor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4573US12274054B2Flash memory layout to eliminate floating gate bridgeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 4673US12068364B2Metal insulator metal capacitor structure having high capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 4773US11362039B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
- 4873US7939867B2Complementary metal-oxide-semiconductor (CMOS) image sensor and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2008·Granted May 10, 2011·2 cites·9 claims
- 4973US7924504B2Color filter structure having inorganic layersUNITED MICROELECTRONICS CORP·Filed 2008·Granted Apr 12, 2011·6 cites·4 claims
- 5073US7510899B2Methods for fabricating a CMOS image sensorUNITED MICROELECTRONICS CORP·Filed 2007·Granted Mar 31, 2009·2 cites·5 claims
Showing the top 50 of 121 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →