Inventor · disambiguated record
Chung-Hu Ke
Also filed as: KE CHUNG-HU
27 granted patents·4 pending applications·352 citations·filing 2003–2013
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG22KO CHIH-HSIN6CHEN HUNG-WEI1KE CHUNG-HU1TAIWAN SEMICONDUCTOR MFG CO LTD1
Top patents by PatentIndex Score
31 records- 0197US7238564B2Method of forming a shallow trench isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 3, 2007·64 cites·10 claims
- 0294US7355262B2Diffusion topography engineering for high performance CMOS fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 8, 2008·34 cites·16 claims
- 0393US7466008B2BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 16, 2008·35 cites·20 claims
- 0493US7190036B2Transistor mobility improvement by adjusting stress in shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 13, 2007·68 cites·29 claims
- 0593US7176537B2High performance CMOS with metal-gate and Schottky source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 13, 2007·21 cites·15 claims
- 0688US7737532B2Hybrid Schottky source-drain CMOS for high mobility and low barrierTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 15, 2010·15 cites·20 claims
- 0788US7465620B2Transistor mobility improvement by adjusting stress in shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 16, 2008·13 cites·17 claims
- 0887US8426298B2CMOS devices with Schottky source and drain regionsKO CHIH-HSIN·Filed 2011·Granted Apr 23, 2013·7 cites·14 claims
- 0983US8030210B2Contact barrier structure and manufacturing methodsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Oct 4, 2011·6 cites·14 claims
- 1083US6949443B2High performance semiconductor devices fabricated with strain-induced processes and methods for making sameTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 27, 2005·27 cites·14 claims
- 1180US7394136B2High performance semiconductor devices fabricated with strain-induced processes and methods for making sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 1, 2008·7 cites·1 claims
- 1279US7745904B2Shallow trench isolation structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 29, 2010·7 cites·8 claims
- 1378US7709903B2Contact barrier structure and manufacturing methodsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 4, 2010·6 cites·18 claims
- 1478US7358571B2Isolation spacer for thin SOI devicesTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 15, 2008·17 cites·8 claims
- 1575US7569896B2Transistors with stressed channelsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 4, 2009·6 cites·14 claims
- 1675US7511348B2MOS transistors with selectively strained channelsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 31, 2009·6 cites·9 claims
- 1770US7875959B2Semiconductor structure having selective silicide-induced stress and a method of producing sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 25, 2011·4 cites·19 claims
- 1869US8039284B2Dual metal silicides for lowering contact resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 18, 2011·4 cites·6 claims
- 1962US7985652B2Metal stress memorization technologyTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jul 26, 2011·2 cites·14 claims
- 2059US8084305B2Isolation spacer for thin SOI devicesKO CHIH-HSIN·Filed 2008·Granted Dec 27, 2011·1 cites·15 claims
- 2158US8569837B2MOS devices having elevated source/drain regionsKO CHIH-HSIN·Filed 2007·Granted Oct 29, 2013·1 cites·18 claims
- 2253US9673105B2CMOS devices with Schottky source and drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 6, 2017·0 cites·20 claims
- 2353US7582934B2Isolation spacer for thin SOI devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Sep 1, 2009·0 cites·13 claims
- 2451US8154107B2Semiconductor device and a method of fabricating the deviceKE CHUNG-HU·Filed 2007·Granted Apr 10, 2012·1 cites·18 claims
- 2551US7803718B2BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Sep 28, 2010·0 cites·20 claims
- 2649US2008191285A1CMOS devices with schottky source and drain regionsKO CHIH-HSIN·Filed 2007·Application pending·0 cites
- 2747US7538398B2System and method for forming a semiconductor device source/drain contactTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 26, 2009·0 cites·14 claims
- 2846US2005224907A1Isolation structure with nitrogen-containing liner and methods of manufactureKO CHIH-HSIN·Filed 2005·Application pending·0 cites
- 2941US7098119B2Thermal anneal process for strained-Si devicesTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 29, 2006·0 cites·24 claims
- 3038US2006125121A1Capacitor-less 1T-DRAM cell with Schottky source and drainKO CHIH-HSIN·Filed 2005·Application pending·0 cites
- 3137US2006091490A1Self-aligned gated p-i-n diode for ultra-fast switchingCHEN HUNG-WEI·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →